2.2GHZ Search Results

J406

Abstract: J248 J425 ultrarf UPF2245 J242
Contextual Info: URFDB Sec 14_2245 11/3/99 11:23 AM Page 14-1 UPF2245 45W, 2.2GHz, 26.5V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Description This device is designed for base station applications operating at or near 2.2GHz. Rated with a minimum output power of 45W, it is ideal for CDMA, TDMA,

Contextual Info: Preliminary SPB-2026Z Product Description 1.7-2.2GHz 2W InGaP Amplifier Sirenza Microdevices’ SPB-2026Z is a high linearity single-stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a surface-mountable plastic encapsulated package. This HBT amplifier is

Contextual Info: Preliminary SPB-2026Z Product Description 1.7-2.2GHz 2W InGaP Amplifier Sirenza Microdevices’ SPB-2026Z is a high linearity single-stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a surface-mountable plastic encapsulated package. This HBT amplifier is

Guide for Common Mode Filter Design Coilcraft

Abstract: 0603CS LTC2208 LTC6400 LTC6401 LTC6401-20 LTC6401CUD-8 LTC6401IUD-8 g1318 LT 735
Contextual Info: LTC6401-8 2.2GHz Low Noise, Low Distortion Differential ADC Driver for DC-140MHz FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION 2.2GHz –3dB Bandwidth Fixed Gain of 2.5V/V 8dB –92dBc IMD3 at 70MHz (Equivalent OIP3 = 50dBm)

Contextual Info: T O SH IB A TENTATIVE TD7623FN TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Tn7fi?iFM • i r a ■ ■V 3-WIRE AND |2C BUS SYSTEM, 2.2GHz DIRECT TWO MODULUS-TYPE FREQUENCY SYNTHESIZER FOR CATV The TD7623FN can be combined with a micro CPU to

GRH111

Abstract: GRH111-0 GRH111-27 MGFS52BN2122A GRH111-1
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> SVIOFS52BM2122Â 2.1 - 2.2 GHz BAND 160W GaAs FET D E S C R IP TIO N The MGFS52BN2122A is a 160W push-pull type GaAs Power FET especially designed for use in 2.1 - 2.2GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees

Contextual Info: JXWBHX-T-1900-2200-20-50 1.9-2.2GHz Coaxial Circulator Test report is for reference only. TEST REPORT For JXWBHX-T-1900-2200-20-50 American Accurate Components, Inc. 1 188 Technology Drive, Unit H, Irvine, CA 92618 Tel: 949-453-9888 Š Fax: 949-453-8889 Š Email: sales@aacix.com

SPB2026Z

Abstract: SPB-2026Z TL 188 TRANSISTOR PIN DIAGRAM SPB-2026
Contextual Info: Advanced Information SPB-2026Z Product Description 1.7-2.2GHz 2W InGaP Amplifier Sirenza Microdevices’ SPB-2026Z is a high linearity single-stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a surface-mountable plastic encapsulated package. This HBT amplifier is

Contextual Info: Value 6U CompactPCI Intel® Core 2 Duo Processor Blade with Dual Independent Displays cPCI-6965 Series Features KB/MS DVI-I 6U cPCI Blades LPT DVI-D LAN COM USB PMC COM cPCI-6965 Low power Intel® Core™2 Duo 2.2GHz Dual Channel DDR2-667 SODIMM, up to 4GB

spa1526

Contextual Info: SPA1526Z SPA1526Z 0.7GHz to 2.2GHz 2W InGaP HBT Amplifier 0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER Package: SOF-26 NOT FOR NEW DESIGNS Product Description Features RFMD’s SPA1526Z is a high linearity single-stage class A Heterojunction Bipolar Transistor HBT power amplifier. The SPA1526Z is made with InGaP-on-GaAs

RFG1M20180

Abstract: ATC800B820JT
Contextual Info: RFG1M20180 RFG1M20180 1.8GHZ to 2.2GHZ 180W GaN 1.8GHZ TO 2.2GHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features      Advance GaN HEMT Technology Typical Peak Modulated Power > 180W Advanced Heat-Sink Technology Single Circuit for 1.8GHz to

RFG1M20180SB

Abstract: j35 fet RFG1M20180SQ
Contextual Info: RFG1M20180 RFG1M20180 1.8GHZ to 2.2GHZ 180W GaN 1.8GHZ TO 2.2GHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features      Advance GaN HEMT Technology Typical Peak Modulated Power > 180W Advanced Heat-Sink Technology Single Circuit for 1.8GHz to

