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    G20N60C3 Search Results

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    G20N60C3 Price and Stock

    Rochester Electronics LLC HGTG20N60C3R

    40A, 600V, RUGGED N-CHANNEL IGBT
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    DigiKey HGTG20N60C3R Bulk 123
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    onsemi HGTG20N60C3D

    IGBT 600V 45A 164W TO247
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    DigiKey HGTG20N60C3D Tube
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    Newark HGTG20N60C3D Bulk 300
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    Harris Semiconductor HGTG20N60C3R

    40A, 600V, RUGGED UFS SERIES N-Channel IGBT '
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    Rochester Electronics HGTG20N60C3R 4,575 1
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    HARTING Technology Group HGTG20N60C3R

    40A, 600V, RUGGED UFS SERIES N-CHANNEL IGBT Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247
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    ComSIT USA HGTG20N60C3R 176
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    G20N60C3 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    G20N60C3 Fairchild Semiconductor 45A, 600V, UFS Series N-Channel IGBT Original PDF

    G20N60C3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    g20n60

    Abstract: HGT1S20N60C3S9A G20N60C3 HGT1S20N60C3S HGTG20N60C3 HGTP20N60C3 RHRP3060 TA49178 TB334 ic2545a
    Text: G20N60C3, HGTP20N60C3, HGT1S20N60C3S Data Sheet December 2001 45A, 600V, UFS Series N-Channel IGBT Features This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of


    Original     		PDF HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S 150oC. 108ns 150oC g20n60 HGT1S20N60C3S9A G20N60C3 HGT1S20N60C3S HGTG20N60C3 HGTP20N60C3 RHRP3060 TA49178 TB334 ic2545a

    g20n60c3d

    Abstract: g20n60c3d equivalent HGTG20N60C3D LD26 RHRP3060 TA49063 TA49178 g20n60 HGTG20N60C3
    Text: G20N60C3D Data Sheet January 2000 45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The G20N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input


    Original     		PDF HGTG20N60C3D HGTG20N60C3D 150oC. TA49178. RHRP3060 TA49063) g20n60c3d g20n60c3d equivalent LD26 RHRP3060 TA49063 TA49178 g20n60 HGTG20N60C3

    Untitled

    Abstract: No abstract text available
    Text: HGT1S20N60C3S9A Data Sheet August 2003 45A, 600V, UFS Series N-Channel IGBT Features This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


    Original     		PDF HGT1S20N60C3S9A 150oC. TA49178.

    G20N60C3D

    Abstract: HGTG20N60C3D RHRP3060 TA49063 TA49178 TA49179
    Text: G20N60C3D Data Sheet January 2000 45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The G20N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input


    Original     		PDF HGTG20N60C3D HGTG20N60C3D 150oC. TA49178. RHRP3060 TA49063) G20N60C3D RHRP3060 TA49063 TA49178 TA49179

    HGT1S20N60C3S9A

    Abstract: G20N60C3 HGTG20N60C3 equivalent HGT1S20N60C3S TA49178 HGTG20N60C3 HGTP20N60C3 RHRP3060 TB334 igbt g20n60c3
    Text: G20N60C3, HGTP20N60C3, HGT1S20N60C3S Data Sheet January 2000 45A, 600V, UFS Series N-Channel IGBT Features This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of


    Original     		PDF HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S 150oC. 108ns 150oC HGT1S20N60C3S9A G20N60C3 HGTG20N60C3 equivalent HGT1S20N60C3S TA49178 HGTG20N60C3 HGTP20N60C3 RHRP3060 TB334 igbt g20n60c3

    V30016

    Abstract: No abstract text available
    Text: G20N60C3, HGTP20N60C3, HGT1S20N60C3, HGT1S20N60C3S Data Sheet May 1999 45A, 600V, UFS Series N-Channel IGBT Features This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of


    Original     		PDF HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3, HGT1S20N60C3S 150oC. TA49178. V30016

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note

    g20n60

    Abstract: HGT1S20N60C3S9A HGT1S20N60C3S G20N60C3 HGTG20N60C3 HGTP20N60C3 TA49178 TB334
    Text: G20N60C3, HGTP20N60C3, HGT1S20N60C3S Data Sheet January 2000 45A, 600V, UFS Series N-Channel IGBT Features This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of


    Original     		PDF HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S 150oC. 108ns 150oC g20n60 HGT1S20N60C3S9A HGT1S20N60C3S G20N60C3 HGTG20N60C3 HGTP20N60C3 TA49178 TB334

    g20n60c3d

    Abstract: g20n60 HGTG20N60C3D LD26 RHRP3060 TA49063 TA49178 N-CHANNEL 45A TO-247 POWER MOSFET g20n60c3d equivalent
    Text: G20N60C3D Data Sheet December 2001 45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The G20N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input


    Original     		PDF HGTG20N60C3D HGTG20N60C3D 150oC. TA49178. RHRP3060 TA49063) g20n60c3d g20n60 LD26 RHRP3060 TA49063 TA49178 N-CHANNEL 45A TO-247 POWER MOSFET g20n60c3d equivalent

    relay 12v 1c/o

    Abstract: 12V 1C/O relay G20N60C3 Transistor No C110 transistor C110 HGT1S20N60C3S9A G20N60 N-CHANNEL 45A TO-247 POWER MOSFET TA49178 HGTG20N60C3
    Text: G20N60C3, HGTP20N60C3, HGT1S20N60C3S in t e r r ii J a n u a ry . m Data Sheet 45A, 600V, UFS Series N-Channel IGBT Features This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of


    OCR Scan     		PDF TA49178. HGTG20N60C3 O-247 G20N60C3 relay 12v 1c/o 12V 1C/O relay G20N60C3 Transistor No C110 transistor C110 HGT1S20N60C3S9A G20N60 N-CHANNEL 45A TO-247 POWER MOSFET TA49178

    Untitled

    Abstract: No abstract text available
    Text: ïfA R m S G20N60C3, HGTP20N60C3, HGT1S20N60C3, HGT1S20N60C3S Data Sheet May 1999 45A, 600V, UFS Series N-Channel IGBT This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of


    OCR Scan     		PDF HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3, HGT1S20N60C3S 108ns

    g20n60c3d

    Abstract: Transistor No C110 G20N60C g20n60c3d equivalent LG 631 IC TA49178 transistor C110 LG 631 TA49179 HGTG20N60C3D
    Text: G20N60C3D in t e r r ii J a n u a ry . m D ata S h eet 45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The G20N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input


    OCR Scan     		PDF HGTG20N60C3D HGTG20N60C3D TA49178. RHRP3060 TA49063) g20n60c3d Transistor No C110 G20N60C g20n60c3d equivalent LG 631 IC TA49178 transistor C110 LG 631 TA49179