Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    GS880F32B Search Results

    GS880F32B Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    GS880F32B GIGA 9Mb Burst SRAMs Original PDF
    GS880F32BT-5.5 GIGA 5.5ns 256K x 32 9Mb sync burst SRAM Original PDF
    GS880F32BT-5.5I GIGA 5.5ns 256K x 32 9Mb sync burst SRAM Original PDF
    GS880F32BT-6 GIGA 6ns 256K x 32 9Mb sync burst SRAM Original PDF
    GS880F32BT-6.5 GIGA 6.5ns 256K x 32 9Mb sync burst SRAM Original PDF
    GS880F32BT-6.5I GIGA 6.5ns 256K x 32 9Mb sync burst SRAM Original PDF
    GS880F32BT-6I GIGA 6ns 256K x 32 9Mb sync burst SRAM Original PDF
    GS880F32BT-7 GIGA 7ns 256K x 32 9Mb sync burst SRAM Original PDF
    GS880F32BT-7.5 GIGA 7.5ns 256K x 32 9Mb sync burst SRAM Original PDF
    GS880F32BT-7.5I GIGA 7.5ns 256K x 32 9Mb sync burst SRAM Original PDF
    GS880F32BT-7I GIGA 7ns 256K x 32 9Mb sync burst SRAM Original PDF
    GS880F32BT-8.5 GIGA 8.5ns 256K x 32 9Mb sync burst SRAM Original PDF
    GS880F32BT-8.5I GIGA 8.5ns 256K x 32 9Mb sync burst SRAM Original PDF

    GS880F32B Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    UPD44164185F5-E60-EQ1

    Abstract: UPD44165362F5-E60-EQ1 UPD444016LG5-A12-7JF UPD4482161GF-A85 UPD44325094F5-E33-EQ2 uPD431232ALGF-A10 uPD431232ALGF-A12 uPD431232ALGF-A7 uPD431232ALGF-A8 uPD431532LGF-A10
    Text: NEC * - Tie down extra four I/Os with resistor uPD4382321GF-A85 GS880F32BT-7.5 + - Tie down extra two I/Os with resistor uPD4382321GF-A90 GS880F32BT-7.5 uPD4382322GF-A67 GS88032BT-200 UPD4311231LGF-A7 GS81032AT-5 uPD4382322GF-A75 GS88032BT-150 UPD4311231LGF-A8


    Original     		uPD4382321GF-A85 GS880F32BT-7 uPD4382321GF-A90 uPD4382322GF-A67 GS88032BT-200 UPD4311231LGF-A7 GS81032AT-5 uPD4382322GF-A75 GS88032BT-150 UPD44164185F5-E60-EQ1 UPD44165362F5-E60-EQ1 UPD444016LG5-A12-7JF UPD4482161GF-A85 UPD44325094F5-E33-EQ2 uPD431232ALGF-A10 uPD431232ALGF-A12 uPD431232ALGF-A7 uPD431232ALGF-A8 uPD431532LGF-A10 PDF

    GS880F18B

    Abstract: GS880F32B GS880F36B
    Text: GS880F18/32/36BT-5.5/6/6.5/7/7.5/8.5 100-Pin TQFP Commercial Temp Industrial Temp 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs Features • Flow Through mode operation; Pin 14 = No Connect • 2.5 V or 3.3 V +10%/–10% core power supply • 2.5 V or 3.3 V I/O supply


    Original     		GS880F18/32/36BT-5 100-Pin 100-lead GS880F18B GS880F32B GS880F36B PDF

    Untitled

    Abstract: No abstract text available
    Text: GS880F18/32/36BT-4.5/5/5.5/6.5/7.5 4.5 ns–7.5 ns 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 100-Pin TQFP Commercial Temp Industrial Temp Features • Flow Through mode operation; Pin 14 = No Connect • 2.5 V or 3.3 V +10%/–10% core power supply


    Original     		GS880F18/32/36BT-4 100-Pin 100-lead PDF

    K7A803609B-PC25

    Abstract: K7A403600B-PC16 K7I161882B-EC16 K6R4016V1D-TC08 K7A403600M-QC16 K7I161882B-EC30 K6R4008V1C-JC12 K6R4016V1D-UC10 K6R1008V1C-JC10 K7R643682M-FC20
    Text: SAMSUNG # - Connect pin 14 FT pin to Vss * - Tie down extra four I/Os with resistor K6R1016V1C-FC10 K6R1016V1C-FC12 K6R1016V1C-FC15 K6R1016V1C-FC20 K6R1016V1C-JC10 K6R1016V1C-JC12 K6R1016V1C-JC15 K6R1016V1C-JC20 K6R1016V1C-TC10 K6R1016V1C-TC12 K6R1016V1C-TC15


