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    GE C 716 PN Search Results

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    Catalog Datasheet MFG & Type Document Tags PDF

    Dow Corning 200

    Abstract: 313L TEFZEL awg 12 GE C 716 PN
    Text: Model 313L FEATURES: • • • • All-welded, stainless steel construction Rugged, all encapsulated electronics. Leakproof 1/2” NPT conduit thread standard Standard PRESSURE RANGES: • From 0-3 through 0-100 psig See ordering guide. ACCURACY: • From ±0.1% FSO (RSS) to ±0.5% FSO (RSS)


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    313L-B-PZ-LJ 4-20mA Dow Corning 200 313L TEFZEL awg 12 GE C 716 PN PDF

    MAX749CPA

    Abstract: No abstract text available
    Text: 19-0143; Rev 1; 2/95 NUAL KIT MA ATION HEET S A EVALU T A WS D FOLLO Digit a lly Adjust a ble LCD Bia s Supply _Applic a t ions Notebook Computers _Fe a t ure s ♦ +2.0V to +6.0V Input Voltage Range ♦ Flexible Control of Output Voltage:


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    MAX749CPA MAX749CSA 1-0043A 101mm 004in. 1-0041A MAX749CPA PDF

    Untitled

    Abstract: No abstract text available
    Text: FGA30N65SMD 650 V, 30 A Field Stop IGBT Features General Description • Maximum Junction Temperature : TJ =175oC Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low


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    FGA30N65SMD 175oC PDF

    Untitled

    Abstract: No abstract text available
    Text: FGA30N65SMD 650 V, 30 A Field Stop IGBT Features General Description o Using novel field stop IGBT technology, Fairchild ’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, induction heating, telecom, ESS and PFC applications where low conduction and


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    FGA30N65SMD PDF

    Untitled

    Abstract: No abstract text available
    Text: FGA30N65SMD 650 V, 30 A Field Stop IGBT Features General Description o • Maximum Junction Temperature : TJ =175 C Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low


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    FGA30N65SMD PDF

    VDE 0660 iec 947-2

    Abstract: gps1bh GE Contactor uimp 8kV SFAL11N GPS1bsah SFVH03 GPAC11LLA GPEF55A ge contactor 0660T
    Text: 39584 GE Consumer & Industrial Power Protection GE Consumer & Industrial Power Protection formerly GE Power Controls , a division of GE Consumer & Industrial, is a first class European supplier of low-voltage products including wiring devices, residential and industrial electrical


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    H-1340 B-9000 C/4601/E/EX VDE 0660 iec 947-2 gps1bh GE Contactor uimp 8kV SFAL11N GPS1bsah SFVH03 GPAC11LLA GPEF55A ge contactor 0660T PDF

    2N6730

    Abstract: 2N6728 SE194 2N6716 7292n 2n 6718 2N6718 SE-194
    Text: Silicon Planar Medium Power Transistors NPN 2N6716 2N6717 2N6718 PNP 2N6728 2N6729 2N6730 FEATURES • High V CE ratin g s up to 1 00 vo lts • Exceptional p o w e r dissip atio n cap a bility - 2 W @ T c a s e = 2 5 °C - 1W @ T amb = 2 5 °C • h FE specified up to 5 0 0 m A


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    2N6716 2N6717 2N6718 2N6728 2N6729 2N6730 SE194 2N6730 SE194 7292n 2n 6718 SE-194 PDF

    0092B

    Abstract: No abstract text available
    Text: MMT75-PNP SILICON MMT76-NPN M IC R O M IN IA T U R E C O M PL EM EN T A R Y SILICO N SW ITCHING AN D A M P L IF IE R T R A N S IS T O R S C O M PLEM EN T A R Y SILICO N A N N U L A R T R A N SIS T O R S . . . designed fo r general-purpose sw itc h in g and am plifier application s


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    MMT75-PNP MMT76-NPN NPN-2N3903, PNP2N3905 0092B PDF

