Tyco PA66 GF30
Abstract: relay tyco pbt-gf30 pbt-gf20 relay AMP PBT gf30 connector PBT GF15 connector PA66 gf30 PA66 GF 25 relay komax kappa 220 manual topwin komax Tyco PBT-GF10
Text: RoHS Ready AMP MCP Interconnection System for the Automotive Industry T E AU TO M OT I V E T H E 5 A P P L I C AT I O N A R E A S I I N N OVAT I V E TECHNOLOGIES TE Automotive – a business segment of TE Connectivity – follows the globalization goals of our customers, speeds up the integration of new technologies and enables
|
Original
|
|
PDF
|
MKKDS
Abstract: No abstract text available
Text: Module no:1719031 LabelId:1719031 Operator:Phoenix 16:16:55, Donnerstag, 28. Juni 2001 MKKDS 5/… -6,35 and -9,5 Pitch 6.35 or 9.52 rigid IEC [mm ] solid 2 flexible stranded AWG I U [A] [V] MKKDS 5/…-6,35 0.2-6 0.2-4 24-10 32 500 0.2-6 0.2-4 24-10 32
|
Original
|
10-section
MKKDS
|
PDF
|
BCM 4335
Abstract: relay btk 1012 ADP 3208 bcm 3380 btk 1012 1664810000 97ATEX6007X DIN EN 60999-1 HD 11070 moduflex
Text: Company profile Weidmüller is the leading manufacturer of components for electrical and electronic interconnection technologies. The company develops, produces and sells customer-oriented solutions comprising the entire Weidmüller product portfolio. As an OEM supplier, the company sets global standards in the
|
Original
|
|
PDF
|
H17190
Abstract: H171901B H171901p dc motor speed control using 5801 microcontroller H 17190
Text: fC l H A R R IS S E M I C O N D U C T O R H / 7 7 9 24-Bit, High Precision, Sigma Delta A/D Converter March 1998 Features Description • 22-Bit Resolution with No Missing Code The Harris H 17190 is a monolithic instrumentation, sigma delta A/D converter which operates from ±5V supplies. Both the sig
|
OCR Scan
|
22-Bit
-120dB
60/50Hz
24-Bit,
HI7190
3550nm
H17190
H171901B
H171901p
dc motor speed control using 5801 microcontroller
H 17190
|
PDF
|
diode E1110
Abstract: lN4002 LN4003 ANA 618 20010 TDB 0123 km b3170 E1110 Diode UB8560D MAA723 moc 2030
Text: elektronik-bauelem ente I WT VD AVL 1 /8 7 Bl. 2 E r l ä u t e r u n g e n z u m I n h a l t und zu d e n A n g a b e n d e r B a u e l e m e n t e - V e r g l e i c h s l i s t e D ie B a u e l e m e n t e - V e r g l e i c h s l i s t e e n t h ä l t a l l e in d e r B i l a n z v e r a n t w o r t u n g d e s V E B K o m b i n a t
|
OCR Scan
|
|
PDF
|
TLRC200
Abstract: No abstract text available
Text: "H TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA DISCRETE/OPTO DEjlCHTESD DDITIIO 3 99D 17190 TLRC200 GaMAs RED LIGHT EMISSION - TENTATIVE FEATURES: I PIN CONNECTION 2 4 Ö 8 10 13 • ULTRA-BRIGHT ' O O O O $20 Large Size Lamp Consist of 6 chip » • Low Drive Current, High Intensity Red Light Emission'
|
OCR Scan
|
TLRC200
20mA/chip
Ta-25
TLRC200
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ÌH HARRIS H S E M I C O N D U C T O R 24-Bit High Precision Sigma Delta A/D Converter December 1995 Description Features • 17190 22-Bit Resolution with No Missing Code The Harris H17190 is a monolithic instrumentation sigma delta A/D converter which operates from ±5V supplies. Both the
|
OCR Scan
|
24-Bit
22-Bit
H17190
1-800-4-HARR
43G2271
GDb44Gb
|
PDF
|
