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    GE SOLID STATE POWER TRANSISTOR Search Results

    GE SOLID STATE POWER TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    GE SOLID STATE POWER TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC2922 SANKEN

    Abstract: MJ15024 MJ15025 BDY37A SDT604 sanken 2sc2922 sanken 2sa1216 STX10 2SA1117 SDT60 MRF492A
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO PD Max hFE *T on ON) Min (Hz) 140 140 140 140 140 140 145 150 160 160 200 200 200 200 250 250 200 250 125 125 15 15 15 15 15 15 15 15 80 80 125 15 Max k)N Max (A) (8)


    Original     		PDF MJ3773 2N5631 2N6031 BDY37A TRW6259 2N6259 MJE4343 2SC2922 SANKEN MJ15024 MJ15025 SDT604 sanken 2sc2922 sanken 2sa1216 STX10 2SA1117 SDT60 MRF492A

    transistor 81L

    Abstract: NER 251 IRFD112 IRFD113
    Text: SOLID !g e s o l i » STATE 01E 18902 state D 7 "“ 3 3 -_ 2 5 3fl7S0fll DDlfllGa 5 ^ _l— ' IRFD112,113 FIELD EFFECT POWER TRANSISTOR 0.8 AMPERES 100, 60 VOLTS Rd S ON = 0.8 n This series of N-Channel Enhancem ent-m ode Power MOSFETs utilizes GE’s advanced Power DMOS technology


    OCR Scan     		PDF T-35-J5 IRFD112 TA-25Â irf0112 -irfd113 RDS10N| transistor 81L NER 251 IRFD113

    GES5812

    Abstract: intermediat GES5810 GES5811 GES5813
    Text: G E SOLID STATE 3 8 75 0 8 1 G E 01 SOLID STATE DËfJ 3Ô7SDÔ1 Gai?1!?! â 01E 17971 T D - Z s ? - ¿ .3 - Signal Transistors GES5810, GES5811, GES5812, GES5813


    OCR Scan     		PDF GES5810, GES5811, GES5812, GES5813 GES5812 GES5811 GES5813 intermediat GES5810

    2N3859

    Abstract: 2N3860 2N3859A 2N3659 2N3858 E1307 2N3868 BA 4213 2N3658 2N3858-60
    Text: SOLI» STATE ÜÏ D E | 3Ö7S0Ö1 D G l T ^ n - Signal Transistors 2N3858-60, 2N3858A, 2N3859A Silicon Transistors TO-98 The GE/RCA 2 N 3 858,2N 3859 and 2N3860 are planar epitaxlal passivated NPN silicon transistors designed primarily for


    OCR Scan     		PDF 2N3858-60, 2N3858A, 2N3859A 2N3858 2N3859 2N3860 2N3858 2N3659 2N3858A 2N3859A E1307 2N3868 BA 4213 2N3658 2N3858-60

    HGP-1004

    Abstract: 2N6354 ESB91 transistor bc 144 TA7534
    Text: 3875081 G E SOLID STATE 01 DE |3A750fll 001713^ 2~|~~ File Numfcier 582 120-V, 10-A, 140-W Silicon N-P-N Planar Transistor For Sw itching Applications in Military and Industrial Equipm ent Features: •* High Vceo{sus : 120 V ■ Maximum safe-area-of operation curves


    OCR Scan     		PDF B30750Ã 2N6354 TQ-204AA 2N6354* T0-204AA 2N6354 swi354 ----l-t--90% S2CS-20I22 HGP-1004 ESB91 transistor bc 144 TA7534

    SOLID STATE INC

    Abstract: MJ15022 15024 J15022 J15024
    Text: B SO LID STATE INC. 46 FARRAND STREET Product Specification BLOOMFIELD, NEW JERSEY 07003 www.solidstateinc.com MJ15022 MJ15024 Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • Complement to type MJ15023; MJ15025 • Excellent safe operating area


