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G30N120CN Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
G30N120CN		Fairchild Semiconductor	75A, 1200V, NPT Series N-Channel IGBT		Original	PDF

G30N120CN Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
G30N120CN Abstract: HGTG30N120CN LD26 RHRP30120 Text: G30N120CN Data Sheet January 2000 75A, 1200V, NPT Series N-Channel IGBT Features The G30N120CN is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device	Original	PDF	HGTG30N120CN HGTG30N120CN 350ns 150oC G30N120CN LD26 RHRP30120
HGTG30N120CN Abstract: RHRP30120 G30N120CN LD26 igbt 1200v 150a Text: G30N120CN Data Sheet January 2000 75A, 1200V, NPT Series N-Channel IGBT Features The G30N120CN is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device	Original	PDF	HGTG30N120CN HGTG30N120CN 350ns 150oC RHRP30120 G30N120CN LD26 igbt 1200v 150a
65e9 transistor Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 \| \| ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12	Original	PDF	1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
G30N120CN Abstract: MOSFET 1200v 30a HGTG30N120CN LD26 RHRP30120 Text: G30N120CN Data Sheet December 2001 75A, 1200V, NPT Series N-Channel IGBT Features The G30N120CN is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device	Original	PDF	HGTG30N120CN HGTG30N120CN 350ns 150oC G30N120CN MOSFET 1200v 30a LD26 RHRP30120