Untitled
Abstract: No abstract text available
Text: .156" 3.96mm Center Header Breakaway High Friction Lock f Q0GCC3m HP17 Series D im ension ing All dim ensions in i n c h e s and millimetres. Values in b ra c k e ts are metric equivalents. Charts c on tain dimensions'm inches and miWmetfes. .045" [1.14mm] Square
|
OCR Scan
|
1538I
HP17020
HP17030
YP17040
HP17QS0
|
PDF
|
Untitled
Abstract: No abstract text available
Text: S G S - T H O M S O N A T /. M «glLilgm 5ÜIDIgi_A M 817 1 9 -0 3 0 RF & MICROWAVE TRANSISTORS TELEMETRY APPLICATIONS P R E L IM IN A R Y D A T A i REFRACTO RY/G O LD METALLIZATION • EM ITTER SITE BALLASTED . LOW THERMAL RESISTANCE . IN PU T/O U TPU T MATCHING
|
OCR Scan
|
AM81719-030
|
PDF
|
Tr431
Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Text: I RJ 1 international, rectifier IR R e p la c e m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200
|
OCR Scan
|
25T12
Z1012
Z1014
Z1018
AA138
AA140
AA142
AA200
AA21Q
AA300
Tr431
1N1525
cs1256hg
BSF17
dd04
18DB6A
B1274 transistor
1N34A MP
LT236
SN76
|
PDF
|
Untitled
Abstract: No abstract text available
Text: T e m ic Matra MHS_ UG SerfCS Universal Logic Circuits Description T h e U G series o f U L C ” s is w ell suited for conversion o f m edium - to large-sized C P L D s and F PG A s. D evices are im p lem en ted in high-perform ance C M O S
|
OCR Scan
|
000bfl3S
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 12 II 9 10 7 8 6 1 71719 3 1 2 3.210 2 .7 3 5 l .1 3 0 1 .0 0 5 2 P L C S M- -I .4 9 4 2 .7 8 5 .3 5 2 “T .2 0 5 .0 5 6 (10 P L C S ) ^ H f .196 _ i_ i OF PA RT - .0 6 5 <6 P L C S ) .1 00 (4 P L C S ) - .0 6 5 (4 P L C S ) 2 .8 3 5 .431 71719 2 .9 7 0 T Y P
|
OCR Scan
|
|
PDF
|
PD42S
Abstract: No abstract text available
Text: b427525 GQ4HSbT TEI « N E C E MOS INTEGRATED CIRCUIT jtiP D 4 2 S 1 6 1 9 0 L , 4 2 S 1 7 1 9 0 L , 4 2 S 1 8 1 9 0 L 16 M B IT D Y N A M IC RA M 3 .3 V FA ST P A G E M O D E & B Y T E W R IT E M O D E P R E LIM IN A R Y -D E S C R IP T IO N The NEC n PD42S16190L. ^ PD42S17190L and // PD42S18190L a re 1 048 576 words by 18 b i t s
|
OCR Scan
|
b427525
uPD42S16190L
uPD42S17190L
uPD42S18190L
b427525
0042bE
475mil)
P32VF-100-475A
P32VF-100-475A
PD42S
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BUS INTERFACE LATCHES FEATURES • Matched Rise and Fall times B Function, Pinout and Drive Compatible with the FCT, F and AM29841/843/845 Logic ■ Fully Compatible with TTL Input and Output Logic Levels
|
OCR Scan
|
P54/74FCT843AT/BT/CT-P54/74FCT845AT/BT/CT
AM29841/843/845
MIL-STD-883,
10-Bit
843AT
845AT
841BT
843BT
845BT
|
PDF
|
|
|
4N500
Abstract: IC 741 cn
Text: b427555 GG42530 Tfc.7 « N E C E / / MOS INTEGRATED CIR CU IT ju P D 4 2 S 1 6 1 9 0 , 4 2 S 1 7 1 9 0 , 4 2 S 1 8 1 9 0 16 M B IT D Y N A M IC RAM FA S T PA G E M O D E & B Y T E W R IT E M O DE - P R E LIM IN A R Y -D E S C R IP T IO N
|
OCR Scan
|
b427555
GG42530
uPD42S16190
uPD42S17190
uPD42S18190
475mil)
P32VF-100-475A
P32VF-100-475A
4N500
IC 741 cn
|
PDF
|
MSM5116180-70
Abstract: MSM5116180-80
Text: O K I Semiconductor MSM5116180 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5116180 is OKI's CMOS silicon gate process technology.
