G40V4 Search Results

G40V4 Price and Stock

Filter by Manufacturer


Mersen Electrical Power D02GG40V40 Fuse: fuse; 40A; 400VAC; 250VDC; gG; industrial; D02
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	D02GG40V40		50		1	1 $2.47 10 $1.92 100 $1.58 1000 $1.58 10000 $1.58	Buy Now

G40V4 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
CGHV1J025D Abstract: G40V4 bonding wire cree Contextual Info: CGHV1J025D 25 W, 18.0 GHz, GaN HEMT Die Cree’s CGHV1J025D is a high voltage gallium nitride GaN High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 m gate length fabrication process. This GaN-on-SiC product offers superior high	Original	CGHV1J025D CGHV1J025D 18GHz High7703 G40V4 bonding wire cree	PDF
CGHV1J006D Abstract: transistor j813 G40V4 hemt .s2p B 1318 191986 high power transistor s-parameters cree gate resistor Contextual Info: CGHV1J006D 6 W, 18.0 GHz, GaN HEMT Die Cree’s CGHV1J006D is a high voltage gallium nitride GaN High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 m gate length fabrication process. This GaN-on-SiC product offers superior high	Original	CGHV1J006D CGHV1J006D 18GHz E7703 transistor j813 G40V4 hemt .s2p B 1318 191986 high power transistor s-parameters cree gate resistor	PDF
CGHV1J025D Contextual Info: CGHV1J025D 25 W, 18.0 GHz, GaN HEMT Die Cree’s CGHV1J025D is a high voltage gallium nitride GaN High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 m gate length fabrication process. This GaN-on-SiC product offers superior high	Original	CGHV1J025D CGHV1J025D 18GHz	PDF
Contextual Info: CGHV1J006D 6 W, 18.0 GHz, GaN HEMT Die Cree’s CGHV1J006D is a high voltage gallium nitride GaN High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 m gate length fabrication process. This GaN-on-SiC product offers superior high	Original	CGHV1J006D CGHV1J006D 18GHz	PDF
Contextual Info: CGHV1J070D 70 W, 18.0 GHz, GaN HEMT Die Cree’s CGHV1J070D is a high voltage gallium nitride GaN High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 m gate length fabrication process. This GaN-on-SiC product offers superior high frequency, high efficiency features. It is	Original	CGHV1J070D CGHV1J070D 18GHz	PDF
CGHV1J025D Contextual Info: CGHV1J025D 25 W, 18.0 GHz, GaN HEMT Die Cree’s CGHV1J025D is a high voltage gallium nitride GaN High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 m gate length fabrication process. This GaN-on-SiC product offers superior high	Original	CGHV1J025D CGHV1J025D 18GHz	PDF
CGHV1J070D Abstract: G40V4 Transistor 17567 Contextual Info: CGHV1J070D 70 W, 18.0 GHz, GaN HEMT Die Cree’s CGHV1J070D is a high voltage gallium nitride GaN High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 m gate length fabrication process. This GaN-on-SiC product offers superior high frequency, high efficiency features. It is	Original	CGHV1J070D CGHV1J070D 18GHz E7703 G40V4 Transistor 17567	PDF