GS3018K
Abstract: No abstract text available
Text: Pb Free Plating Product ISSUED DATE :2005/04/27 REVISED DATE :2005/07/12B GS3018K N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS ON ID 30V 8 640mA Description The GS3018K utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely
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2005/07/12B
GS3018K
640mA
GS3018K
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GS3018
Abstract: No abstract text available
Text: Pb Free Plating Product ISSUED DATE :2004/11/24 REVISED DATE :2005/12/02C GS3018 BVDSS RDS ON ID N-CHANNEL MOSFET Description 30V 8 115mA N-channel enhancement-mode MOSFET Features Low on-resistance. Fast switching speed. Low voltage drive (2.5V) makes this device ideal for portable equipment.
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2005/12/02C
GS3018
115mA
GS3018
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1N8 transistor
Abstract: GS3018 capacitor 50k telecoil class d MV4044
Text: Class D Preamp with Anti-Aliasing Network GS3018 - HYB DATA SHEET FEATURES Provisions have been made on the hybrid to allow the manufacturer to increase or decrease this corner frequency with the addition of a capacitor. As the class D receiver utilizes a 100 kHz clock, lower harmonics of the frequency
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GS3018
GR504,
1N8 transistor
capacitor 50k
telecoil
class d
MV4044
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ic for tele-coil
Abstract: No abstract text available
Text: f Class D Preamp with Anti-Aliasing Network G ENNUM C O R P O R A T I O N GS3018 - HYB DATA SHEET FEATURES • incorporates G R 5 0 4 ,3 stage amplifer chip Provisions have been made on the hybrid to allow the • designed to drive class D integrated receivers
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OCR Scan
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GS3018
ic for tele-coil
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Untitled
Abstract: No abstract text available
Text: n e IV I IV I L I IM I U C OER I P^ OI IR I IA W T I IOY N I Class D Preamp with Anti-Aliasing Network GS301 8 - HYB DATA SHEET FEATURES • incorporates GR504, 3 stage amplifer chip P ro v is io n s ha ve b e e n m a d e on th e h y b r id to a llo w the
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OCR Scan
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GS301
GR504,
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