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    GUNN DIODE Search Results

    GUNN DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    GUNN DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    AN5205

    Abstract: Gunn Diode at power supply circuit gunn diode radar gunn diodes Gunn Diode gunn diode oscillator diode gunn gunn diode radar module radar gunn diode AN5205-2
    Text: AN5205 AC2001 - 77 GHz Gunn Oscillator Module Application Note AN5205-2.0 July 1999 Electric field breakdown of a Gunn diode is related to the 'nl' product of the device doping level multiplied by the active length . The Gunn diode used in the AC2001 is normally operated at about 5 to 7V, whereas voltage


    Original     		AN5205 AC2001 AN5205-2 AC2001 AN5205 Gunn Diode at power supply circuit gunn diode radar gunn diodes Gunn Diode gunn diode oscillator diode gunn gunn diode radar module radar gunn diode PDF

    GUNN DIODE

    Abstract: gunn diode oscillator radar gunn diode NJR4214 gunn diode radar module 10 GHz gunn diode Doppler Sensor K-band Gunn gunn diode radar NJR4211
    Text: K-band Doppler Module Gunn Diode Type MODEL NO. NJR4211 K-band Doppler Module (Gunn Diode Type & Phase Detection) MODEL NO. NJR4214 <Description> This specification describes microwave Doppler radar modules intended for the intrusion sensor system and the


    Original     		NJR4211 NJR4214 NJR4211 130mA NJR4214 200mA ---------------NJR4214 GUNN DIODE gunn diode oscillator radar gunn diode gunn diode radar module 10 GHz gunn diode Doppler Sensor K-band Gunn gunn diode radar PDF

    MA86859

    Abstract: diagram of gunn diode Gunn oscillator OUTPUT POWER OF A GUNN DIODE OSCILLATOR Gunn Transceiver gunn diode radar gunn diode package 2222 diode radar gunn diode
    Text: Gunn Oscillator Transceiver 24.125 GHz MA86859 V3.00 Features ● ● ● ● ● ● MIXER OUTPUT Low Operating Voltage Smaller Physical Size Smaller Antennas Required Rugged, Diecast Construction Good Sensitivity Directly Attachable to an Antenna GUNN BIAS


    Original     		MA86859 MA86859 UG-595/U diagram of gunn diode Gunn oscillator OUTPUT POWER OF A GUNN DIODE OSCILLATOR Gunn Transceiver gunn diode radar gunn diode package 2222 diode radar gunn diode PDF

    MA86849

    Abstract: diagram of gunn diode doppler radar circuit for speed sensing Gunn Diode symbol MA86849-MO1 radar gunn diode OUTPUT POWER OF A GUNN DIODE OSCILLATOR gunn diode oscillator 10 GHz gunn diode gunn diode radar
    Text: Gunn Oscillator Transceiver 24.125 GHz MA86849-MO1 V3.00 1.050 MAX. 26.67 Features ● ● ● ● ● ● ● GUNN BIAS GROUND TERMINAL Low Operating Voltage Small Physical Size Small Antennas Required Rugged, Diecast Construction Facilitates Mounting of Circuit Board


    Original     		MA86849-MO1 MA86849 WR-42, UG-595/U diagram of gunn diode doppler radar circuit for speed sensing Gunn Diode symbol MA86849-MO1 radar gunn diode OUTPUT POWER OF A GUNN DIODE OSCILLATOR gunn diode oscillator 10 GHz gunn diode gunn diode radar PDF

    gunn diodes

    Abstract: DC1279F-T Gunn Diode gunn diode datasheet 10 GHz gunn diode DC1200-T gunn diode marconi Marconi gunn DC1278F-T DC1279D
    Text: Millimetre Wave Graded Gap Gunn Diodes The DC1200-T series extends the range of high power, graded gap, GaAs CW Gunn diodes further into the millimetre wave frequency band. They offer superior stability where low df/dt, low df/dv and cold start turn-on are at a premium.