    OCR Scan     		PDF MJ15023; MJ15025 MJ15022 MJ15024 SOLID STATE INC 15024 J15022 J15024

    irf260

    Abstract: IRF260 N IRF250 MOSFET IRF250 IRF251 IRF252 IRF253 irf26
    Text: 3875081 D1 G E SOLID Ï e § STATE BÔ 7S DB 1 0 D l f l E c]4 fi File Number 0 1E 18294 - - 1825 D aianaara kower MOSFETs IRF250, IRF251, IRF252, IRF253 Power M O S Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors


    OCR Scan     		PDF IRF250, IRF251, IRF252, IRF253 92CS-3374I IRF252 75BVOSS 08TAIN irf260 IRF260 N IRF250 MOSFET IRF250 IRF251 IRF253 irf26

    CNY33

    Abstract: CNY35 D29E2 D45H8 I20VAC 86Vac
    Text: SOLID STATE 01 Optoelectronic Specifications » e I bü TSDÖI 001'ifl3ñ S T -*V < -5 3 Photon Coupled Isolator CNY33 Ga As Infrared Emitting Diode & NPN Silicon High Voltage Photo-Transistor The GE Solid State CNY33 is a gallium arsenide, infrared emitting


    OCR Scan     		PDF T-Wl-53 CNY33 CNY33 CNY35 CIMY35 I20VAC D45H8 2N5308-D45H8 CNY35 D29E2 D45H8 I20VAC 86Vac

    H11AV1A

    Abstract: H11AV1 H11AV2 H11AV3 H11AV2A H11AV3A 0730-2P
    Text: G E SOLID STATE 01 DE|3fl750fll 0an70fa O p to e le c tr o n ic s p e c ific a tio n s . Photon Coupled Isolator H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A Ga As Infrared Emitting Diode & NPN Silicon Photo-Transistor The GE Solid State HllAV series consists of a gallium arsenide, infrared


    OCR Scan     		PDF 3fl750fll 0an70fa 0730-2P. H11AV1A, 11AV2A 11AV3A H11AV2 H11AV3. H11AV1, H11AV2, H11AV1A H11AV1 H11AV3 H11AV2A H11AV3A 0730-2P

    2N6782

    Abstract: c0366 diode sv 0367
    Text: □1 E SOLID STATE DE I 3 fi7 S □ fl1 Q01Û 4DÔ fi f - — - Z aianaarcfl'ower M O S F E T s 2N6782 File Number 1592 Power M O S Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N -C H A N N E L E N H A N C E M E N T M O D E


    OCR Scan     		PDF 2N6782 2N6782 1A41E c0366 diode sv 0367

    GE SC160B triac

    Abstract: C203B varistor 7k 270 H11AG1 H11AG2 H11AG3 dt230h
    Text: “g e solid state 01 De | 3 0 7 5 0 0 1 0 0 1 ^ 7 0 2 o p t o e le c t r o n ic S p e c if ic a t io n s T-qi-83 Photon Coupled Isolator H11AG1, H11AG2, H11AG3 j-1 . Ga Al As Infrared Emitting Diode & NPN Silicon Photo-Transistor The GE Solid State H llAG series consists of a gallium arsenide infrared 3


    OCR Scan     		PDF T-qi-83 H11AG1, H11AG2, H11AG3 H11AG1 GE SC160B triac C203B varistor 7k 270 H11AG2 H11AG3 dt230h

    transistor 2n4871

    Abstract: GET4871 2N4871 RCA 2N 2n4871 transistor 4871 RCA SCR 2n RCA Solid State Power Transistor
    Text: G E SOLID STATE 3875081 01 G E SOLID STATE U n iju n c tio n T r a n s is to r s a n ri S w itc h e s DET|3a7SDñl OOlñüOH ti 01E - 18004 D T -31-2I 2N4870, 2N4871, GET4870, GET4871 Silicon Unijunction Transistors


    OCR Scan     		PDF -31-2I 2N4870, 2N4871, GET4870, GET4871 T4870 92CS-42309 2N4870 transistor 2n4871 2N4871 RCA 2N 2n4871 transistor 4871 RCA SCR 2n RCA Solid State Power Transistor

