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    CXY11C

    Abstract: gunn effect gunn diode 10.5 ghz CXY11a Gunn Diode CXY11B CXY11 10 GHz gunn diode Mullard CXY11B cxyiia
    Text: GUNN EFFECT DEVICES CXYIIA CXYIIB CXYMC T E N T A T IV E D A T A G allium a rsen id e bulk effect devices em ploying the Gunn effect to produce CW oscillatio n s at m icrow ave fre q u e n c ie s. Each device is encapsulated in a v a ra c to r type p ill package suitable for m ounting in v a rio u s types of cavity.


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    IB8665Iwer CXY11B/10 12GHz CXY11A/8 CXY11A CXY11A/10 CXY11A/11 CXY11B/8 CXY11B CXY11C gunn effect gunn diode 10.5 ghz Gunn Diode CXY11 10 GHz gunn diode Mullard CXY11B cxyiia PDF