    Original     		DC1200-T DC1276F-T DC1276G-T DC1276H-T DC1276J-T DC1277D-T DC1277E-T DC1277F-T DC1277G-T gunn diodes DC1279F-T Gunn Diode gunn diode datasheet 10 GHz gunn diode gunn diode marconi Marconi gunn DC1278F-T DC1279D PDF

    Gunn Diode

    Abstract: FMCW Radar FMCW gunn diode radar module gunn diode datasheet easily tuned oscillator radar gunn diode FMCW circuit gunn diode radar FMCW Radar Module
    Text: Device No / Annotation Helvetica bold 12pt Bold XXXXXX AC2001 Millimeter Wave gunn Oscillator Module DS5074 1.1 january 1999 Mitel Semiconductor has developed a low cost, state of the art Millimetre Wave Gunn diode based oscillator module that operates in the 75 to 80 GHz band, with a 1


    Original     		AC2001 DS5074 Gunn Diode FMCW Radar FMCW gunn diode radar module gunn diode datasheet easily tuned oscillator radar gunn diode FMCW circuit gunn diode radar FMCW Radar Module PDF

    gunn diode datasheet

    Abstract: gunn diodes gunn diode marconi Marconi gunn Gunn Diode marcon DC1251F DC1251G DC1251H DC1251J
    Text: High Power Gunn Diodes Gallium Arsenide bulk effect devices for CW power generation in the range 4 to 40 GHz * Low cost * High reliability * Custom devices available Minimum Typical Typical operating operating Frequency output band power voltage current Outline


    Original     		DC1253F DC1253G DC1253H DC1283F DC1283G DC1283H DC1251F DC1251G DC1251H DC1251J gunn diode datasheet gunn diodes gunn diode marconi Marconi gunn Gunn Diode marcon DC1251F DC1251G DC1251H DC1251J PDF

    gunn diode datasheet

    Abstract: MARCONI DC1201C Gunn Diode DC1201A marcon DC1203B DC1201E gunn diode marconi DC1203A DC1203C
    Text: Low Power Gunn Diodes Gallium Arsenide bulk effect devices for CW power generation in the range 4 to 26 GHz * Low cost * Low operating current * Custom devices available Minimum Typical Typical operating Frequency output operating band power voltage current


    Original     		DC1203A DC1203B DC1203C DC1203D DC1203E DC1233A DC1233B DC1233C DC1233D DC1233E gunn diode datasheet MARCONI DC1201C Gunn Diode DC1201A marcon DC1203B DC1201E gunn diode marconi DC1203A DC1203C PDF

    Untitled

    Abstract: No abstract text available
    Text: MA49192-138 Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power10m Frequency Min. (Hz)40G Frequency Max. (Hz)60G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage4.0 I(Oper.) Typ.(A) Oper. Current300m Semiconductor MaterialGaAs Package StyleScrew Mounting StyleT


    Original     		MA49192-138 Power10m Current300m PDF

    gunn diode

    Abstract: No abstract text available
    Text: DGB6839D Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power100m Frequency Min. (Hz)12.4G Frequency Max. (Hz)18G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage8.0 I(Oper.) Typ.(A) Oper. Current500m Semiconductor MaterialGaAs Package StyleScrew Mounting StyleT


    Original     		DGB6839D Power100m Current500m gunn diode PDF

    Untitled

    Abstract: No abstract text available
    Text: ML4941 Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power200m Frequency Min. (Hz)27G Frequency Max. (Hz)32G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage6.5 I(Oper.) Typ.(A) Oper. Current1.6 Semiconductor MaterialGaAs Package StyleScrew Mounting StyleT


    Original     		ML4941 Power200m PDF

    Untitled

    Abstract: No abstract text available
    Text: DC1204E Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power30m Frequency Min. (Hz) Frequency Max. (Hz)5.0G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage15 I(Oper.) Typ.(A) Oper. Current130m Semiconductor MaterialGaAs Package StylePill-C Mounting StyleS


