GS880F18B Search Results

GS880F18B

Abstract: GS880F32B GS880F36B
Contextual Info: GS880F18/32/36BT-5.5/6/6.5/7/7.5/8.5 100-Pin TQFP Commercial Temp Industrial Temp 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs Features • Flow Through mode operation; Pin 14 = No Connect • 2.5 V or 3.3 V +10%/–10% core power supply • 2.5 V or 3.3 V I/O supply

Contextual Info: GS880F18/32/36BT-4.5/5/5.5/6.5/7.5 4.5 ns–7.5 ns 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 100-Pin TQFP Commercial Temp Industrial Temp Features • Flow Through mode operation; Pin 14 = No Connect • 2.5 V or 3.3 V +10%/–10% core power supply

K7A803609B-PC25

Abstract: K7A403600B-PC16 K7I161882B-EC16 K6R4016V1D-TC08 K7A403600M-QC16 K7I161882B-EC30 K6R4008V1C-JC12 K6R4016V1D-UC10 K6R1008V1C-JC10 K7R643682M-FC20
Contextual Info: SAMSUNG # - Connect pin 14 FT pin to Vss * - Tie down extra four I/Os with resistor K6R1016V1C-FC10 K6R1016V1C-FC12 K6R1016V1C-FC15 K6R1016V1C-FC20 K6R1016V1C-JC10 K6R1016V1C-JC12 K6R1016V1C-JC15 K6R1016V1C-JC20 K6R1016V1C-TC10 K6R1016V1C-TC12 K6R1016V1C-TC15

IS61LF51232-8

Abstract: IS61LV25616AL-8TL IS61LF51232 IS61LV5128L-10T GS71116AU-10E 167ML IS61NLP25636A-200TQL IS61QDB22M36 IS61LPS51236-150B IS61LV5128L-12T
Contextual Info: ISSI * - Tie down extra four I/Os with resistor + - Tie down extra two I/Os with resistor # - Connect pin 14 FT pin to Vss IS61DDB22M36-167M3 IS61DDB22M36-167M3L IS61DDB22M36-167ML IS61DDB22M36-200M IS61DDB22M36-200M3 IS61DDB22M36-200M3L IS61DDB22M36-200ML

2006.10.21

Abstract: GS880F18BT-5 GS880F18BT-6 GS880F18BT-7 GS880F32BT-5 GS880F32BT-6 GS880F32BT-7 GS880F36BT-6
Contextual Info: GS880F18/32/36BT-xxxV 100-Pin TQFP Commercial Temp Industrial Temp 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs Features • Flow Through operation; Pin 14 = No Connect • 1.8 V or 2.5 V +10%/–10% core power supply • 1.8 V or 2.5 V I/O supply

Contextual Info: GS880F18/32/36BT-4.5/5/5.5/6.5/7.5 4.5 ns–7.5 ns 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs n rN Functional Description fo Byte Write and Global Write Byte write operation is performed by using Byte Write enable

GS880F18BT-5

Abstract: GS880F18BT-6 GS880F18BT-7 GS880F32BT-5 GS880F32BT-6 GS880F32BT-7 GS880F36BT-6
Contextual Info: GS880F18/32/36BT-xxxV 100-Pin TQFP Commercial Temp Industrial Temp 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs Features • Flow Through operation; Pin 14 = No Connect • 1.8 V or 2.5 V +10%/–10% core power supply • 1.8 V or 2.5 V I/O supply

CY7C1338-100AXC

Abstract: gvt7164d32q-6 CY7C1049BV33-12VXC CY7C1363C-133AC CY7C1021DV33-12ZXC CY7C1460AV25-200AXC CY7C1338G-100AC CY7C1041V33-12ZXC CY7C1460V33-200AXC CY7C1021DV33-10ZXC
Contextual Info: CYPRESS / GALVANTECH # - Connect pin 14 FT pin to Vss CY7C1019BV33-15VC GS71108AJ-12 & - Does not support 1.8V I/O CY7C1019BV33-15VXC GS71108AGJ-12 * - Tie down extra four I/Os with resistor CY7C1019BV33-15ZC GS71108ATP-12 CY7C1019BV33-15ZXC GS71108AGP-12

UPD44164185F5-E60-EQ1

Abstract: UPD44165362F5-E60-EQ1 UPD444016LG5-A12-7JF UPD4482161GF-A85 UPD44325094F5-E33-EQ2 uPD431232ALGF-A10 uPD431232ALGF-A12 uPD431232ALGF-A7 uPD431232ALGF-A8 uPD431532LGF-A10
Contextual Info: NEC * - Tie down extra four I/Os with resistor uPD4382321GF-A85 GS880F32BT-7.5 + - Tie down extra two I/Os with resistor uPD4382321GF-A90 GS880F32BT-7.5 uPD4382322GF-A67 GS88032BT-200 UPD4311231LGF-A7 GS81032AT-5 uPD4382322GF-A75 GS88032BT-150 UPD4311231LGF-A8

Contextual Info: GS880F18/32/36BT-xxxV 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs Functional Description n es ig Byte Write and Global Write Byte write operation is performed by using Byte Write enable BW input combined with one or more individual byte write signals (Bx). In addition, Global Write (GW) is available for

Contextual Info: GS880F18/32/36BT-4.5/5/5.5/6.5/7.5 4.5 ns–7.5 ns 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs n rN Functional Description fo Byte Write and Global Write Byte write operation is performed by using Byte Write enable

GS880F18B

Abstract: GS880F18BT-5 GS880F32B GS880F36B
Contextual Info: GS880F18/32/36BT-4.5/5/5.5/6.5/7.5 4.5 ns–7.5 ns 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 100-Pin TQFP Commercial Temp Industrial Temp Features • Flow Through mode operation; Pin 14 = No Connect • 2.5 V or 3.3 V +10%/–10% core power supply

GS816036BGT-200

Abstract: GS880E18BGT-150 AS7C3256-12JC AS7C33128PFS32A-166TQC AS7C331MPFS18A-166TQCN AS7C33512PFD36A AS7C34098A-10TC GS8160E36BT-150 GS832136GE-166 GS840Z36AT-100
Contextual Info: ALLIANCE * - Tie down extra four I/Os with resistor + - Tie down extra two I/Os with resistor AS7C251MFT32A-85TQCN AS7C251MFT36A-65BC AS7C251MFT36A-65BCN AS7C251MFT36A-65TQC AS7C251MFT36A-65TQCN AS7C251MFT36A-75BC AS7C251MFT36A-75BCN AS7C251MFT36A-75TQC AS7C251MFT36A-75TQCN

GS880F32B

Abstract: GS880F36B GS880F18B GS880F18BT-5
Contextual Info: GS880F18/32/36BT-4.5/5/5.5/6.5/7.5 4.5 ns–7.5 ns 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 100-Pin TQFP Commercial Temp Industrial Temp Features • Flow Through mode operation; Pin 14 = No Connect • 2.5 V or 3.3 V +10%/–10% core power supply

GS8640Z36

Abstract: GS840Z18A GS816032 GS8342T36 GS8662Q18
Contextual Info: Untitled3.fm Page 1 Wednesday, September 10, 2008 12:03 PM toc.fm Page 1 Wednesday, September 10, 2008 11:05 AM Untitled1.fm Page 1 Wednesday, September 10, 2008 11:32 AM SigmaQuad_new_20080904.fm Page 4 Wednesday, September 10, 2008 11:04 AM SigmaQuad/ CIO/SIO