EGN21C160I2D Search Results
EGN21C160I2D Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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2.2GHz
Abstract: EGN21C160I2D GaN amplifier
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EGN21C160I2D 14GHz 600mA 135GHz, 145GHz, 2.2GHz EGN21C160I2D GaN amplifier | |
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Contextual Info: EGN21C160I2D GaN-HEMT 160W High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 52.5dBm typ. @ Psat High Efficiency: 68%(typ.) @ Psat Power Gain : 18dB(typ.) @ f=2.14GHz Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater |
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EGN21C160I2D 14GHz 25deg /-10MHz | |
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Contextual Info: EGN21C160I2D GaN-HEMT 160W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 52.5dBm typ. @ Psat ・High Efficiency: 68%(typ.) @ Psat ・Power Gain : 18dB(typ.) @ f=2.14GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater |
Original |
EGN21C160I2D 14GHz 600mA 135GHz, 145GHz, |