GAN ON SILICON TRANSISTOR Search Results

GAN ON SILICON TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
MGN1S1212MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 12-12V GAN
MGN1S0512MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 5-12V GAN
MGN1S0508MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 5-8V GAN
MGN1D120603MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 12-6/-3V GAN
MGN1D050603MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 5-6/-3V GAN

GAN ON SILICON TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
CGHV1J025D Contextual Info: CGHV1J025D 25 W, 18.0 GHz, GaN HEMT Die Cree’s CGHV1J025D is a high voltage gallium nitride GaN High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 m gate length fabrication process. This GaN-on-SiC product offers superior high	Original	CGHV1J025D CGHV1J025D 18GHz	PDF
Contextual Info: CGHV1J006D 6 W, 18.0 GHz, GaN HEMT Die Cree’s CGHV1J006D is a high voltage gallium nitride GaN High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 m gate length fabrication process. This GaN-on-SiC product offers superior high	Original	CGHV1J006D CGHV1J006D 18GHz	PDF
CGHV1J025D Abstract: G40V4 bonding wire cree Contextual Info: CGHV1J025D 25 W, 18.0 GHz, GaN HEMT Die Cree’s CGHV1J025D is a high voltage gallium nitride GaN High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 m gate length fabrication process. This GaN-on-SiC product offers superior high	Original	CGHV1J025D CGHV1J025D 18GHz High7703 G40V4 bonding wire cree	PDF
CGHV1J006D Abstract: transistor j813 G40V4 hemt .s2p B 1318 191986 high power transistor s-parameters cree gate resistor Contextual Info: CGHV1J006D 6 W, 18.0 GHz, GaN HEMT Die Cree’s CGHV1J006D is a high voltage gallium nitride GaN High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 m gate length fabrication process. This GaN-on-SiC product offers superior high	Original	CGHV1J006D CGHV1J006D 18GHz E7703 transistor j813 G40V4 hemt .s2p B 1318 191986 high power transistor s-parameters cree gate resistor	PDF
CGHV1J025D Contextual Info: CGHV1J025D 25 W, 18.0 GHz, GaN HEMT Die Cree’s CGHV1J025D is a high voltage gallium nitride GaN High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 m gate length fabrication process. This GaN-on-SiC product offers superior high	Original	CGHV1J025D CGHV1J025D 18GHz	PDF
Contextual Info: CGHV1J070D 70 W, 18.0 GHz, GaN HEMT Die Cree’s CGHV1J070D is a high voltage gallium nitride GaN High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 m gate length fabrication process. This GaN-on-SiC product offers superior high frequency, high efficiency features. It is	Original	CGHV1J070D CGHV1J070D 18GHz	PDF
CGHV1J070D Abstract: G40V4 Transistor 17567 Contextual Info: CGHV1J070D 70 W, 18.0 GHz, GaN HEMT Die Cree’s CGHV1J070D is a high voltage gallium nitride GaN High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 m gate length fabrication process. This GaN-on-SiC product offers superior high frequency, high efficiency features. It is	Original	CGHV1J070D CGHV1J070D 18GHz E7703 G40V4 Transistor 17567	PDF
Contextual Info: CGHV96050F1 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96050F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison	Original	CGHV96050F1 50-ohm, CGHV96050F1 CGHV96 050F1	PDF
Contextual Info: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison	Original	CGHV96100F2 50-ohm, CGHV96100F2 CGHV96 100F2	PDF
Contextual Info: CGHV96050F2 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96050F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison	Original	CGHV96050F2 50-ohm, CGHV96050F2	PDF
Contextual Info: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison	Original	CGHV96100F2 50-ohm, CGHV96100F2 CGHV96 100F2	PDF
Contextual Info: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison	Original	CGHV96100F2 50-ohm, CGHV96100F2 CGHV96 100F2	PDF
CGHV96050F2 Abstract: CGHV96 Contextual Info: CGHV96050F2 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96050F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison	Original	CGHV96050F2 50-ohm, CGHV96050F2 CGHV96 050F2	PDF
CGHV96100F2 Contextual Info: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison	Original	CGHV96100F2 50-ohm, CGHV96100F2 CGHV96 100F2	PDF

