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ABB Low Voltage Products and Systems 5SGA 40L4501 Thyristor: hockey-puck; 4.5kV; Ifmax: 1.57kA; 1kA; Igt: 4A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	5SGA 40L4501				1	1 $2955.29 10 $2492.54 100 $2492.54 1000 $2492.54 10000 $2492.54	Get Quote
Hitachi Energy 5SGA40L4501 GTO THYRISTOR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Richardson RFPD	5SGA40L4501				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote

40L4501 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
5SGA40L4501 Abstract: ABB 5SGA 40L4501 ABB thyristor 5 GTO thyristor ABB Text: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 4500 4000 25 2.10 0.58 2800 V A kA V Gate turn-off Thyristor 5SGA 40L4501 mΩ V Doc. No. 5SYA 1208-02 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode	Original	PDF	40L4501 CH-5600 5SGA40L4501 ABB 5SGA 40L4501 ABB thyristor 5 GTO thyristor ABB
Untitled Abstract: No abstract text available Text: Key Parameters VDRM = 4500 ITGQM = 4000 ITSM = 25 VT0 = 2.10 rT = 0.58 VDClink = 2800 V A kA V Gate turn-off Thyristor 5SGA 40L4501 mΩ V Doc. No. 5SYA 1208-02 April 98 Features • Patented free-floating silicon technology • Low on-state and switching losses	Original	PDF	40L4501 CH-5600
press pack thyristor 10000 VDRM Abstract: LS 7313 S 5SGA40L4501 LS 7313 - S Text: VDRM ITGQM ITSM VT0 rT VDclink = = = = = = 4500 4000 25x103 2.1 0.58 2800 V A A V mΩ V Asymmetric Gate turn-off Thyristor 5SGA 40L4501 Doc. No. 5SYA1208-02 March 05 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode	Original	PDF	40L4501 5SYA1208-02 CH-5600 press pack thyristor 10000 VDRM LS 7313 S 5SGA40L4501 LS 7313 - S
Untitled Abstract: No abstract text available Text: VDRM ITGQM ITSM VT0 rT VDclink = = = = = = 4500 4000 25x103 2.1 0.58 2800 V A A V mΩ Ω V Asymmetric Gate turn-off Thyristor 5SGA 40L4501 Doc. No. 5SYA1208-02 Apr. 03 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode	Original	PDF	40L4501 5SYA1208-02 CH-5600
5SDF01R2501 Abstract: 5SGA 5SGA30J2501 RTK 031 Text: A S Y M M E T R I C _ G T Q T H Y R I S T O R S - ± X 0 GTO - Patentierter freier Druckkontakt. - Alle GTOs werden unter Ausschalt grenzwerten getestet. - Ausgezeichnete O ptimierung zwiscl Durchlass- und Schaltverlusten. - Spezifizierte Höhenstrahlungsfes	OCR Scan	PDF	01R2501 05D2501 05D2501 15F2502 20H2501 25H2501 30J2501 20H4502 11F2501 03D4501 5SDF01R2501 5SGA 5SGA30J2501 RTK 031
ABB 5SGA Abstract: 2sh25 GTO ABB GTO gate drive unit 2SH2501 TJM 10 5sga 20h2501 ABB GTO R2501 5SGA 15F2502 Text: Asymmetrie GTO Thyristors ABB Semiconductors AG I Patented free-floating silicon technology. — All G TOs are turn-off tested under maxim um ratings. — Excellent trade-off between on-state and switching losses. T yp e and ordering num ber V DRM V DC V RRM •tGQM at C s	OCR Scan	PDF	15F2502 15F2502 05D2501 01R2501 20H2501 05D2501 11F2501 25H2501 ABB 5SGA 2sh25 GTO ABB GTO gate drive unit 2SH2501 TJM 10 5sga 20h2501 ABB GTO R2501 5SGA 15F2502