GS8161E18B Search Results

GS8161E18B Datasheets (9)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
GS8161E18B		GIGA	18Mb Burst SRAMs		Original	PDF
GS8161E18BT		GIGA	1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs		Original	PDF
GS8161E18BT-150		GIGA	1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs		Original	PDF
GS8161E18BT-150V		GIGA	1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs		Original	PDF
GS8161E18BT-200		GIGA	1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs		Original	PDF
GS8161E18BT-200V		GIGA	1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs		Original	PDF
GS8161E18BT-250		GIGA	1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs		Original	PDF
GS8161E18BT-250V		GIGA	1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs		Original	PDF
GS8161E18BT-V		GIGA	1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs		Original	PDF

GS8161E18B Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
GS8161E36BGD-250 Abstract: No abstract text available Text: Preliminary GS8161E18B T/D /GS8161E32B(D)/GS8161E36B(T/D) 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect (DCD) operation	Original	PDF	GS8161E18B /GS8161E32B /GS8161E36B 100-Pin 165-Bump 100-lead 51ntation GS8161E36BGD-250
GS8161E18B Abstract: GS8161E18BT-150 GS8161E18BT-200 GS8161E18BT-250 GS8161E36B QC2004 Text: Preliminary GS8161E18B T/D /GS8161E32B(D)/GS8161E36B(T/D) 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect (DCD) operation	Original	PDF	GS8161E18B /GS8161E32B /GS8161E36B 100-Pin 165-Bump 100-lead GS8161E18BT-150 GS8161E18BT-200 GS8161E18BT-250 GS8161E36B QC2004
Untitled Abstract: No abstract text available Text: GS8161E18B T/D /GS8161E32B(D)/GS8161E36B(T/D) 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 250 MHz–150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline operation	Original	PDF	GS8161E18B /GS8161E32B /GS8161E36B 100-Pin 165-Bump
GS8161E36B Abstract: GS8161E18B GS8161E18BT-150 GS8161E18BT-200 GS8161E18BT-250 Text: GS8161E18B T/D /GS8161E32B(D)/GS8161E36B(T/D) 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect (DCD) operation	Original	PDF	GS8161E18B /GS8161E32B /GS8161E36B 100-Pin 165-Bump 100-lead GS8161E36B GS8161E18BT-150 GS8161E18BT-200 GS8161E18BT-250
QC2004 Abstract: GS8161E18B GS8161E18BT-150 GS8161E18BT-200 GS8161E18BT-250 GS8161E36B Text: GS8161E18B T/D /GS8161E32B(D)/GS8161E36B(T/D) 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect (DCD) operation	Original	PDF	GS8161E18B /GS8161E32B /GS8161E36B 100-Pin 165-Bump 100-lead QC2004 GS8161E18BT-150 GS8161E18BT-200 GS8161E18BT-250 GS8161E36B
Untitled Abstract: No abstract text available Text: GS8161E18B T/D /GS8161E32B(D)/GS8161E36B(T/D) 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect (DCD) operation • IEEE 1149.1 JTAG-compatible Boundary Scan • 2.5 V or 3.3 V +10%/–10% core power supply	Original	PDF	GS8161E18B /GS8161E32B /GS8161E36B 100-lead 165-bump
GS8161E18B Abstract: GS8161E18BT-150 GS8161E18BT-200 GS8161E18BT-250 GS8161E36B Text: GS8161E18B T/D /GS8161E32B(D)/GS8161E36B(T/D) 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect (DCD) operation	Original	PDF	GS8161E18B /GS8161E32B /GS8161E36B 100-Pin 165-Bump 100-lead GS8161E18BT-150 GS8161E18BT-200 GS8161E18BT-250 GS8161E36B
Untitled Abstract: No abstract text available Text: Preliminary GS8161ExxB T/D -xxxV 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect (DCD) operation	Original	PDF	GS8161ExxB 100-Pin 165-Bump 100-lead 8161Exx-xxxV
GS8161E18BT-150V Abstract: GS8161E18BT-200V GS8161E18BT-250V QC2004 Text: Preliminary GS8161ExxB T/D -xxxV 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect (DCD) operation	Original	PDF	GS8161ExxB 100-Pin 165-Bump 100-lead 100-tion 8161Exx-xxxV GS8161E18BT-150V GS8161E18BT-200V GS8161E18BT-250V QC2004
Untitled Abstract: No abstract text available Text: GS8161ExxB T/D -xxxV 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 250 MHz–150 MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline	Original	PDF	GS8161ExxB 100-Pin 165-Bump 8161Exx-xxxV
K7A803609B-PC25 Abstract: K7A403600B-PC16 K7I161882B-EC16 K6R4016V1D-TC08 K7A403600M-QC16 K7I161882B-EC30 K6R4008V1C-JC12 K6R4016V1D-UC10 K6R1008V1C-JC10 K7R643682M-FC20 Text: SAMSUNG # - Connect pin 14 FT pin to Vss * - Tie down extra four I/Os with resistor K6R1016V1C-FC10 K6R1016V1C-FC12 K6R1016V1C-FC15 K6R1016V1C-FC20 K6R1016V1C-JC10 K6R1016V1C-JC12 K6R1016V1C-JC15 K6R1016V1C-JC20 K6R1016V1C-TC10 K6R1016V1C-TC12 K6R1016V1C-TC15	Original	PDF	K6R1016V1C-FC10 K6R1016V1C-FC12 K6R1016V1C-FC15 K6R1016V1C-FC20 K6R1016V1C-JC10 K6R1016V1C-JC12 K6R1016V1C-JC15 K6R1016V1C-JC20 K6R1016V1C-TC10 K6R1016V1C-TC12 K7A803609B-PC25 K7A403600B-PC16 K7I161882B-EC16 K6R4016V1D-TC08 K7A403600M-QC16 K7I161882B-EC30 K6R4008V1C-JC12 K6R4016V1D-UC10 K6R1008V1C-JC10 K7R643682M-FC20
IS61LF51232-8 Abstract: IS61LV25616AL-8TL IS61LF51232 IS61LV5128L-10T GS71116AU-10E 167ML IS61NLP25636A-200TQL IS61QDB22M36 IS61LPS51236-150B IS61LV5128L-12T Text: ISSI * - Tie down extra four I/Os with resistor + - Tie down extra two I/Os with resistor # - Connect pin 14 FT pin to Vss IS61DDB22M36-167M3 IS61DDB22M36-167M3L IS61DDB22M36-167ML IS61DDB22M36-200M IS61DDB22M36-200M3 IS61DDB22M36-200M3L IS61DDB22M36-200ML	Original	PDF	IS61DDB22M36-167M3 IS61DDB22M36-167M3L IS61DDB22M36-167ML IS61DDB22M36-200M IS61DDB22M36-200M3 IS61DDB22M36-200M3L IS61DDB22M36-200ML IS61DDB22M36-250M IS61DDB22M36-250M3 IS61DDB22M36-250M3L IS61LF51232-8 IS61LV25616AL-8TL IS61LF51232 IS61LV5128L-10T GS71116AU-10E 167ML IS61NLP25636A-200TQL IS61QDB22M36 IS61LPS51236-150B IS61LV5128L-12T
GS8161E18BT-150V Abstract: GS8161E18BT-200V GS8161E18BT-250V Text: Preliminary GS8161ExxB T/D -xxxV 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect (DCD) operation	Original	PDF	GS8161ExxB 100-Pin 165-Bump 100-lead 8161Exx-xxxV GS8161E18BT-150V GS8161E18BT-200V GS8161E18BT-250V
Untitled Abstract: No abstract text available Text: GS8161ExxB T/D -xxxV 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect (DCD) operation • IEEE 1149.1 JTAG-compatible Boundary Scan • 1.8 V or 2.5 V core power supply	Original	PDF	GS8161ExxB 100-lead 8161Exx-xxxV

