TSAL4400 Search Results
TSAL4400 Price and Stock
Vishay Semiconductors TSAL4400EMITTER IR 940NM 100MA RADIAL |
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TSAL4400 | Bulk | 1 |
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Vishay Intertechnologies TSAL4400IR EMITTER HIGH POWR 950NM 3MM 25DEG-e2 - Bulk (Alt: TSAL4400) |
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TSAL4400 | Bulk | 10,000 | 10 Weeks | 5,000 |
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TSAL4400 | 15,502 |
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TSAL4400 | 34,825 | 260 |
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TSAL4400 | 25,472 | 10 Weeks | 1 |
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TSAL4400 | Bulk | 35,928 | 1 |
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TSAL4400 | Bag | 3,581 | 10 Weeks | 1 |
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TSAL4400 | 2,342 |
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TSAL4400 | 920 |
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TSAL4400 | Bulk | 3,000 | 1,000 |
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TSAL4400 | 7,096 | 1 |
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TSAL4400 | 33 |
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TSAL4400 | 30,999 |
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TSAL4400 | 12 Weeks | 5,000 |
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TSAL4400 | Bulk | 34,825 | 0 Weeks, 1 Days | 5 |
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TSAL4400 | 11 Weeks | 5,000 |
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TSAL4400 | 6,000 | 1 |
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Vishay Intertechnologies TSAL4400-CS12IR EMITTER HIGH POWR 950NM 3MM 25DEG-e2 - Bulk (Alt: TSAL4400-CS12) |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TSAL4400-CS12 | Bulk | 10 Weeks | 10,000 |
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TSAL4400-CS12 | 11 Weeks | 2,000 |
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Vishay Intertechnologies TEFD4300FPhotodiodes T-1 770 to 1070nm +/-20 deg |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TEFD4300F | 7,505 |
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TEFD4300F | Reel | 10,000 | 5,000 |
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Vishay Intertechnologies TEFD4300Photodiodes T-1 350 to 1120nm +/-20 deg |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TEFD4300 | 4,977 |
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TEFD4300 | Reel | 5,000 |
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TSAL4400 Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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TSAL4400 | Vishay Intertechnology | GaAs/GaAlAs IR Emitting Diode in diam 3 mm (T-1) Package | Original |
TSAL4400 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Tem ic TSAL4400 S e m i c o n d u c t o r s GaAs/GaAlAs IR Emitting Diode in 0 3 mm T -l Package Description TSAL4400 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technol |
OCR Scan |
TSAL4400 TSAL4400 D-74025 04-Mar-98 | |
Contextual Info: TSAL4400 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • • • • • • • • • • • • • 94 8636 DESCRIPTION Package type: leaded Package form: T-1 Dimensions in mm : Ø 3 Peak wavelength: λp = 940 nm |
Original |
TSAL4400 TEFT4300 2002/95/EC 2002/96/EC TSAL4400 11-Mar-11 | |
TSAL4400Contextual Info: TSAL4400 Vishay Semiconductors GaAs/GaAlAs IR Emitting Diode in ø 3 mm T–1 Package Description 94 8488 TSAL4400 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs |
Original |
TSAL4400 TSAL4400 D-74025 20-May-99 | |
TSAL4400Contextual Info: TSAL4400 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø 3 mm T–1 Package Description 94 8488 TSAL4400 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs |
Original |
TSAL4400 TSAL4400 D-74025 20-May-99 | |
Contextual Info: TSAL4400 Vishay Semiconductors High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : ∅ 3 • Peak wavelength: λp = 940 nm • High reliability • High radiant power |
Original |
TSAL4400 TSAL4400 TEFT4300 2002/95/EC 2002/96/EC 11-Mar-11 | |
Contextual Info: TSAL4400 VISHAY Vishay Semiconductors GaAs/GaAlAs IR Emitting Diode in ∅ 3 mm T-1 Package Description TSAL4400 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve about 100 % radiant |
Original |
TSAL4400 TSAL4400 D-74025 05-May-04 | |
Contextual Info: TSAL4400 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL4400 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve about 100 % radiant |
Original |
TSAL4400 TSAL4400 D-74025 08-Mar-05 | |
TSAL4400
