GA MOSFET Search Results

Contextual Info: PRODUCT Æ utTon CÁTALO' N-CHANNEL ENHANCEMENT MOS FET 50 0V, 24A, 0.25Q SDF24N50 GAF FEATURES • • • • • • • • SCHEMATIC GH D ra in -s ou rc e Vo 1t . 1 D r ai n- Ga te Voltage G GATE DRAIN 3 SO U R C E STANDARD BEND CONFIGURATIONS (1) Ga te - So ur ce Voltage

Contextual Info: 2N7635-GA Normally – OFF Silicon Carbide Junction Transistor Features Package •           RoHS Compliant 225°C maximum operating temperature Electrically Isolated Base Plate Gate Oxide Free SiC Switch Exceptional Safe Operating Area

Contextual Info: 2N7636-GA Normally – OFF Silicon Carbide Junction Transistor Features Package •           RoHS Compliant 225°C maximum operating temperature Electrically Isolated Base Plate Gate Oxide Free SiC Switch Exceptional Safe Operating Area

SDF440

Contextual Info: Æ iitro n PRODUCT DEVICES.INC. ATÂl©' N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Drain-source Volt. l Dra in-Ga te Vo 11age (RGS=1.0Mn) (1) Gate-Source Voltage Continuous Drain Current Continuous (Tc = 25°C) Drain Current Pulsed(3)

SDF240

Contextual Info: Ætttron PRODUCT DEVICES.INC. CATALO' N-CHANNEL ENHANCEMENT MOS FET 200V, ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL UNITS Drain-source Volt. l Dra in-Ga te Vo 11age (R g s = 1.OMn) (1) Gote-Source Voltage Con t inuous Drain Current Continuous (Tc = 2 5 “C)

Contextual Info: Æ litro n PRODUCT DEVICES.INC. 330] ELECTRONICS WAY. WEST PALM BEACH. FLORIDA 33-107 TEL: 407 848-4311 FAX: (407) 863-5946 N-CHANNEL ENHANCEMENT MOS FET 500V, 2.5A, 3. On ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL UNITS Drain-source Vo 1t .(1) Dra in-Ga te Vo 1tage

Contextual Info: Æwtran PRODUCT DEVICES.INC. 3301 ELECTRONICS WAY. WEST PALM BEACH, FLORIDA 33407 TEL: 407 848-4311 FAX: (407) 863-5946 N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER 200V, SYMBOL UNITS Drain-source Vo 1t .(1) Dra in -Ga te Vo 1tage (Rgs = 1•O M n ) Cl)

mosfet fs series

Contextual Info: ILOW VOLTAGE POWER MOSFET FS SERIES 10V DRIVE Electrical characteristics (TYP.) Max, «fin ga Package Typo No. Voss (V) •k FS10U M -0 3 ★ FS1O V5-03 •k m m Vgss (V) fusioni W D TYP. MAX. V«S(M C iss M P-3 20 10 FS10KM -O 3 ±20 72 95 280 15 FS 3 0 A S-0 3

ta9770

Abstract: transistor buz71a BUZ71A TB334 cip soa rl
Contextual Info: BUZ71A Semiconductor June 1999 Data Sheet 13A, 50 V, 0.120 Ohm, N-Channel Power MOSFET File Number 2419.2 Features • 13A, 50V T his is an N -C hannel e n h a n ce m e n t m ode silicon ga te pow er field effect tra n sisto r de sig n e d for ap plicatio ns such as

DS25-.A

Abstract: GA mosfet
Contextual Info: Ætotxan PRODUCT DEVICES.INC. 3301 ELECTRONICS WAY. WEST PALM BEACH, FLORIDA 33407 TEL: 407 040-4311 FAX: (407) 863-5946 N-CHANNEL ENHANCEMENT MÜS FET 200V, ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Drain-source Volt.(l) VDSS Dra in-Ga te Vo 1tage VDGR (R gs = 1 -O M n ) (1)

Contextual Info: 2N7639-GA Normally – OFF Silicon Carbide Junction Transistor VDS = 600 V RDS ON = 60 mΩ ID (Tc = 25°C) = 32 A hFE (Tc = 25°C) = Features Package •           RoHS Compliant 225°C maximum operating temperature Electrically Isolated Base Plate

Contextual Info: 2N7638-GA Normally – OFF Silicon Carbide Junction Transistor VDS = 600 V RDS ON = 170 mΩ ID (Tc = 25°C) = 20 A hFE (Tc = 25°C) = Features Package •           RoHS Compliant 225°C maximum operating temperature Electrically Isolated Base Plate

