GSC-0355-R
Abstract: No abstract text available
Text: Control No. : GSC-0355-R Established on May 27, 2011 Product Information 1. 2150MHz Band 90deg Chip Hybrid Coupler 1.1 TYPE No. : GSC355-HYB2150 RoHS correspondence article 2. Appearance and Construction 2.1 Dimension Unit: mm 5.0 0.4 0.4 2 1 1.5 2 1.5 1
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GSC-0355-R
2150MHz
90deg
GSC355-HYB2150
GSC355
25degC)
35degC
2100e
125deg
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GSC355
Abstract: GSC-0355-R GSC355-HYB2150 Hybrid Coupler
Text: Control No. : GSC-0355-R Established on May 27, 2011 Product Information 1. 2150MHz Band 90deg Chip Hybrid Coupler 1.1 TYPE No. : GSC355-HYB2150 RoHS correspondence article 2. Appearance and Construction 2.1 Dimension Unit: mm 5.0 0.4 0.4 2 1 1.5 2 1.5 1
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GSC-0355-R
2150MHz
90deg
GSC355-HYB2150
GSC355
25degC)
35degC
2100le
125deg
Hybrid Coupler
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MD7IC2251N Rev. 0, 5/2012 RF LDMOS Wideband Integrated Power Amplifiers The MD7IC2251N wideband integrated circuit is designed with on-chip matching that makes it usable from 2110 - 2170 MHz. This multi - stage
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MD7IC2251N
MD7IC2251N
MD7IC2251NR1
MD7IC2251GNR1
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Untitled
Abstract: No abstract text available
Text: EGN21C105I2D High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 50.3dBm typ. @ Psat -High Efficiency: 70%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater consistency
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EGN21C105I2D
14GHz
14GHz
25deg
/-10MHz
45dBm
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ATC600F4R7BT250XT
Abstract: ATC600F390JT250XT
Text: Freescale Semiconductor Technical Data Document Number: MD7IC2251N Rev. 0, 5/2012 RF LDMOS Wideband Integrated Power Amplifiers The MD7IC2251N wideband integrated circuit is designed with on-chip matching that makes it usable from 2110 - 2170 MHz. This multi - stage
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MD7IC2251N
MD7IC2251NR1
MD7IC2251GNR1
ATC600F4R7BT250XT
ATC600F390JT250XT
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B4846
Abstract: S21 Package GRM188B11H102KA01D CS3376C
Text: EGN21C105I2D GaN-HEMT 105W High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 50.3dBm typ. @ Psat -High Efficiency: 70%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater
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14GHz
EGN21C105I2D
/-10MHz
45dBm
/-10MHz
B4846
S21 Package
GRM188B11H102KA01D
CS3376C
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Untitled
Abstract: No abstract text available
Text: EGN21C160I2D GaN-HEMT 160W High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 52.5dBm typ. @ Psat High Efficiency: 68%(typ.) @ Psat Power Gain : 18dB(typ.) @ f=2.14GHz Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater
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EGN21C160I2D
14GHz
25deg
/-10MHz
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EKZE101
Abstract: No abstract text available
Text: EGN21C210I2D GaN-HEMT 210W High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 53.0dBm typ. @ Psat -High Efficiency: 68%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater
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14GHz
EGN21C210I2D
/-10MHz
48dBm
/-10MHz
EKZE101
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EKZE101
Abstract: GaN amplifier 100W GRM55ER72A475K grm188b11h102ka01d 105w ATC100B Soshin JESD22-A114 MCR18 TZY2Z010A001
Text: EGN21C105I2D GaN-HEMT 105W High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 50.3dBm typ. @ Psat -High Efficiency: 70%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater
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EGN21C105I2D
14GHz
14GHz
/-10MHz
45dBm
EKZE101
GaN amplifier 100W
GRM55ER72A475K
grm188b11h102ka01d
105w
ATC100B
Soshin
JESD22-A114
MCR18
TZY2Z010A001
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Untitled
Abstract: No abstract text available
Text: EGN21C210I2D High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 53.0dBm typ. @ Psat -High Efficiency: 68%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater
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EGN21C210I2D
14GHz
14GHz
25deg
/-10MHz
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mar 827
Abstract: 210w AF Power Amplifier CS3376C ATC100B JESD22-A114 TZY2Z010A001 MURATA GRM55ER72A475K
Text: EGN21C210I2D GaN-HEMT 210W High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 53.0dBm typ. @ Psat -High Efficiency: 68%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater
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EGN21C210I2D
14GHz
14GHz
/-10MHz
mar 827
210w AF Power Amplifier
CS3376C
ATC100B
JESD22-A114
TZY2Z010A001
MURATA GRM55ER72A475K
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GSC311-20M1900
Abstract: GSC38 BM 72 A
Text: 90° HYBRID COUPLER • CHIP BALUN SOSHIN CHIP COUPLER & BALUN 1 9 0 ° /W u 'J ' S •imxm&• ' t ' J z f ' j "J :/' j I o i £ i f A i l & • fficAm plitude level b a la n c e T 'T 0 2 ) / \'7 > : P u s h - p u ll A M P tf> '& ie /-& J ? !c ffl t b T ' J ' I T ' A - f / \ ° 7 - M f i t ' t o
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OCR Scan
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SC301
302-20M
303-30M
310-10M
11-20M
12-30M
320-10M
321-20M
22-30M
GSC311-20M1900
GSC311-20M1900
GSC38
BM 72 A
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