MGFS52BN2122A Search Results

MGFS52BN2122A Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MGFS52BN2122A		Mitsubishi	2.1-2.2 GHz BAND 160W GaAs FET		Original	PDF
MGFS52BN2122A		Mitsubishi	2.1 - 2.2 GHz Band 160 W GaAs FET		Scan	PDF

MGFS52BN2122A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
GRH111 Abstract: GRH111-0 GRH111-27 MGFS52BN2122A GRH111-1 Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> SVIOFS52BM2122Â 2.1 - 2.2 GHz BAND 160W GaAs FET D E S C R IP TIO N The MGFS52BN2122A is a 160W push-pull type GaAs Power FET especially designed for use in 2.1 - 2.2GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees	OCR Scan	MGFS52BN2122Ã MGFS52BN2122A 17GHz GF-49 14GHz GR708â GR40-1000 GRH111 GRH111-0 GRH111-27 GRH111-1	PDF
MGFS52BN2122A Contextual Info: June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS52BN2122A 2.1 - 2.2GHz BAND 160W GaAs FET Requests Regarding Safety Designs Mitsubishi Electric constantly strives to raise the level of its quality and reliability. Despite these concerted efforts, however, there will be occasions when our semiconductor products suffer breakdowns, malfunctions or other	Original	June/2004 MGFS52BN2122A MGFS52BN2122A	PDF
Contextual Info: < L/S band internally matched power GaAs FET > MGFS52BN2122A 2.1 – 2.2 GHz BAND / 160W DESCRIPTION The MGFS52BN2122A is a 160W push-pull type GaAs power FET especially designed for use in 2.1 – 2.2GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees	Original	MGFS52BN2122A MGFS52BN2122A 17GHz	PDF
mitsubishi 4a fet Contextual Info: < L/S band internally matched power GaAs FET > MGFS52BN2122A 2.1 – 2.2 GHz BAND / 160W DESCRIPTION The MGFS52BN2122A is a 160W push-pull type GaAs power FET especially designed for use in 2.1 – 2.2GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees	Original	MGFS52BN2122A MGFS52BN2122A 17GHz mitsubishi 4a fet	PDF