CGHV96100F1 Search Results
CGHV96100F1 Datasheets Context Search
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Contextual Info: CGHV96100F1 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96100F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison |
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CGHV96100F1 50-ohm, CGHV96100F1 CGHV96 100F1 | |
CGHV96100F1
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CGHV96100F1 50-ohm, CGHV96100F1 CGHV96 100F1 taconic |