    Original     		DC1204E Power30m Voltage15 Current130m PDF

    diode b34

    Abstract: Gunn Diode gunn diodes NJX4410 x-band motion detector 4420H gunn effect b34 diode diode a4t gunn diode oscillator
    Text: NEW JAPAN RA D I O CO LTD MSE D • bSbTflAB 0 0 0 1 1 7 b b34 INJRC LOW POW ER GUNN DIODES " " p NJX40Q0 Series 0 7 - U ■ Description NJX4000 Series low power Gunn diodes except NJX4402, 4403, 4404 are designed for in X -b an d or K.-band and cw or pulsed mode osillators. These Gunn diodes utilizing the bulk negative resistance effect can be easily obtained microwave


    OCR Scan     		000117b NJX40Q0 NJX4000 NJX4402, diode b34 Gunn Diode gunn diodes NJX4410 x-band motion detector 4420H gunn effect b34 diode diode a4t gunn diode oscillator PDF

    Gunn Diode

    Abstract: gunn diode oscillator gunn diode generator Gunn Diode at power supply circuit two cavity resonator GaAs Gunn Diode 24 GaAs Gunn Diode impatt varactor diode for x band radar DIODE TH 5 N
    Text: A ffe Application Note Gunn Diode/Oscillator M514 Description The Gunn diode is a gallium arsenide GaAs device capable of converting direct current (dc) power into radio frequency (RF) power when inserted in an appropriate cavity. This RF power is the result o f a bulk negative resistance property


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    Untitled

    Abstract: No abstract text available
    Text: HUGHES/ MICROWAVE PRDTS 1 TE D m 41313303 OOOOaiO =1 Gunn Diodes _ T :07-i| _ Hughes 4720xH series of GaAs Gunn Diodes are available for operation at any specified frequency between 26.5 and 95 GHz. Power output levels range from 20 mW at 95 GHz to


    OCR Scan     		4720xH 035-inch 4720xH-04xx 100mW 150mW 250mW 350mW PDF

    Untitled

    Abstract: No abstract text available
    Text: P ^p jlG E C P L E S S E Y DS3420-1.2 DC1270/1220 Series MILLIMETRE WAVE GUNN DIODES STANDARD AND GRADED GAP The introduction of the DC1270/DC1220 Series extends the range of high power standard and graded-gap GaAs CW Gunn diodes further into the millimetre wave frequency


    OCR Scan     		DS3420-1 DC1270/1220 DC1270/DC1220 DC1279D DC1279F-T DC1276Tand DC1277 DC1278 DC1279 PDF

    Gunn Diode MA49156

    Abstract: gunn diodes MA49156 MA49148 MA49000 gunn diode x band radar x-band gunn diode MA49508 MA49152 Gunn Diode e band
    Text: an A M P company GaAs Gunn Diodes MA49000 V 2.00 Case Styles Features See appendix for complete dimensions • Low Noise Characteristics From 5 to 100 GHz • Catalog or Custom Tailored Diodes • Pulse or CW Operation Description The MA49000 series of Gallium Arsenide Gunn diodes is


    OCR Scan     		MA49000 MA49000 Gunn Diode MA49156 gunn diodes MA49156 MA49148 gunn diode x band radar x-band gunn diode MA49508 MA49152 Gunn Diode e band PDF

    gunn diodes

    Abstract: AH443 GUNN impatt DH385 AH365 DH378 AH152 AH802 GaAs p-i-n diodes
    Text: DIODES SELECTION GUIDE P R O D U C T S REF. D E S C R IP T IO N AH152 to AH 169 GaAs Abrupt tuning Varactors AH202 to AH240 GaAs Hyperabrupt tuning Varactors AH365 to AH380 GaAs Gunn Diodes 18-26GHz AH443 to AH497 GaAs Gunn Diodes (9-18GHZ) AH501 to AH539