    2N5249

    Abstract: 17T4S 2N5249A tj260 "to-98" package 12015C
    Text: G E SOLI » 01 STATE 3 87 5 0 8 1 G E SOLID DE I 3075001 0017^44 S | ~ 01E STATE 17944 D T 'Z 9 '/ f Signal Transistors- 2N5249, 2N5249A Silicon Transistors TO-98 The GE/RCA 2N5249 and 2N5249A are planar epitaxial pas­ sivated NPN Silicon transistors designed especially for low


    OCR Scan     		PDF 2N5249, 2N5249A T-29-/? 2N5249 2N5249A 92CS-4249Â D017T4b 17T4S tj260 "to-98" package 12015C

    "to-98" package

    Abstract: 2N3415 2n3416 2n3417
    Text: G E SOLID STATE 3875081 ~ 01 G E S O L I D STATE DE | BÖ7S0Ö1 □□IVTIS T 01E 17915 D Signal Transistors 2N3414-17, GES3414-17 - r a Silicon Transistors TO-92 TO-98 The GE/RCA Types 2N3414-17and GES3414-17 are planar epitaxial passivated NPN silicon transistors Intended for


    OCR Scan     		PDF 2N3414-17, GES3414-17 2N3414-17and GES3414-17 GES3414-17) 2N3414-17) 2N3414 2N3416 "to-98" package 2N3415 2n3416 2n3417

    MPSA42 amplifier

    Abstract: MPS-A42 MPS-A43 MPS-A92 MPS-A93 tj260 MPSA42A
    Text: G E SOLID STATE DÏ 3875081 G E SOLID STATE D E | 3 ñ 7 S 0 ñ l OOIVTÖÖ 01E 17988 T ~ 2 - ? “ 2- / Signal Transistors - MPS-A42, A43, MPS-A92, A93


    OCR Scan     		PDF 0D17TÃ MPS-A42, MPS-A92, MPS-A43 MPS-A42 MPSA42 amplifier MPS-A92 MPS-A93 tj260 MPSA42A

    pt 100 - to92

    Abstract: pt 100 to92 MPS-A63 MPS-A64 MPSA63
    Text: G Ql E SOLID STATE 3875081 G E SOLID STATE Signal Transistors_ DE § 3û750âl □G17tn G 01E 17990 1 D _ 2.7 MPS-A63, MPS-A64 Silicon Darlington Transistors TO-92 The GE/RCA MPS-A63 and A64 are planar epitaxial passivated PNP silicon Darlington transistors designed for preamplitier input applications where high im pedance is a


    OCR Scan     		PDF MPS-A63, MPS-A64 MPS-A63 MPS-A63 100mA 100kHz) 300ns pt 100 - to92 pt 100 to92 MPS-A64 MPSA63

    GES2904

    Abstract: GES2904A GES2905 GES2905A
    Text: G E SOLID STATE 38 75081 Dl G E SOLID STATE i>F|~3fl75Gfll □□17Tb? 01E 17967 D • - Signal Transistors GES2904,04A, GES2905, 05A Silicon Transistors


    OCR Scan     		PDF 3fl75Gfil GES2904 GES2905 GES2904A GES2905A 500mA, 150mA, GES2905A

    BFT198

    Abstract: BFT19B BFT19 BFT19A
    Text: G E SOLID STATE 3875081 G E SOLID Dl □1 STATE de DE | g 3Ô7SDÛ1 DD17S75 D 01E 17575 DT^ i ; - / 7 Pro Electron Power BFT19, BFT19A, BFT19B


    OCR Scan     		PDF DD17S75 BFT19, BFT19A, BFT19B BFT19B) BFT19A) BFT19) BFT198 BFT19 BFT19A

    transistor 2n4871

    Abstract: 2N4871 2N4870 GET4871 SCR firing unijunction transistor 2n4870 2n4871 transistor unijunction bi14 GET4870
    Text: G E SOLID STATE 3875081 □Ï G E SOLID ]>E~ 3fl75Dfll □□IfiQOM (a STATE U n i j u n c t i o n T r a n s is t o r s a n r l S w it c h e s 01E 18004 D - T 31-21 2N4870,2N4871, GET4870, GET4871 Silicon Unijunction Transistors TO-92 TO-18 The GE/RC A 2 N 4 8 7 0,2N 4 8 71 , and GET4870, GET4871 are


