GTO SWITCHING TEST ABB Search Results

GTO thyristor Curve properties

Abstract: ABB 5SGY 35L4502 ABB 5SGy GTO thyristor ABB snubber IGCT ABB GTO gate unit gto dc converter abb GTO thyristor driver igct abb diode DS1
Contextual Info: ABB Semiconductors AG Section 3 SECTION 3 DATA SHEET USER’S GUIDE BY ANTON SCHWEIZER S 3-1 ABB Semiconductors AG Section 3 DATA SHEET USER’S GUIDE 3.1 GTOs Introduction This section is a detailed guide to proper understanding of a GTO data sheet. Parameters and ratings will be defined, and illustrated by

reverse-conducting thyristor

Abstract: gto Gate Drive circuit IGCT thyristor IGCT mitsubishi Usha Rectifier Emitter Turn-Off thyristor eto thyristor GTO triac HEXFET Power MOSFET designer manual MOS-Controlled Thyristor
Contextual Info: I Power Electronic Devices 1 Power Electronics Kaushik Rajashekara, Sohail Anwar, Vrej Barkhordarian, Alex Q. Huang Overview • Diodes • Schottky Diodes • Thyristors • Power Bipolar Junction Transistors • MOSFETs • General Power Semiconductor Switch Requirements • Gate

GTO thyristor ABB

Abstract: reverse-conducting thyristor GTO ABB gto peak reverse voltage test abb GTO thyristor RC snubber dv/dt diode gto 5SGR 30L4502 gto switching test abb ABB GTO ABB thyristor 5
Contextual Info: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 4500 3000 24 1.90 0.70 2800 V A kA V mΩ V Reverse Conducting Gate turn-off Thyristor 5SGR 30L4502 Doc. No. 5SYA 1216-02 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses

schematic diagram igbt inverter welding machine

Abstract: wind energy simulink matlab wind SOLAR simulink matlab UNITROL 1000 rc helicopter circuit diagram abb acs800 bridge circuit diagram igct abb ABB Thyristor YST PROJECT REPORT ON 220 kv substation thyristor aeg
Contextual Info: ABB Review The corporate technical journal of the ABB Group www.abb.com/abbreview 3 / 2008 Pioneering spirits Power electronics revolution in high dc current IGBT: aA tiny chip with a huge impact page 19 measurement page 6 Team-mates: MultiMove functionality

GTO thyristor

Abstract: ABB GTO ABB thyristor 5 THYRISTOR GTO gto peak reverse voltage test abb GTO thyristor ABB
Contextual Info: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 4500 4000 25 1.20 0.65 2800 V A kA V Gate turn-off Thyristor 5SGF 40L4502 mΩ V Doc. No. 5SYA 1209-03 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode

ABB thyristor 5

Abstract: GTO ABB GTO thyristor ABB
Contextual Info: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 6000 3000 24 1.70 0.60 3800 V A kA V Gate turn-off Thyristor 5SGT 30J6004 mΩ V Doc. No. 5SYA 1212-04 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode

GTO thyristor ABB

Abstract: ABB thyristor 5 GTO ABB GTO thyristor gto switching test abb 5sgf30j4502
Contextual Info: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 4500 3000 24 1.80 0.70 3000 V A kA V Gate turn-off Thyristor 5SGF 30J4502 mΩ V PRELIMINARY Doc. No. 5SYA 1211-04 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode

ABB thyristor 5

Abstract: GTO thyristor ABB THYRISTOR GTO
Contextual Info: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 4500 4000 25 1.08 0.29 2800 V A kA V Gate turn-off Thyristor 5SGT 40L4502 mΩ V MARKETING INFORMATION Doc. No. 5SYA 1235-00 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses

vt 1202

Abstract: ABB thyristor 5 IP350K gto 5sga
Contextual Info: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 4500 3000 24 2.20 0.60 2800 V A kA V Gate turn-off Thyristor 5SGA 30J4502 mΩ V Doc. No. 5SYA 1202-03 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode

gto 5sga

Abstract: GTO thyristor ABB ABB thyristor ABB thyristor 5 gto Gate Drive circuit ABB 5SGA ABB 5SGA 20H2501
Contextual Info: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 2500 2000 16 1.66 0.57 1400 V A kA V Gate turn-off Thyristor 5SGA 20H2501 mΩ V Doc. No. 5SYA 1205-01 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode

5SGA40L4501

Abstract: ABB 5SGA 40L4501 ABB thyristor 5 GTO thyristor ABB
Contextual Info: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 4500 4000 25 2.10 0.58 2800 V A kA V Gate turn-off Thyristor 5SGA 40L4501 mΩ V Doc. No. 5SYA 1208-02 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode

