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onsemi HGTG20N60B3D IGBT 600V 40A TO247-3
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DigiKey	HGTG20N60B3D	Tube			450	1 - 10 - 100 - 1000 $3.22318 10000 $3.22318	Buy Now
Rochester Electronics	HGTG20N60B3D				1	1 $3.73 10 $3.73 100 $3.51 1000 $3.17 10000 $3.17	Buy Now
Fairchild Semiconductor Corporation HGTG20N60B3D Electronic Component
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ComSIT USA	HGTG20N60B3D		165			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Others HGTG20N60B3D INSTOCK
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Chip 1 Exchange	HGTG20N60B3D		60			1 - 10 - 100 - 1000 - 10000 -	Get Quote

G20N60B3D Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
G20N60B3D		Fairchild Semiconductor	40A / 600V / UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode		Original	PDF

G20N60B3D Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
G20N60B3D Abstract: G20N60B hg*20n60 Hgtg20n60 Text: G20N60B3D S E M I C O N D U C T O R 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode November 1997 Features Description • 40A, 600V at TC = 25oC • Hyperfast Anti-Parallel Diode The G20N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and	Original	PDF	HGTG20N60B3D HGTG20N60B3D 150oC. RHRP3060. G20N60B3D G20N60B3D G20N60B hg*20n60 Hgtg20n60
G20N60B3D Abstract: BVces HGTG20N60B3D LD26 RHRP3060 igbt 600V 45UH Text: S E M I C O N D U C T O R G20N60B3D 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode January 1996 Features Package • 40A, 600V at TC = +25oC JEDEC STYLE TO-247 • Typical Fall Time - 140ns at +150oC E C • Short Circuit Rated	Original	PDF	HGTG20N60B3D O-247 140ns 150oC HGTG20N60B3D 150oC. RHRP3060 1-800-4-HARRIS G20N60B3D BVces LD26 igbt 600V 45UH
IGBTs Abstract: G20N60B3D g20n60 G20N60B HGTG20N60B3D LD26 RHRP3060 Text: G20N60B3D Data Sheet December 2001 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Features The G20N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input	Original	PDF	HGTG20N60B3D HGTG20N60B3D 150oC. RHRP3060. 140ns 150oC IGBTs G20N60B3D g20n60 G20N60B LD26 RHRP3060
g20n60b3d Abstract: HGTG20N60B3D MOSFET 40A 600V LD26 RHRP3060 Text: S E M I C O N D U C T O R G20N60B3D 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode January 1997 Features Package • 40A, 600V at TC = 25oC JEDEC STYLE TO-247 • Typical Fall Time . . . . . . . . . . . . . . . . . . . . . . . 140ns at 150oC	Original	PDF	HGTG20N60B3D O-247 140ns 150oC HGTG20N60B3D 150oC. g20n60b3d MOSFET 40A 600V LD26 RHRP3060
G20N60B3D Abstract: No abstract text available Text: G20N60B3D Data Sheet December 2001 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Features The G20N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input	Original	PDF	HGTG20N60B3D HGTG20N60B3D 150oC. RHRP3060. 140ns 150oC G20N60B3D
65e9 transistor Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 \| \| ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12	Original	PDF	1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
g20n60b3d Abstract: G20N60 HGTG20N60B3D LD26 RHRP3060 TA49016 Text: G20N60B3D Data Sheet January 2000 File Number 3739.6 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Features The G20N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input	Original	PDF	HGTG20N60B3D HGTG20N60B3D 150oC. RHRP3060. 140ns 150oC g20n60b3d G20N60 LD26 RHRP3060 TA49016
G20N60B3D Abstract: HGTG20N60B3D LD26 RHRP3060 G20N60B3 Text: G20N60B3D Semiconductor 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode November 1997 Features Description • 40A, 600V at TC = 25oC • Hyperfast Anti-Parallel Diode The G20N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and	Original	PDF	HGTG20N60B3D HGTG20N60B3D 150oC. RHRP3060. G20N60B3D LD26 RHRP3060 G20N60B3
G20N60B3D Abstract: G20N60 HGTG20N60B3D LD26 RHRP3060 Text: G20N60B3D Data Sheet January 2000 File Number 3739.6 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Features The G20N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input	Original	PDF	HGTG20N60B3D HGTG20N60B3D 150oC. RHRP3060. 140ns 150oC G20N60B3D G20N60 LD26 RHRP3060
G20N60B3D Abstract: TA49016 G20N60B3 transistor C110 C110 HGTG20N60B3D LD26 RHRP3060 hgtg20n Text: G20N60B3D interrii J a n u a ry . m D ata S h eet 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The G20N60B3D is a MOS gated high voltage switching device com bining the best features of MOSFETs and bipolar transistors. The device has the high input	OCR Scan	PDF	HGTG20N60B3D HGTG20N60B3D RHRP3060. TA49016. G20N60B3D TA49016 G20N60B3 transistor C110 C110 LD26 RHRP3060 hgtg20n