Untitled
Abstract: No abstract text available
Text: TSUS4400 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs Description TSUS4400 is an infrared emitting diode in standard GaAs on GaAs technology, molded in a clear, blue tinted plastic package. The device is spectrally matched to silicon photodetectors.
|
Original
|
TSUS4400
TSUS4400
2002/95/EC
2002/96/EC
08-Apr-05
|
PDF
|
TSUS4400
Abstract: No abstract text available
Text: TSUS4400 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs Description TSUS4400 is an infrared emitting diode in standard GaAs on GaAs technology, molded in a clear, blue tinted plastic package. The device is spectrally matched to silicon photodetectors.
|
Original
|
TSUS4400
TSUS4400
2002/95/EC
2002/96/EC
08-Apr-05
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TSUS4400 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs Description TSUS4400 is an infrared emitting diode in standard GaAs on GaAs technology, molded in a clear, blue tinted plastic package. The device is spectrally matched to silicon photodetectors.
|
Original
|
TSUS4400
TSUS4400
2002/95/EC
2002/96/EC
D-74025
08-Mar-05
|
PDF
|
Application NOTES TSAL4400
Abstract: APPLICATION CIRCUIT OF TSAL4400 TSAL4400
Text: TSAL4400 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL4400 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve about 100 % radiant
|
Original
|
TSAL4400
TSAL4400
08-Apr-05
Application NOTES TSAL4400
APPLICATION CIRCUIT OF TSAL4400
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TSAL4400 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL4400 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve about 100 % radiant
|
Original
|
TSAL4400
TSAL4400
D-74025
08-Mar-05
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TSAL4400 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL4400 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve about 100 % radiant
|
Original
|
TSAL4400
TSAL4400
18-Jul-08
|
PDF
|
Application NOTES TSAL4400
Abstract: TSAL4400
Text: TSAL4400 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL4400 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve about 100 % radiant
|
Original
|
TSAL4400
TSAL4400
08-Apr-05
Application NOTES TSAL4400
|
PDF
|
TSUS4300
Abstract: No abstract text available
Text: TSUS4300 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs Description TSUS4300 is an infrared emitting diode in standard GaAs on GaAs technology, molded in a clear, blue tinted plastic package. Its lens provides a high radiant intensity without external optics.
|
Original
|
TSUS4300
TSUS4300
2002/95/EC
2002/96/EC
08-Apr-05
|
PDF
|
TSUS4300
Abstract: No abstract text available
Text: TSUS4300 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs Description TSUS4300 is an infrared emitting diode in standard GaAs on GaAs technology, molded in a clear, blue tinted plastic package. Its lens provides a high radiant intensity without external optics.
|
Original
|
TSUS4300
TSUS4300
2002/95/EC
2002/96/EC
D-74025
08-Mar-05
|
PDF
|
k 7947 e
Abstract: TSUS4300
Text: TSUS4300 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs Description TSUS4300 is an infrared emitting diode in standard GaAs on GaAs technology, molded in a clear, blue tinted plastic package. Its lens provides a high radiant intensity without external optics.
|
Original
|
TSUS4300
TSUS4300
2002/95/EC
2002/96/EC
08-Apr-05
k 7947 e
|
PDF
|
TSAL7400
Abstract: No abstract text available
Text: TSAL7400 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL7400 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength.
|
Original
|
TSAL7400
TSAL7400
08-Apr-05
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TSAL7600 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL7600 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength.
|
Original
|
TSAL7600
TSAL7600
18-Jul-08
|
PDF
|
TSAL7300
Abstract: No abstract text available
Text: TSAL7300 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL7300 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength.
|
Original
|
TSAL7300
TSAL7300
08-Apr-05
|
PDF
|
TSAL7400
Abstract: No abstract text available
Text: TSAL7400 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL7400 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength.
|
Original
|
TSAL7400
TSAL7400
D-74025
08-Mar-05
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: TSAL7400 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL7400 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength.
|
Original
|
TSAL7400
TSAL7400
08-Apr-05
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TSAL7300 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL7300 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength.
|
Original
|
TSAL7300
TSAL7300
08-Apr-05
|
PDF
|
TSAL7600
Abstract: No abstract text available
Text: TSAL7600 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL7600 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength.
|
Original
|
TSAL7600
TSAL7600
08-Apr-05
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TSAL5100 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL5100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength.
|
Original
|
TSAL5100
TSAL5100
08-Apr-05
|
PDF
|
TEST2600
Abstract: TSSS2600
Text: TSSS2600 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs Description TSSS2600 is a miniature infrared emitting diode in GaAs on GaAs technology, molded in a clear, untinted plastic package with cylindrical side view lens. The device is spectrally matched to silicon photodiodes and phototransistors.
|
Original
|
TSSS2600
TSSS2600
2002/95/EC
08-Apr-05
TEST2600
|
PDF
|
TSAL6100
Abstract: TSAL6100 application
Text: TSAL6100 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL6100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength.
|
Original
|
TSAL6100
TSAL6100
08-Apr-05
TSAL6100 application
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TSAL6400 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL6400 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength.
|
Original
|
TSAL6400
TSAL6400
08-Apr-05
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TSAL7200 VISHAY Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL7200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in a clear plastic package. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength.
|
Original
|
TSAL7200
TSAL7200
08-Apr-05
|
PDF
|
TSAL7600
Abstract: No abstract text available
Text: TSAL7600 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1¾ Package Description TSAL7600 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear plastic packages. In comparison with the standard GaAs on GaAs
|
Original
|
TSAL7600
TSAL7600
D-74025
20-May-99
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TSAL5100 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL5100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength.
|
Original
|
TSAL5100
TSAL5100
18-Jul-08
|
PDF
|