ABB thyristor 5

Abstract: 5SGA20H4502
Contextual Info: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 4500 2000 13 1.80 0.85 2200 V A kA V Gate turn-off Thyristor 5SGA 20H4502 mΩ V Doc. No. 5SYA 1210-01 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode

ABB 5SGA

Abstract: ABB thyristor 5 GTO thyristor ABB
Contextual Info: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 4500 3000 25 1.90 0.53 2200 V A kA V Gate turn-off Thyristor 5SGA 30J4505 mΩ V Doc. No. 5SYA 1204-04 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode

1206-01

Abstract: 25H25 25H2501 ABB 5SGA ABB thyristor 5 GTO ABB GTO thyristor ABB
Contextual Info: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 2500 2500 16 1.66 0.57 1400 V A kA V Gate turn-off Thyristor 5SGA 25H2501 mΩ V Doc. No. 5SYA 1206-01 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode

GTO ABB 5SGA 2046

Abstract: IG 2200 19
Contextual Info: VDRM ITGQM ITSM VT0 rT VDclink = = = = = = 4500 3000 25x103 1.9 0.53 2200 V A A V mΩ V Asymmetric Gate turn-off Thyristor 5SGA 30J4505 Doc. No. 5SYA1204-04 Sept. 05 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode

GTO thyristor ABB

Abstract: ABB 5SGA ABB GTO ABB thyristor 5
Contextual Info: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 2500 1500 10 1.55 0.63 1400 V A kA V Gate turn-off Thyristor 5SGA 15F2502 mΩ V Doc. No. 5SYA 1214-01 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode

A125

Abstract: B125 C125 D125
Contextual Info: VDRM ITGQM ITSM VT0 rT VDclink = = = = = = 2500 1500 10x103 1.45 0.90 1400 V A A V mΩ V Asymmetric Gate turn-off Thyristor 5SGA 15F2502 Doc. No. 5SYA1214-02 Oct. 06 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode

Contextual Info: Key Parameters VDRM = 4500 ITGQM = 4000 ITSM = 25 VT0 = 1.20 rT = 0.65 VDClink = 2800 V A kA V Gate turn-off Thyristor 5SGF 40L4502 mΩ V Doc. No. 5SYA 1209-04 April 98 Features The 5SGF 40L4502 is a 91 mm buffered layer GTO with exceptionally low dynamic and static

30J4502

Abstract: capacitor abb 5sgf30j4502 GTO thyristor ABB
Contextual Info: Key Parameters VDRM = 4500 ITGQM = 3000 ITSM = 24 VT0 = 1.80 rT = 0.70 VDClink = 3000 V A kA V Gate turn-off Thyristor 5SGF 30J4502 mΩ V Doc. No. 5SYA 1211-04 April 98 Features The 5SGF 30J4502 is a 85 mm buffered layer GTO with exceptionally low dynamic and static

40L4502

Abstract: 123500
Contextual Info: Key Parameters VDRM = 4500 ITGQM = 4000 ITSM = 25 VT0 = 1.08 rT = 0.29 VDClink = 2800 V A kA V Gate turn-off Thyristor 5SGT 40L4502 Marketing Information mΩ V Doc. No. 5SYA 1235-00 Oct. 98 Features The 5SGT 40L4502 is an 91 mm buffered layer, Transparent Emitter non-shorted anode GTO

Contextual Info: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 2500 2500 16 1.66 0.57 1400 V A kA V mW V Gate turn-off Thyristor 5SGA 25H2501 Doc. No. 5SYA1206-01 Jun. 04 • Patented free-floating silicon technology · Low on-state and switching losses · Annular gate electrode

GTO Snubber Capacitor

Abstract: 30J60
Contextual Info: Key Parameters VDRM = 6000 ITGQM = 3000 ITSM = 24 VT0 = 1.70 rT = 0.60 VDClink = 3800 V A kA V Gate turn-off Thyristor 5SGT 30J6004 mΩ V Doc. No. 5SYA 1212-04 April 98 Features The 5SGT 30J6004 is an 85 mm buffered layer, Transparent Emitter non-shorted anode GTO

25H2501

Contextual Info: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 2500 2500 16 1.66 0.57 1400 V A kA V Gate turn-off Thyristor 5SGA 25H2501 mΩ V Doc. No. 5SYA1206-01 Dec. 04 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode

20H2501

Abstract: 5sga20h2501
Contextual Info: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 2500 2000 16 1.66 0.57 1400 V A kA V mW V Gate turn-off Thyristor 5SGA 20H2501 Doc. No. 5SYA1205-01 Jun. 04 • Patented free-floating silicon technology · Low on-state and switching losses · Annular gate electrode