    FS7-16

    Abstract: vf246 VF1000
    Text: PART NUMBERS C R Y S T A L S VFC CRYSTAL STANDARD PART NUMBERS " •, p a ge 16 p a ge 17 C l pF VM 6PN VM 6S PN 0 .0 3 2 7 6 8 12 NC38 NA NA NA 1 13 VF100 VFS100 VFSM 100 VFSM C100 1 .8 4 3 2 VF184 VFS184 VFSM 184 VFSM C 1 84 1 .8 4 3 2 13 VF184A VFS184A


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    VF100 VFS100 VF184 VFS184 VF184A VFS184A VF200A VFS200 VF210 VFS210 FS7-16 vf246 VF1000 PDF

    hep 154 silicon diode

    Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
    Text: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This


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    MY110B Z0206 Z0208 Z0210 Z0211 Z0212 Z0214 Z0215 Z0217 Z0219 hep 154 silicon diode zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp PDF

    2N2222A zetex

    Abstract: MAX715CNG motorola b6n MAX714 MAX715CWG MAX716CWI MAX716EWI MAX714CPE MAX714CWE MAX715
    Text: 1 9 -4 5 0 7 ; R e v . 1; 3 /9 2 B a ttery-P ow ered Supply S y s te m s The M AX716 com bines circuitry for four low-dropout linear regulators, three D C -D C sw itching regulators, and powersu pervisory functions on a single IC. All but one regulator output is logic controlled so that loads m ay be shut down


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    MAX714/715/716 MAX716 inpu40Â MAX716MJI MAX716EVKIT 2N2222A zetex MAX715CNG motorola b6n MAX714 MAX715CWG MAX716CWI MAX716EWI MAX714CPE MAX714CWE MAX715 PDF

    87S96

    Abstract: 74S474 74S475 87S95
    Text: Bipolar ROMs DM 77S95/DM 87S95 4096-B it 512 x 8 Open-Collector ROM DM 77S96/DM 87S96 4096- it (512 x 8) TRI-STATE ROM g en eral d e s c rip tio n fe a tu re s These S c h o ttk y memories are organized in the popular 512 w ords by 8 bits c o n fig u ra tio n . Four m em ory enable


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    DM77S95/DM87S95, 77S96/DM 87S96 77S95/DM 87S95 4096-B 87S96 74S474 74S475 PDF

    0PI3153

    Abstract: 0PI3253 OPI3153 OPI3253
    Text: OPTEK T E CH NO LOG Y Op to e le ctro n ics D iv is io n T R W Electronic Components Group INC ObE D | L 7 TflSfiO 00002 SS 1 9 8 7 C o s t S a v e r P r o d u c t! C a ll T R W fo r m o re in fo rm a tio n ! FVoduct Bulletin 5226 January 1985 7 I r # ? îîr "


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    00002SS OPI3153, 0PI3253 E58730 0PI3153 0PI3253 323-22UU, TU6716U3 OPI3153 OPI3253 PDF

    Untitled

    Abstract: No abstract text available
    Text: Numeric Index Family Specification and General Information Device Data Sheets Package Data This databook contains device specifications for Motorola's ECLinPS advanced ECL logic family. ECLinPS ECL in picoseconds was developed in response to the need for an even higher performance


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    C62460 PDF

    sec 222M se

    Abstract: RKM 24 sm transistor sire db 125 160F 2120R SENSORS TEMPERATURE Pt-100-DIN 43760 long rang TRANSMITTER Fm circuit calibration procedure altek thermocouple simulator 2600 t series pressure transmitter pyro sensor range 20m turbine flowmeter
    Text: ALTEK Altek process calibrators are accurate, rugged, and easy to u s e . . perfect for control room, shop, or field. They save you time on startups and routine calibration, reduce downtime and increase productivity. Simply select, connect, and check. Each calibrator does a specific job. Check milliamp loops; simulate and measure


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    PDF

    Harris CA3046

    Abstract: CA3046 7h0 ITT ICAN-5296
    Text: S E MI CON] SECTOR 4DE D 4302271 J i HARRIS 003220b I HAS CA3045 CA3046 General Purpose N -P-N Transistor Arrays August 1991 fea tu res Description • Two Matched Tran sisto rs: V b ë Matched ±5mV; Input Offset Current 2pA Max at lc = 1mA The CA304S and CA3046 each consist of fivo general