    Original     		K6R1016V1C-FC10 K6R1016V1C-FC12 K6R1016V1C-FC15 K6R1016V1C-FC20 K6R1016V1C-JC10 K6R1016V1C-JC12 K6R1016V1C-JC15 K6R1016V1C-JC20 K6R1016V1C-TC10 K6R1016V1C-TC12 K7A803609B-PC25 K7A403600B-PC16 K7I161882B-EC16 K6R4016V1D-TC08 K7A403600M-QC16 K7I161882B-EC30 K6R4008V1C-JC12 K6R4016V1D-UC10 K6R1008V1C-JC10 K7R643682M-FC20 PDF

    IS61LF51232-8

    Abstract: IS61LV25616AL-8TL IS61LF51232 IS61LV5128L-10T GS71116AU-10E 167ML IS61NLP25636A-200TQL IS61QDB22M36 IS61LPS51236-150B IS61LV5128L-12T
    Text: ISSI * - Tie down extra four I/Os with resistor + - Tie down extra two I/Os with resistor # - Connect pin 14 FT pin to Vss IS61DDB22M36-167M3 IS61DDB22M36-167M3L IS61DDB22M36-167ML IS61DDB22M36-200M IS61DDB22M36-200M3 IS61DDB22M36-200M3L IS61DDB22M36-200ML


    Original     		IS61DDB22M36-167M3 IS61DDB22M36-167M3L IS61DDB22M36-167ML IS61DDB22M36-200M IS61DDB22M36-200M3 IS61DDB22M36-200M3L IS61DDB22M36-200ML IS61DDB22M36-250M IS61DDB22M36-250M3 IS61DDB22M36-250M3L IS61LF51232-8 IS61LV25616AL-8TL IS61LF51232 IS61LV5128L-10T GS71116AU-10E 167ML IS61NLP25636A-200TQL IS61QDB22M36 IS61LPS51236-150B IS61LV5128L-12T PDF

    2006.10.21

    Abstract: GS880F18BT-5 GS880F18BT-6 GS880F18BT-7 GS880F32BT-5 GS880F32BT-6 GS880F32BT-7 GS880F36BT-6
    Text: GS880F18/32/36BT-xxxV 100-Pin TQFP Commercial Temp Industrial Temp 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs Features • Flow Through operation; Pin 14 = No Connect • 1.8 V or 2.5 V +10%/–10% core power supply • 1.8 V or 2.5 V I/O supply


    Original     		GS880F18/32/36BT-xxxV 100-Pin 100-lead GS880F18/32/36BT-xxxV 184-bit 608bit 2006.10.21 GS880F18BT-5 GS880F18BT-6 GS880F18BT-7 GS880F32BT-5 GS880F32BT-6 GS880F32BT-7 GS880F36BT-6 PDF

    Untitled

    Abstract: No abstract text available
    Text: GS880F18/32/36BT-4.5/5/5.5/6.5/7.5 4.5 ns–7.5 ns 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs n rN Functional Description fo Byte Write and Global Write Byte write operation is performed by using Byte Write enable


    Original     		GS880F18/32/36BT-4 100-Pin 100-lead PDF

    GS880F18BT-5

    Abstract: GS880F18BT-6 GS880F18BT-7 GS880F32BT-5 GS880F32BT-6 GS880F32BT-7 GS880F36BT-6
    Text: GS880F18/32/36BT-xxxV 100-Pin TQFP Commercial Temp Industrial Temp 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs Features • Flow Through operation; Pin 14 = No Connect • 1.8 V or 2.5 V +10%/–10% core power supply • 1.8 V or 2.5 V I/O supply


    Original     		GS880F18/32/36BT-xxxV 100-Pin 100-lead GS880F18/32/36BT-xxxV 184-bit 608bit GS880F18BT-5 GS880F18BT-6 GS880F18BT-7 GS880F32BT-5 GS880F32BT-6 GS880F32BT-7 GS880F36BT-6 PDF

    CY7C1338-100AXC

    Abstract: gvt7164d32q-6 CY7C1049BV33-12VXC CY7C1363C-133AC CY7C1021DV33-12ZXC CY7C1460AV25-200AXC CY7C1338G-100AC CY7C1041V33-12ZXC CY7C1460V33-200AXC CY7C1021DV33-10ZXC
    Text: CYPRESS / GALVANTECH # - Connect pin 14 FT pin to Vss CY7C1019BV33-15VC GS71108AJ-12 & - Does not support 1.8V I/O CY7C1019BV33-15VXC GS71108AGJ-12 * - Tie down extra four I/Os with resistor CY7C1019BV33-15ZC GS71108ATP-12 CY7C1019BV33-15ZXC GS71108AGP-12