|
OCR Scan
|
MSM5116180_
576-Word
18-Bit
MSM5116180
cycles/64ms
MSM5116180-70
MSM5116180-80
|
PDF
|
32-PIN
Abstract: A10E MSM51V16900-70 MSM51V16900-80
Text: O K I Semiconductor MSM51V16900_ 2,097,152-Word x 9-Bit D Y N A M IC R A M : FAST PAG E M O D E TYPE DESCRIPTION The MSM51V16900 is a new generation Dynamic RAM organized as 2,097,152-word x 9-bit configuration. The technology used to fabricate the MSM51V16900 is OKI's CMOS silicon gate process technology.
|
OCR Scan
|
MSM51V16900_
152-Word
MSM51V16900
cycles/64ms
32PIN
SOJ32-P-4QO
42PIN
32-PIN
A10E
MSM51V16900-70
MSM51V16900-80
|
PDF
|
2454D
Abstract: 2DQ11 2M54G
Text: O K I Semiconductor MSM5117180 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5117180 is OKI's CMOS silicon gate process technology.
|
OCR Scan
|
MSM5117180
576-Word
18-Bit
MSM5117180
cycles/32ms
2454D
2DQ11
2M54G
|
PDF
|
081m
Abstract: No abstract text available
Text: O K I Semiconductor MSM51V17900_ 2,097,152-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17900 is a new generation Dynamic RAM organized as 2,097,152-word x 9-bit configuration. The technology used to fabricate the MSM51VI7900 is OKI's CMOS silicon gate process technology.
|
OCR Scan
|
MSM51V17900
152-Word
MSM51V17900
MSM51VI7900
cycles/32ms
32PIN
SOJ32-P-4QO
42PIN
081m
|
PDF
|
Untitled
Abstract: No abstract text available
Text: OKI Semiconductor MSM5116900 2,097,152-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116900 is a new generation Dynamic RAM organized as 2,097,152-word x 9-bit configuration. The technology used to fabricate the MSM5116900 is OKI's CMOS silicon gate process technology.
|
OCR Scan
|
MSM5116900
152-Word
MSM5116900
cycles/64ms
32PIN
SOJ32-P-4QO
42PIN
|
PDF
|
Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM51V16900_ 2,097,152-Word x 9-Bit D Y N A M IC R A M : FAST PAG E M O D E TYPE DESCRIPTION The MSM51V16900 is a new generation Dynamic RAM organized as 2,097,152-word x 9-bit configuration. The technology used to fabricate the MSM51V16900 is OKI's CMOS silicon gate process technology.
|
OCR Scan
|
MSM51V16900
152-Word
MSM51V16900
cycles/64ms
32PIN
SOJ32-P-4QO
42PIN
|
PDF
|
transistor W2W
Abstract: w2w transistor oki Package SOJ 32-PIN A204 MSM51V17900-70 MSM51V17900-80 uras 14
Text: O K I Semiconductor MSM51V17900 2,097,152-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17900 is a new generation Dynamic RAM organized as 2,097,152-word x 9-bit configuration. The technology used to fabricate the MSM51VI7900 is OKI's CMOS silicon gate process technology.
|
OCR Scan
|
MSM51V17900_
152-Word
MSM51V17900
MSM51VI7900
cycles/32ms
32PIN
SOJ32-P-4QO
42PIN
transistor W2W
w2w transistor
oki Package SOJ
32-PIN
A204
MSM51V17900-70
MSM51V17900-80
uras 14
|
PDF
|
A5 GNC
Abstract: TSOP32-P-4QO-K 51V17400 5116100
Text: O K I Semiconductor MSM51V16190 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V16190 is OKI's CMOS silicon gate process technology.
|
OCR Scan
|
MSM51V16190
576-Word
18-Bit
MSM51V16190
cycles/64m
A5 GNC
TSOP32-P-4QO-K
51V17400
5116100
|
PDF
|
uras 4
Abstract: uras 2 5116100
Text: OKI Semiconductor MSM5117190 1,048,576-Word x 18-Bit D Y N A M IC RA M : FAST P AG E M O D E TYPE DESCRIPTION The MSM5117190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5117190 is OKI's CMOS silicon gate process technology.
|
OCR Scan
|
MSM5117190
576-Word
18-Bit
MSM5117190
cycles/32m
uras 4
uras 2
5116100
|
PDF
|