2n2222 spice model

Contextual Info: 2N7637-GA Normally – OFF Silicon Carbide Junction Transistor VDS = 600 V RDS ON = 170 mΩ ID (Tc = 25°C) = 20 A hFE (Tc = 25°C) = Features Package •           RoHS Compliant 225°C maximum operating temperature Electrically Isolated Base Plate

SD10425

Abstract: diode GF
Contextual Info: Æ w t x a n PRODUCT CATÂLO' DEVI C E S . I N C . N-CHANNEL ENHANCEMENT MOS FET 1000V, 2.0A, 6. On ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER Drain-source Volt. l Dra in-Ga te Vo Itage (RGs=1.0Mn) (1) Gate-Source Voltage Cont inuous Drain Current Continuous

Contextual Info: BSS138W 50V N-Channel Enhancement Mode MOSFET - ESD Protected • Maximum Ratings and Thermal Characteristics TA=25OC unless otherwise noted PA RA M E TE R S ym b o l L i mi t Uni ts D r a i n- S o ur c e Vo lta g e V DS 50 V Ga te - S o ur c e Vo lta g e

D8P05

Abstract: rfp8p05 625Q TA09832
Contextual Info: inteikSI RFD8P05, RFD8P05SM, RFP8P05 D ata S heet J u ly 1999 BA, 50V, 0.300 Ohm, P-Channel Power MOSFETs File N u m b e r 23 84.2 Features • 8A, 5 0V T h e se products are P -C hannel pow e r M O S F E Ts m anufactured using th e M e ga F E T process. This process,

Contextual Info: SN NN01Z Z10Q Q Logic Le evel N-Ch Po ower MOSFE ET L Logic Le evel Ga ate Drive App plicatio on Fe eatures • Logic levell gate drive e • Max. RDS ONN = 0.24Ω at VGS = 10V, ID = 0.5A • Low RDS(on) provides hiigher efficie ency • ESD proteccted: 2000V

SNN01Z10

Contextual Info: SN NN01Z Z10Q Q Logic Le evel N-Ch Po ower MOSFE ET L Logic Le evel Ga ate Drive App plicatio on Fe eatures • Logic levell gate drive e • Max. RDS ONN = 0.24Ω at VGS = 10V, ID = 0.5A • Low RDS(on) provides hiigher efficie ency • ESD proteccted: 2000V

Contextual Info: ^ ¡ » l i t r o n d e v i c e s . , NC. _ PRODUCT CATALOG N-CHANNEL ENHANCEMENT MOS FET 2 0 0 V , 5 0 A, 0.05 1 ABSOLUTE MAXIMUM RATINGS PARAMETER Dr ain-source Vo It . 1 Dra in-Ga te Vo 1 tage (RGS-l.OMn) UNITS SYMBOL (1) Gate-Source Voltage

ZXTN26020DMF

Abstract: DFN1411-3 ZXTN26020DMFTA MARKING Z1
Contextual Info: A Product Line of Diodes Incorporated ZXTN26020DMF H IGH GA IN , L OW V C E S A T N P N B I PO LAR TR ANSI S TOR Features Mechanical Data • • • • • • • • • • • High Gain Low Vcesat NPN transistor Very Low Rcesat High ICM capability

Contextual Info: Æ w t x a n PRODUCT CATÂLO' DEVI C E S . I N C . N -CH AN N EL ENHANCEMENT MOS F E T 1000V, 2.0A, 6. On ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER Drain-source Volt. l Dra in-Ga te Vo Itage (RGs=1.0Mn) (1) Gate-Source Voltage Cont inuous Drain Current Continuous

mj122

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M T P 9N 25E TM O S E -FE T ™ P o w er Field E ffe c t Tran sisto r M otorola Preferred Device N-Channel Enhancement-Mode Silicon Ga te This advanced TM OS E -F E T is designed to w ithstand high

Contextual Info: A Product Line of Diodes Incorporated ZXTN26020DMF H IGH GA IN , L OW V C E S A T N P N B I PO LAR TR ANSI S TOR Features Mechanical Data • • • • • • • • • • • High Gain Low Vcesat NPN transistor Very Low Rcesat High ICM capability

Contextual Info: SN NN01Z Z60Q Q Logic Le evel N-Ch Po ower MOSFE ET L Logic Le evel Ga ate Drive App plicatio on Fe eatures • Logic levell gate drive e • Max. RDS ONN = 135mΩ at a VGS = 10V V, ID = 0.5A • Low RDS(on) provides hiigher efficie ency • ESD proteccted: 1000V