SDF220 Search Results

Contextual Info: SDF220JABXHSN Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)5.0# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)20 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)50 Minimum Operating Temp (øC)-55

Contextual Info: SDF220JAAXHD1N Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)5.0# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)20 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)50 Minimum Operating Temp (øC)-55

DS25-.A

Abstract: GA mosfet
Contextual Info: Ætotxan PRODUCT DEVICES.INC. 3301 ELECTRONICS WAY. WEST PALM BEACH, FLORIDA 33407 TEL: 407 040-4311 FAX: (407) 863-5946 N-CHANNEL ENHANCEMENT MÜS FET 200V, ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Drain-source Volt.(l) VDSS Dra in-Ga te Vo 1tage VDGR (R gs = 1 -O M n ) (1)

Contextual Info: Æwtran PRODUCT DEVICES.INC. 3301 ELECTRONICS WAY. WEST PALM BEACH, FLORIDA 33407 TEL: 407 848-4311 FAX: (407) 863-5946 N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER 200V, SYMBOL UNITS Drain-source Vo 1t .(1) Dra in -Ga te Vo 1tage (Rgs = 1•O M n ) Cl)

SDF220

Contextual Info: Æ iitron PRODUCT DEVICES.INC. N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER 200V, SYMBOL Drain-source Volt. l VDSS Dra in-Gate Vo 1tage VDGR (R gs = 1•OMn) (1) Gate-Source Voltage VGS Cont inuous Drain Current Continuous ID (Tc = 25°C)