GS8161EXXB Search Results
GS8161EXXB Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Preliminary GS8161ExxB T/D -xxxV 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect (DCD) operation |
Original |
GS8161ExxB 100-Pin 165-Bump 100-lead 8161Exx-xxxV | |
GS8161E18BT-150V
Abstract: GS8161E18BT-200V GS8161E18BT-250V QC2004
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Original |
GS8161ExxB 100-Pin 165-Bump 100-lead 100-tion 8161Exx-xxxV GS8161E18BT-150V GS8161E18BT-200V GS8161E18BT-250V QC2004 | |
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Contextual Info: GS8161ExxB T/D -xxxV 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 250 MHz–150 MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline |
Original |
GS8161ExxB 100-Pin 165-Bump 8161Exx-xxxV | |
GS8161E18BT-150V
Abstract: GS8161E18BT-200V GS8161E18BT-250V
|
Original |
GS8161ExxB 100-Pin 165-Bump 100-lead 8161Exx-xxxV GS8161E18BT-150V GS8161E18BT-200V GS8161E18BT-250V | |
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Contextual Info: GS8161ExxB T/D -xxxV 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect (DCD) operation • IEEE 1149.1 JTAG-compatible Boundary Scan • 1.8 V or 2.5 V core power supply |
Original |
GS8161ExxB 100-lead 8161Exx-xxxV | |
GS8161E18BT-150V
Abstract: GS8161E18BT-200V GS8161E18BT-250V
|
Original |
GS8161ExxB 100-Pin 165-Bump 100-lead 8161Exx-xxxV GS8161E18BT-150V GS8161E18BT-200V GS8161E18BT-250V |