Contextual Info: RFG1M20180 RFG1M20180 1.8 GHZ to 2.2GHZ 180W GaN 1.8GHZ TO 2.2GHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features      Advance GaN HEMT technology Typical peak modulated power>180W Advanced heat-sink technology Single circuit for 1.8GHz to

MAX108CHC

Abstract: MAX104 MAX106 MAX108 2 way rf splitter circuit diagram transistor P32
Contextual Info: 19-1492; Rev 1; 10/01 KIT ATION EVALU E L B AVAILA ±5V, 1.5Gsps, 8-Bit ADC with On-Chip 2.2GHz Track/Hold Amplifier The analog input is designed for either differential or single-ended use with a ±250mV input voltage range. Dual, differential, positive-referenced emitter-coupled

Contextual Info: RFG1M20180 RFG1M20180 180W GaN Power Amplifier 1.8GHz to 2.2GHz The RFG1M20180 is optimized for commercial infrastructure applications in the 1.8GHz to 2.2GHz frequency band, ideal for WCDMA and LTE applications. Using an advanced 48V high power density gallium nitride GaN semiconductor process optimized for high

Contextual Info: SGNE045MK High Voltage - High Power GaN-HEMT FEATURES - High Voltage Operation : VDS=50V - High Power : 47.5dBm typ. @ Psat - High Efficiency: 55%(typ.) @ Psat - Linear Gain : 16.0dB(typ.) @ f=2.2GHz - Proven Reliability DESCRIPTION SEDI’s GaN-HEMT offers high efficiency, ease of matching, greater

cph6006

Abstract: ITR07141 ITR07142 ITR07143 ITR07144 ITR07145 ITR07146 2146A
Contextual Info: Ordering number : ENN7690 CPH6006 NPN Epitaxial Planar Silicon Transistor CPH6006 Video Output Driver, High-Frequency Amplifier Applications Features • • Package Dimensions High fT fT=2.2GHz typ . Large current (IC=300mA). Adoption of FBET process. unit : mm

egnb045mk

Abstract: JESD22-A114
Contextual Info: EGNB045MK High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 47.5dBm typ. @ P3dB ・High Efficiency: 60%(typ.) @ P3dB ・Linear Gain : 13dB(typ.) @ f=2.2GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater

SY100EL35

Abstract: SY100EL35ZC SY100EL35ZCTR SY10EL35 SY10EL35ZC SY10EL35ZCTR
Contextual Info: SY10EL35 SY100EL35 FINAL JK FLIP-FLOP FEATURES • ■ ■ ■ ■ DESCRIPTION 525ps propagation delay 2.2GHz toggle frequency High bandwidth output transistions Internal 75KΩ input pull-down resistors Available in 8-pin SOIC package The SY10/100EL35 are high-speed JK Flip-Flops. The

2SC4504

Abstract: ITR07141 ITR07142 ITR07143 ITR07144 ITR07145 cm 2038A
Contextual Info: Ordering number:ENN3160A NPN Epitaxial Planar Silicon Transistor 2SC4504 High-Definition CRT Display Video Output Driver Applications Features Package Dimensions • High fT fT=2.2GHz typ · Large current (IC=300mA) · Adoption of FBET process. unit:mm 2038A

Contextual Info: SPECIFICATIONS RF Coaxial Connector Mechanical Contact Captivation Force: N/A Durability: 500Cycles F WITH SHIELDING FOR RF CONN Electrical Impedance: 75Ω Nominal Frequence Range: 900MHz~2.2GHz Centre Contact Resistance: 5mΩ Outer Contact Resistance: 2.5mΩ

XC1900E-03

Abstract: xinger 1900e hybrid coupler 3dB 180 ALM1222 ALM-1222 ALM-1322 RO4350
Contextual Info: ALM-1222 Very Low NF, High Gain and Adjustable High Linearity Balanced Amplifier Module for 1.8GHz to 2.2GHz Applications Application Note 5266 Introduction • Lower total cost – the integrated DC biasing circuit for temperature stability reduces the bill of material

frankfurt oder

Abstract: 617db-1018 Megaxess TFB2208 frankfurt TFB2208T
Contextual Info: Preliminary Technical Data TFB2208T M EMegaxess G AGmbH X Deutschland ESS Edition 09/00 2.2GHz RF Broad Band Amplifier Short Description Features • Single ended input 50Ω The bipolar integrated circuit TFB2208T is a RF broad band amplifier for several

PE9501

Abstract: PE9601 Q3236 9601-11
Contextual Info: Product Specification PE9601 2.2GHz Integer-N PLL for Rad Hard Applications Description Peregrine’s PE9601 is a high performance integer-N PLL capable of frequency synthesis up to 2.2 GHz. The device is designed for superior phase noise performance while providing