GS816036BGT-200 Abstract: GS880E18BGT-150 AS7C3256-12JC AS7C33128PFS32A-166TQC AS7C331MPFS18A-166TQCN AS7C33512PFD36A AS7C34098A-10TC GS8160E36BT-150 GS832136GE-166 GS840Z36AT-100 Text: ALLIANCE * - Tie down extra four I/Os with resistor + - Tie down extra two I/Os with resistor AS7C251MFT32A-85TQCN AS7C251MFT36A-65BC AS7C251MFT36A-65BCN AS7C251MFT36A-65TQC AS7C251MFT36A-65TQCN AS7C251MFT36A-75BC AS7C251MFT36A-75BCN AS7C251MFT36A-75TQC AS7C251MFT36A-75TQCN	Original	PDF	AS7C251MFT32A-85TQCN AS7C251MFT36A-65BC AS7C251MFT36A-65BCN AS7C251MFT36A-65TQC AS7C251MFT36A-65TQCN AS7C251MFT36A-75BC AS7C251MFT36A-75BCN AS7C251MFT36A-75TQC AS7C251MFT36A-75TQCN AS7C251MFT36A-85BC GS816036BGT-200 GS880E18BGT-150 AS7C3256-12JC AS7C33128PFS32A-166TQC AS7C331MPFS18A-166TQCN AS7C33512PFD36A AS7C34098A-10TC GS8160E36BT-150 GS832136GE-166 GS840Z36AT-100
GS8161E18BT-150V Abstract: GS8161E18BT-200V GS8161E18BT-250V Text: GS8161ExxB T/D -xxxV 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect (DCD) operation • IEEE 1149.1 JTAG-compatible Boundary Scan	Original	PDF	GS8161ExxB 100-Pin 165-Bump 100-lead 8161Exx-xxxV GS8161E18BT-150V GS8161E18BT-200V GS8161E18BT-250V
GS8673EQ Abstract: SIGMA SigmaQuad-IIIe GS8673ED36 5502M GS8322Z36 GS816032 GS8171DW GS8673ET36 GS8673ED18 Text: Untitled3.fm Page 1 Tuesday, March 30, 2010 10:58 AM Untitled4.fm Page 1 Tuesday, March 30, 2010 11:08 AM SigmaQuad_2010_0408.fm Page 3 Thursday, April 15, 2010 11:44 AM SigmaQuad-IIIe SRAMs 72Mb SigmaQuad-IIIe+ Config GS8673ED37Ayy-### GS8673ED19Ayy-### 2M x 36	Original	PDF	GS8673ED37Ayy-# GS8673ED19Ayy-# GS8673EQ37Ayy-# GS8673EQ19Ayy-# GS8673EQ SIGMA SigmaQuad-IIIe GS8673ED36 5502M GS8322Z36 GS816032 GS8171DW GS8673ET36 GS8673ED18
GS8640Z36 Abstract: GS840Z18A GS816032 GS8342T36 GS8662Q18 Text: Untitled3.fm Page 1 Wednesday, September 10, 2008 12:03 PM toc.fm Page 1 Wednesday, September 10, 2008 11:05 AM Untitled1.fm Page 1 Wednesday, September 10, 2008 11:32 AM SigmaQuad_new_20080904.fm Page 4 Wednesday, September 10, 2008 11:04 AM SigmaQuad/ CIO/SIO	Original	PDF	144Mb GS81302D37yy-# GS81302D19yy-# GS81302D36yy-# GS81302D18yy-# GS81302D09yy-# GS81302D08yy-# GS8640Z36 GS840Z18A GS816032 GS8342T36 GS8662Q18