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GTO thyristor ABB Abstract: reverse-conducting thyristor GTO ABB gto peak reverse voltage test abb GTO thyristor RC snubber dv/dt diode gto 5SGR 30L4502 gto switching test abb ABB GTO ABB thyristor 5 Text: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 4500 3000 24 1.90 0.70 2800 V A kA V mΩ V Reverse Conducting Gate turn-off Thyristor 5SGR 30L4502 Doc. No. 5SYA 1216-02 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses	Original	30L4502 30L4502 CH-5600 GTO thyristor ABB reverse-conducting thyristor GTO ABB gto peak reverse voltage test abb GTO thyristor RC snubber dv/dt diode gto 5SGR 30L4502 gto switching test abb ABB GTO ABB thyristor 5	PDF
SG600EX21 Abstract: SG600R21 FG2000DV-90 FG2000DV90 westcode cross reference SG1000R23 SG1000EX23 FG1000AH SG700EX22 DG406BP18 Text: Gate Turn-off Thyristor Cross Reference DS5549 Gate Turn-off Thyristor Cross Reference DS5549-1.1 May 2002 ABB - DYNEX ITQRM µF Cs µ ABB Part Number Voltage Maximum CSG 1501-25A01 2500 1500 3 Dynex Nearest Equivalent Part Number DG406BP25 CSG 2001-25A01	Original	DS5549 DS5549-1 1501-25A01 DG406BP25 2001-25A01 DG646BH25 2003-45A01 DG648BH45 2501-25A01 SG600EX21 SG600R21 FG2000DV-90 FG2000DV90 westcode cross reference SG1000R23 SG1000EX23 FG1000AH SG700EX22 DG406BP18	PDF
Gate Turn-off Thyristor Abstract: SG1000R23 westcode cross reference SG1000EX23 SG600EX21 SG700ex22 SG800EX21 equivalent FG2000DV90 fg2000dv-90da DG406BP18 Text: Gate Turn-off Thyristor Cross Reference Gate Turn-off Thyristor Cross Reference DS5549-2.0 September 2003 ABB - DYNEX ITQRM µF Cs µ ABB Part Number Voltage Maximum CSG 1501-25A01 2500 1500 3 Dynex Nearest Equivalent Part Number DG406BP25 CSG 2001-25A01	Original	DS5549-2 1501-25A01 DG406BP25 2001-25A01 DG646BH25 2003-45A01 DG648BH45 2501-25A01 3001-25A01 Gate Turn-off Thyristor SG1000R23 westcode cross reference SG1000EX23 SG600EX21 SG700ex22 SG800EX21 equivalent FG2000DV90 fg2000dv-90da DG406BP18	PDF
ABB EA 200 Abstract: reverse-conducting thyristor 5SGR30L4502 12.000 7J abb S count GTO 5SGR Text: Key Parameters Vdrm = 4500 V Itgqm = 3000 A Itsm = II o1 > ^DClink 5SGR 30L4502 24 kA 1.9 V = 0.7 m i 2800 V rT Reverse Conducting Gate turn-off Thyristor Doc. No. 5SYA 1216-02 Feb.97 Features The 5SGR 30L4502 is a 91 mm buffered layer, reverse-conducting GTO offering low lGT as	OCR Scan	30L4502 30L4502 CH-5600 ABB EA 200 reverse-conducting thyristor 5SGR30L4502 12.000 7J abb S count GTO 5SGR	PDF
5SDF01R2501 Abstract: 5SGA 5SGA30J2501 RTK 031 Text: A S Y M M E T R I C _ G T Q T H Y R I S T O R S - ± X 0 GTO - Patentierter freier Druckkontakt. - Alle GTOs werden unter Ausschalt grenzwerten getestet. - Ausgezeichnete O ptimierung zwiscl Durchlass- und Schaltverlusten. - Spezifizierte Höhenstrahlungsfes	OCR Scan	01R2501 05D2501 05D2501 15F2502 20H2501 25H2501 30J2501 20H4502 11F2501 03D4501 5SDF01R2501 5SGA 5SGA30J2501 RTK 031	PDF
05D2500 Abstract: GTO ABB GTO gate drive unit ABB GTO gate unit ABB GTO 30L2501 25H2501 05D250 5SDF GTO 6.5 KV Text: Asymmetrie GTO Thyristors ABB Semiconductors AG I - P atentierter freier Druckkontakt. - Alle G TO s werden unter A usschalt G renzw erten getestet. - Ausgezeichnete O ptim ierung zw ischen Durchlass- und Schaltverlusten. - G arantierte R ückw ärts-AvalancheBelastbarkeit.	OCR Scan	15F2502 5D25DQ 01R2501 01R2501 20H2501 05D2500 11F2500 01R25D1 25H25C1 GTO ABB GTO gate drive unit ABB GTO gate unit ABB GTO 30L2501 25H2501 05D250 5SDF GTO 6.5 KV	PDF