Abstract: APPLICATION CIRCUIT OF TSAL4400 Application NOTES TSAL4400 TEFT4300 high power infrared led
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TSAL4400 TEFT4300 TSAL4400 2002/95/EC 2002/96/EC 18-Jul-08 APPLICATION CIRCUIT OF TSAL4400 Application NOTES TSAL4400 TEFT4300 high power infrared led | |
Contextual Info: TSAL4400 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • • • • • • • • • • • • • 94 8636 DESCRIPTION Package type: leaded Package form: T-1 Dimensions in mm : Ø 3 Peak wavelength: λp = 940 nm |
Original |
TSAL4400 TEFT4300 2002/95/EC 2002/96/EC TSAL4400 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 | |
Contextual Info: TSAL4400 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • • • • • • • • • • • • • 94 8636 DESCRIPTION Package type: leaded Package form: T-1 Dimensions in mm : Ø 3 Peak wavelength: λp = 940 nm |
Original |
TSAL4400 TEFT4300 2002/95/EC 2002/96/EC TSAL4400 2002/95/EC. 2011/65/EU. JS709A | |
Application NOTES TSAL4400
Abstract: APPLICATION CIRCUIT OF TSAL4400 TSAL4400
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TSAL4400 TSAL4400 08-Apr-05 Application NOTES TSAL4400 APPLICATION CIRCUIT OF TSAL4400 | |
TSAL4400Contextual Info: TSAL4400 VISHAY Vishay Semiconductors GaAs/GaAlAs IR Emitting Diode in ∅ 3 mm T-1 Package Description TSAL4400 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve about 100 % radiant |
Original |
TSAL4400 TSAL4400 D-74025 24-Jun-03 | |
Contextual Info: TSAL4400 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø 3 mm T–1 Package Description 94 8488 TSAL4400 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs |
Original |
TSAL4400 TSAL4400 D-74025 20-May-99 | |
Contextual Info: TSAL4400 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • • • • • • • • • • • • • 94 8636 DESCRIPTION Package type: leaded Package form: T-1 Dimensions in mm : Ø 3 Peak wavelength: λp = 940 nm |
Original |
TSAL4400 TEFT4300 2002/95/EC 2002/96/EC TSAL4400 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 | |
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Application NOTES TSAL4400
Abstract: TSAL4400
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TSAL4400 TSAL4400 08-Apr-05 Application NOTES TSAL4400 | |
TSAL4400Contextual Info: TSAL4400 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø 3 mm T–1 Package Description 94 8488 TSAL4400 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs |
Original |
TSAL4400 TSAL4400 D-74025 20-May-99 | |
Contextual Info: TSAL4400 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : Ø 3 • Peak wavelength: λp = 940 nm • High reliability • High radiant power |
Original |
TSAL4400 TEFT4300 TSAL4400 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: TSAL4400 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL4400 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve about 100 % radiant |
Original |
TSAL4400 TSAL4400 18-Jul-08 | |
TEFD4300
Abstract: APPLICATION CIRCUIT OF TSAL4400
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Original |
TEFD4300 VSLB3940, TSUS4300, TSAL4400 2002/95/EC 2002/96/EC TEFD4300 2011/65/EU 2002/95/EC. APPLICATION CIRCUIT OF TSAL4400 | |
sharp laser diodes
Abstract: TSOP855
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vse-db0090-1010 sharp laser diodes TSOP855 | |
TSSP4038Contextual Info: V i s h ay I nte r tec h nolog y, I nc . OPTOELECTRONICS Optoelectronics – Products for Industrial Applications Guide to Industrial Applications TABLE OF CONTENTS Introduction. 2 |
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VMN-MS6520-1311 TSSP4038 | |
Contextual Info: TEFT4300 www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : Ø 3 • High radiant sensitivity • Daylight blocking filter matched with 940 nm emitters • Fast response times |
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TEFT4300 TSUS4300 TSAL4400 2002/95/EC 2002/96/EC TEFT4300 2002/95/EC. 2011/65/EU. JS709A | |
A 69157 scr
Abstract: 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC hcpl788 hcpl 1360 HEDS 8210 83K3
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90F8548 SDP8600-001 95F5325 SDP8371-001 28H5849 28H5850 OPB933W55Z 08F2750 OPB963T55 08F2755 A 69157 scr 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC hcpl788 hcpl 1360 HEDS 8210 83K3 | |
Infrared emitter
Abstract: "Photo Interrupter" TSAL4400 "Photo Interrupter" Application Note APPLICATION CIRCUIT OF TSAL4400 smd diode DH TSHA4400 TSKS5400 TSMF3700 TSML3710
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22-Apr-04 Infrared emitter "Photo Interrupter" TSAL4400 "Photo Interrupter" Application Note APPLICATION CIRCUIT OF TSAL4400 smd diode DH TSHA4400 TSKS5400 TSMF3700 TSML3710 |