POWER200M Search Results

Contextual Info: PGG205-83 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power200m Frequency Min. (Hz)8.0G Frequency Max. (Hz)12.4G Efficiency Min.4.0 V(Oper.) Nom.(V) Oper. Voltage90 I(Oper.) Typ.(A) Oper. Current Semiconductor MaterialSilicon Package StyleScrew

Contextual Info: ML4941 Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power200m Frequency Min. (Hz)27G Frequency Max. (Hz)32G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage6.5 I(Oper.) Typ.(A) Oper. Current1.6 Semiconductor MaterialGaAs Package StyleScrew Mounting StyleT

Contextual Info: VAO32EN22 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power200m Frequency Min. (Hz)6.0G Frequency Max. (Hz)8.0G Efficiency Min.5.5 V(Oper.) Nom.(V) Oper. Voltage110 I(Oper.) Typ.(A) Oper. Current33m Semiconductor MaterialSilicon Package StylePill-C

Contextual Info: MS856B Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power200m Frequency Min. (Hz)15G Frequency Max. (Hz)18G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage I(Oper.) Typ.(A) Oper. Current Semiconductor MaterialGaAs Package StylePill-C Mounting StyleS

Contextual Info: PGG205-82 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power200m Frequency Min. (Hz)8.0G Frequency Max. (Hz)12.4G Efficiency Min.4.0 V(Oper.) Nom.(V) Oper. Voltage90 I(Oper.) Typ.(A) Oper. Current Semiconductor MaterialSilicon Package StyleScrew

Contextual Info: VAO12EN21 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power200m Frequency Min. (Hz)8.0G Frequency Max. (Hz)12.4G Efficiency Min.5.5 V(Oper.) Nom.(V) Oper. Voltage80 I(Oper.) Typ.(A) Oper. Current45m Semiconductor MaterialSilicon Package StylePill-C

Contextual Info: DGB8532 Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power200m Frequency Min. (Hz)12.4G Frequency Max. (Hz)16G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage8.0 I(Oper.) Typ.(A) Oper. Current700m Semiconductor MaterialGaAs Package StyleScrew Mounting StyleT

Contextual Info: PGG202-83 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power200m Frequency Min. (Hz)6.0G Frequency Max. (Hz)8.0G Efficiency Min.4.0 V(Oper.) Nom.(V) Oper. Voltage110 I(Oper.) Typ.(A) Oper. Current Semiconductor MaterialSilicon Package StyleScrew

Contextual Info: VAO12EN22 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power200m Frequency Min. (Hz)8.0G Frequency Max. (Hz)12.4G Efficiency Min.5.5 V(Oper.) Nom.(V) Oper. Voltage80 I(Oper.) Typ.(A) Oper. Current45m Semiconductor MaterialSilicon Package StylePill-B

Contextual Info: GC5647A Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power200m Frequency Min. (Hz)4.0G Frequency Max. (Hz) Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage15 I(Oper.) Typ.(A) Oper. Current530m Semiconductor MaterialGaAs Package StylePill-C Mounting StyleS

Contextual Info: VSQ9119S2 Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power200m Frequency Min. (Hz) Frequency Max. (Hz)44GÂ Efficiency Min.10 V(Oper.) Nom.(V) Oper. Voltage11 I(Oper.) Typ.(A) Oper. Current200m Semiconductor MaterialInP Package StyleScrew Mounting StyleT

AX3120

Abstract: S3478
Contextual Info: 19-1390; RevO; 10/98 A M X IA 1 L o w - P r o f i l e , 3V, 1 2 0 ^ A , I r DA I n f r a r e d T r a n s c e i v e r The MAX3120 IrDA 1.2-com patible infrared transceiver is optim ized for battery-pow ered, space-constrained applications. It consumes only 120^A while supporting

Contextual Info: 19-1390; Rev 0; 10/98 >kl>JX I>kl L o w - P r o f i l e , 3V, 1 2 0 f j A , I rDA I n f r a r e d T r a n s c e i v e r Description The MAX3120 IrDA 1.2-com patible infrared transceiver is optim ized for battery-pow ered, space-constrained applications. It consumes only 120pA while supporting