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    003220b CA3045 CA3046 CA304S CA3046 Harris CA3046 7h0 ITT ICAN-5296 PDF

    749 MOSFET TRANSISTOR motorola

    Abstract: 749PC GE DC 300 ADJUSTABLE SPEED DRIVE 4151d MAX749CA MAX749EA zetex 749 MAX749CPA
    Text: 19-0143; Rev 0; 5/93 V M y JX IV M D igitally A djustable LCD Bias Supply _ G eneral D escription .F eatures The MAX749 generates negative LCD-bias contrast voltages from 2V to 6V inputs. Full-scale output voltage can be scaled to -100V or greater, and is d ig ita lly


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    MAX749 -100V 500kHz) 1178mm) 749 MOSFET TRANSISTOR motorola 749PC GE DC 300 ADJUSTABLE SPEED DRIVE 4151d MAX749CA MAX749EA zetex 749 MAX749CPA PDF

    749 MOSFET TRANSISTOR motorola

    Abstract: MAX749CPA
    Text: 19-0143; Rev 1; 2/95 D igitally Adjustable LCD Bias Supply A unique current-limited control scheme reduces supply current and maximizes efficiency, while a high switching frequency up to 500kHz minimizes the size of external components. Quiescent current is only 60|jA max and is


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    500kHz) MAX749 DD1S347 749 MOSFET TRANSISTOR motorola MAX749CPA PDF

    Untitled

    Abstract: No abstract text available
    Text: I II II C •■III R T R ü r S T S E M / C O N O U C T O R CAT28F010 1 Megabit CMOS Flash Memory FEATURES ■ Fast Read Access Time: 90/120/150 ns Commercial and Industrial Temperature Ranges ■ Low Power CMOS Dissipation: -A ctive: 30 mA max CMOS/TTL levels


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    CAT28F010 -32-pin 28F010-15 28F010 PDF

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


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    CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643 PDF

    E355D

    Abstract: mikroelektronik RFT A283D B3370 D100D information applikation B083D SN28654N SN28654 A277D
    Text: ïTTfe Information Applikation Ü b e rsic h t VEB HALBLEITERWERK FRANKFURT ODER âl-< I n r D D G ^ Ö E i s W s n o r i i H IN F O R M A T IO N - A P P L IK A T IO N Bipolare integrierte Schaltkreise des VEB Halbleiterwerk Frankfurt /O d e r H e ft 20


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    PDF

    tle4214 dip-8

    Abstract: siemens essa
    Text: SIEMENS Intelligent Double Low-Side Switch 2 x 0.5 A TLE 4214 B ip olar IC F eatures • D ouble low -side sw itch, 2 x 0.5 A • Pow er lim itation • O v e rte m p era tu re shutdow n • O ve rvo lta g e shutdow n • Status m onitoring • S ho rted -lo a d protection


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    AFT00215 TLE4214 tle4214 dip-8 siemens essa PDF

    triac tic 236

    Abstract: SCR U 537 MP25 transistor transistor su 312 GA1L32 3 pin mini mold transistor 2SJ19 FA114M 2SA1611 Z 103 TRIAC
    Text: TYPE NO. CROSS INDEX T Y P E NO. APPLICATION 8i STRU C TU RE PAGE ANODE COMMON SW ITCHING DIODE MINI MOLD 83 1S2836 ANODE COMMON SW ITCHING DIODE MINI MOLD 83 1S2837 CATHODE COMMON SW ITCHING DIODE MINI MOLD 86 1S2838 CATHODE COMMON SW ITCHING DIODE MINI MOLD


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    1S2835 1S2836 1S2837 1S2838 1SS123 1SS220 1SS221 1SS222 1SS223 2SA811A triac tic 236 SCR U 537 MP25 transistor transistor su 312 GA1L32 3 pin mini mold transistor 2SJ19 FA114M 2SA1611 Z 103 TRIAC PDF

    triac zd 607

    Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
    Text: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni­ cian. The information contained herein is based on an analysis of the published


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    thT404 ZV15A ZY33A ZT696 ZV15B ZY33B ZT697 ZT706 ZV27A ZY62A triac zd 607 hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p PDF