    OCR Scan     		PDF 2N4870, 2N4871, GET4870, GET4871 2N4870 GET4871 GET4870 transistor 2n4871 2N4871 SCR firing unijunction transistor 2n4870 2n4871 transistor unijunction bi14

    2N4990

    Abstract: 2N4987 SUS 2N4987 SUS GE 2N4987 2N4989 2N4988 Silicon unilateral switch 42322 DETJ3075001 2N4987-90
    Text: G E SOLID STATE □1 DE I 3fl750fll □□1ÛD11 3 | 0 1E 18011 3875081 G E SOLID STATE D . Unijunction Transistors and Switches 2N4987, 2N4988, 2N4989, 2N4990 T ' Z S - c ^ Silicon Unilateral Switch Applications: • SCR Triggers ■ Frequency Drivers ■ Ring Counters


    OCR Scan     		PDF 3fl750fll 2N4987, 2N4988 2N4989 2N4990 2N4987-90 2N4969 S2CS-42T47 J2N2647 001JJF 2N4987 SUS 2N4987 SUS GE 2N4987 Silicon unilateral switch 42322 DETJ3075001

    2N4991

    Abstract: 2N4992 GE 2N4992 low voltage scr TRIAC 18007 unijunction application note silicon bilateral switch 2n4992
    Text: G E SOLID STATE Dl 3875081 G E SOLID STATE DE|3fl75Qfll DDlflOD? 1 | ~ 01E 18007 D I - ^ 5 - 6 ? -Unijunction Transistors and Switches 2N4991, 2N4992 Silicon Bilateral Switch


    OCR Scan     		PDF 2N4991, 2N4992 2N4992 120fiA) 2CS-4235C 2CS-423SÂ 2N4991 GE 2N4992 low voltage scr TRIAC 18007 unijunction application note silicon bilateral switch 2n4992

    MPSA92

    Abstract: No abstract text available
    Text: G E SOLI» STATE GÏ 3875081 G E SOLID STATE DE 13fl75Gfll ODlVTflö 3 01E ~T~ 17988 2 - ? “ 2- / Signal Transistors .— .- MPS-A42, A43, MPS-A92, A93 Complimentary High Voltage Silicon


    OCR Scan     		PDF 13fl75Gfll MPS-A42, MPS-A92, MPS-A43 MPS-A42 MPS-A92 MPSA92

    2N2925

    Abstract: 2n2924 2N2923 "to-98" package PT 1132
    Text: SOLI» STATE 3875081 G E SOLID STATE Öl » F | 3 ö 7 S 0 a i 0017^07 01E 17907 D Signal Transls{ors" 2N2923, 2N2924, 2N2925 Silicon Transistors TO-98 The GE/RCA 2N 2923,2N 2924, and 2N2925 types are planar


    OCR Scan     		PDF 2N2923, 2N2924, 2N2925 2N2923 2N2925 2N2923 2N2924 2n2924 "to-98" package PT 1132

    GE H11A3

    Abstract: GE H11A1 H11A1 GE H11A2 H11A3 H11A1 H11A4 H11A5 lotti
    Text: G E SOLID STATE 01 DE I 3Ö7SDÖ1 DDlltflt Optoelectronic Specifications. Photon Coupled Isolator H11A1, H11A2, H11A3, H11A4, H11A5 Ga As Infrared Emitting Diode & NPN Silicon Photo-Transistor The GE Solid State H llA i thru H11A5 consist of a gallium arsenide


    OCR Scan     		PDF H11A1, H11A2, H11A3, H11A4, H11A5 H11A5 33mW/Â DE13fl7S0fll GE H11A3 GE H11A1 H11A1 GE H11A2 H11A3 H11A1 H11A4 lotti