    OCR Scan     		AH152 18-26GHz) 9-18GHZ) 10-16GHz) 94GHz AH202 AH240 AH365 AH380 gunn diodes AH443 GUNN impatt DH385 DH378 AH802 GaAs p-i-n diodes PDF

    gunn diode generator

    Abstract: No abstract text available
    Text: GEC P L E S S E Y CT3513-1.2 GUNN DIODES - INTRODUCTION INTRODUCTION 1.1. Basic Gunn Diode Action There are two energy levels A and B— also known as Valleys—with the following properties: The variation of current with field for a perfect two terminal gallium arsenide device is shown in simplified form in Fig.1.


    OCR Scan     		CT3513-1 gunn diode generator PDF

    gunn diodes

    Abstract: gunn 4411 gunn diode 10.5 ghz
    Text: NE W J A P A N R A D I O CO L T D MSE D • bSbTflAB 0 0 0 1 1 7 b b34 INJRC LOW POWER GUNN DIODES " " p NJX40Q0 Series 0 7 - U ■ Description NJX4000 Series low power Gunn diodes except NJX4402, 4403, 4404 are designed for in X -b an d or K.-band and cw


    OCR Scan     		NJX40Q0 NJX4000 NJX4402, CX4410, 4420U NJX4410, 4420U NJX4621 gunn diodes gunn 4411 gunn diode 10.5 ghz PDF

    ML4942

    Abstract: ML4953
    Text: M L 4000 SERIES HIGH FREQUENCY CW GUNN DIODES - 18 TO 100GHZ This series o f high frequency Gunn diodes features low noise both AM and FM , good efficiency and one-step conversion from dc to microwave energy using a single, low voltage power supply. These devices are ideally suited for use as param p pump sources and as transm itters


    OCR Scan     		100GHZ ML4942 ML4953 PDF

    CXY11C

    Abstract: gunn effect gunn diode 10.5 ghz CXY11a Gunn Diode CXY11B CXY11 10 GHz gunn diode Mullard CXY11B cxyiia
    Text: GUNN EFFECT DEVICES CXYIIA CXYIIB CXYMC T E N T A T IV E D A T A G allium a rsen id e bulk effect devices em ploying the Gunn effect to produce CW oscillatio n s at m icrow ave fre q u e n c ie s. Each device is encapsulated in a v a ra c to r type p ill package suitable for m ounting in v a rio u s types of cavity.


    OCR Scan     		IB8665Iwer CXY11B/10 12GHz CXY11A/8 CXY11A CXY11A/10 CXY11A/11 CXY11B/8 CXY11B CXY11C gunn effect gunn diode 10.5 ghz Gunn Diode CXY11 10 GHz gunn diode Mullard CXY11B cxyiia PDF

    MA49156

    Abstract: Gunn Diode MA49156 x-band gunn diode MA49508 Gunn Diode x band gunn diode Gunn Diode 72 GHz gunn diode x band radar gunn diodes klystron
    Text: MA49000 Series Gallium Arsenide Gunn Diodes Features • HIGH RELIABILITY AND PERFORMANCE SUITABLE FOR MILITARY APPLICATIONS ■ BROADBAND ■ LOW NOISE CHARACTERISTICS FROM 5 TO 100 GHz ■ EASILY INCORPORATED INTO WAVEGUIDE, COAXIAL, MICROSTRIP OR STRIPLINE TRANSMISSION


    OCR Scan     		MA49000 MA49139 MA49110 MA49156 Gunn Diode MA49156 x-band gunn diode MA49508 Gunn Diode x band gunn diode Gunn Diode 72 GHz gunn diode x band radar gunn diodes klystron PDF

    Untitled

    Abstract: No abstract text available
    Text: Gunn Diodes Features • ■ ■ ■ ■ ■ ■ Spot Frequency Choice of Package Styles Range of Microwave Power Outputs Specific Types for Low Cost Commercial Applications High Reliability Special Screening to Customer Requirements Available Description


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