SNN01Z Search Results

Contextual Info: SNN01Z10D Logic Level N-Ch Power MOSFET Logic Level Gate Drive Application Features • Logic level gate drive  Max. RDS ON = 0.24 at VGS = 10V, ID = 0.5A  Low RDS(on) provides higher efficiency  ESD protected: 2000V (HBM ±1000V)  Halogen free and RoHS compliant device

Contextual Info: SN NN01Z Z10Q Q Logic Le evel N-Ch Po ower MOSFE ET L Logic Le evel Ga ate Drive App plicatio on Fe eatures • Logic levell gate drive e • Max. RDS ONN = 0.24Ω at VGS = 10V, ID = 0.5A • Low RDS(on) provides hiigher efficie ency • ESD proteccted: 2000V

Contextual Info: SN NN01Z Z60Q Q Logic Le evel N-Ch Po ower MOSFE ET L Logic Le evel Ga ate Drive App plicatio on Fe eatures • Logic levell gate drive e • Max. RDS ONN = 135mΩ at a VGS = 10V V, ID = 0.5A • Low RDS(on) provides hiigher efficie ency • ESD proteccted: 1000V

S78DM12Q

Abstract: Sf20d400 s78dM12 BA5810 sn7905 SF5A400 transistor AE code PNP smd sf20a300 SF10A300 SF10D300
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Contextual Info: SN NN01Z Z60Q Q Logic Le evel N-Ch Po ower MOSFE ET L Logic Le evel Ga ate Drive App plicatio on Fe eatures • Logic levell gate drive e • Max. RDS ONN = 135mΩ at a VGS = 10V V, ID = 0.5A • Low RDS(on) provides hiigher efficie ency • ESD proteccted: 1000V

SNN01Z10

Contextual Info: SN NN01Z Z10Q Q Logic Le evel N-Ch Po ower MOSFE ET L Logic Le evel Ga ate Drive App plicatio on Fe eatures • Logic levell gate drive e • Max. RDS ONN = 0.24Ω at VGS = 10V, ID = 0.5A • Low RDS(on) provides hiigher efficie ency • ESD proteccted: 2000V