    Original     		CY7C1019BV33-15VC GS71108AJ-12 CY7C1019BV33-15VXC GS71108AGJ-12 CY7C1019BV33-15ZC GS71108ATP-12 CY7C1019BV33-15ZXC GS71108AGP-12 CY7C1019CV33-10VC GS71108AJ-10 CY7C1338-100AXC gvt7164d32q-6 CY7C1049BV33-12VXC CY7C1363C-133AC CY7C1021DV33-12ZXC CY7C1460AV25-200AXC CY7C1338G-100AC CY7C1041V33-12ZXC CY7C1460V33-200AXC CY7C1021DV33-10ZXC PDF

    Untitled

    Abstract: No abstract text available
    Text: GS880F18/32/36BT-xxxV 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs Functional Description n es ig Byte Write and Global Write Byte write operation is performed by using Byte Write enable BW input combined with one or more individual byte write signals (Bx). In addition, Global Write (GW) is available for


    Original     		GS880F18/32/36BT-xxxV 100-Pin 100-lead GS880F18/32/36BT-xxxV 184-bit 608bit x32ogy PDF

    Untitled

    Abstract: No abstract text available
    Text: GS880F18/32/36BT-4.5/5/5.5/6.5/7.5 4.5 ns–7.5 ns 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs n rN Functional Description fo Byte Write and Global Write Byte write operation is performed by using Byte Write enable


    Original     		GS880F18/32/36BT-4 GS880F18/32/36BT 184-bit 608-bit PDF

    GS880F18B

    Abstract: GS880F18BT-5 GS880F32B GS880F36B
    Text: GS880F18/32/36BT-4.5/5/5.5/6.5/7.5 4.5 ns–7.5 ns 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 100-Pin TQFP Commercial Temp Industrial Temp Features • Flow Through mode operation; Pin 14 = No Connect • 2.5 V or 3.3 V +10%/–10% core power supply


    Original     		GS880F18/32/36BT-4 100-Pin 100-lead GS880F18/32/36BT 184-b GS880F18B GS880F18BT-5 GS880F32B GS880F36B PDF

    GS816036BGT-200

    Abstract: GS880E18BGT-150 AS7C3256-12JC AS7C33128PFS32A-166TQC AS7C331MPFS18A-166TQCN AS7C33512PFD36A AS7C34098A-10TC GS8160E36BT-150 GS832136GE-166 GS840Z36AT-100
    Text: ALLIANCE * - Tie down extra four I/Os with resistor + - Tie down extra two I/Os with resistor AS7C251MFT32A-85TQCN AS7C251MFT36A-65BC AS7C251MFT36A-65BCN AS7C251MFT36A-65TQC AS7C251MFT36A-65TQCN AS7C251MFT36A-75BC AS7C251MFT36A-75BCN AS7C251MFT36A-75TQC AS7C251MFT36A-75TQCN


    Original     		AS7C251MFT32A-85TQCN AS7C251MFT36A-65BC AS7C251MFT36A-65BCN AS7C251MFT36A-65TQC AS7C251MFT36A-65TQCN AS7C251MFT36A-75BC AS7C251MFT36A-75BCN AS7C251MFT36A-75TQC AS7C251MFT36A-75TQCN AS7C251MFT36A-85BC GS816036BGT-200 GS880E18BGT-150 AS7C3256-12JC AS7C33128PFS32A-166TQC AS7C331MPFS18A-166TQCN AS7C33512PFD36A AS7C34098A-10TC GS8160E36BT-150 GS832136GE-166 GS840Z36AT-100 PDF

    GS880F32B

    Abstract: GS880F36B GS880F18B GS880F18BT-5
    Text: GS880F18/32/36BT-4.5/5/5.5/6.5/7.5 4.5 ns–7.5 ns 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 100-Pin TQFP Commercial Temp Industrial Temp Features • Flow Through mode operation; Pin 14 = No Connect • 2.5 V or 3.3 V +10%/–10% core power supply


    Original     		GS880F18/32/36BT-4 100-Pin 100-lead GS880F18/32/36BT 43hnology GS880F32B GS880F36B GS880F18B GS880F18BT-5 PDF

    GS8640Z36

    Abstract: GS840Z18A GS816032 GS8342T36 GS8662Q18
    Text: Untitled3.fm Page 1 Wednesday, September 10, 2008 12:03 PM toc.fm Page 1 Wednesday, September 10, 2008 11:05 AM Untitled1.fm Page 1 Wednesday, September 10, 2008 11:32 AM SigmaQuad_new_20080904.fm Page 4 Wednesday, September 10, 2008 11:04 AM SigmaQuad/ CIO/SIO


    Original     		144Mb GS81302D37yy-# GS81302D19yy-# GS81302D36yy-# GS81302D18yy-# GS81302D09yy-# GS81302D08yy-# GS8640Z36 GS840Z18A GS816032 GS8342T36 GS8662Q18 PDF