CGHV96050F2 Contextual Info: CGHV96050F2 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96050F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison	Original	CGHV96050F2 50-ohm, CGHV96050F2 CGHV96 050F2	PDF
Contextual Info: CGHV96100F1 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96100F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison	Original	CGHV96100F1 50-ohm, CGHV96100F1 CGHV96 100F1	PDF
40VPulse Contextual Info: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison	Original	CGHV96100F2 50-ohm, CGHV96100F2 CGHV96 100F2 40VPulse	PDF
Contextual Info: CGHV96050F1 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96050F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison	Original	CGHV96050F1 50-ohm, CGHV96050F1 CGHV96 050F1	PDF
CGHV96100F1 Abstract: taconic Contextual Info: CGHV96100F1 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96100F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison	Original	CGHV96100F1 50-ohm, CGHV96100F1 CGHV96 100F1 taconic	PDF
NPTB00004 Abstract: NPT1012 NPT25015 GaN amplifier 100W Gan on silicon transistor NPTB00025 NPT1007 GaN amplifier NPT1004 Gan on silicon substrate Contextual Info: March 2009 ISO 9001:2000 Worldwide leader in high performance GaN-on-Silicon RF power devices Product Selection Guide Nitronex’s patented Sigantic process combines the superior intrinsic high performance of GaN devices with the reliability and quality of large-area silicon substrates.	Original	NPTB00004 PO150S NPT25015 NPTB00004 NPT1012 NPT25015 GaN amplifier 100W Gan on silicon transistor NPTB00025 NPT1007 GaN amplifier NPT1004 Gan on silicon substrate	PDF
Contextual Info: Part Number: Integra IGN4450M50 TECHNOLOGIES, INC. C-Band Radar Transistor GaN on Silicon Carbide FET  High Power Gain  Excellent Thermal Stability  Gold Metal IGN4450M50 is an internally pre-matched, gallium nitride GaN high electron mobility transistor (HEMT). This part is designed for	Original	IGN4450M50 IGN4450M50 300us IGN4450M50-REV-PR1-DS-REV-D	PDF
Contextual Info: Part Number: Integra IGN2735M250 Preliminary TECHNOLOGIES, INC. S-Band Radar Transistor GaN on Silicon Carbide FET  High Power Gain  Excellent thermal stability  Gold Metal IGN2735M250 is an internally pre-matched, gallium nitride (GaN) high electron mobility transistor (HEMT). This part is designed for	Original	IGN2735M250 IGN2735M250 300us IGN2735M250-REV-PR1-DS-REV-A	PDF
Contextual Info: Part Number: Integra IGN5459M40 Preliminary TECHNOLOGIES, INC. C-Band Radar Transistor GaN on Silicon Carbide FET  High Power Gain  Excellent thermal stability  Gold Metal IGN5459M40 is an internally pre-matched, gallium nitride (GaN) high electron mobility transistor (HEMT). This part is designed for	Original	IGN5459M40 IGN5459M40 300us IGN5459M40-REV-PR1-DS-REV-B	PDF
RF3931 Abstract: Gan on silicon transistor GaN TRANSISTOR RFMD HEMT GaN SiC EAR99 Gan on silicon Gan hemt transistor RFMD Contextual Info: Most Valuable Product The FirsT in a Family oF VersaTile high Power gan TransisTors R 40 FMD has developed a portfolio of Gallium Nitride GaN on Silicon Carbide (SiC) high power amplifiers and just recently released the first product from a family of discrete unmatched power transistors. The	Original	RF3931 Gan on silicon transistor GaN TRANSISTOR RFMD HEMT GaN SiC EAR99 Gan on silicon Gan hemt transistor RFMD	PDF

GAN ON SILICON TRANSISTOR Search Results

GAN ON SILICON TRANSISTOR Result Highlights (5)

GAN ON SILICON TRANSISTOR Datasheets Context Search

CGHV1J025D

CGHV1J025D

CGHV1J006D

CGHV1J025D

CGHV1J070D

CGHV96050F2

CGHV96100F2

CGHV96050F2

40VPulse

CGHV96100F1

NPTB00004

RF3931