G20N60B3D
Abstract: G20N60B hg*20n60 Hgtg20n60
Text: HGTG20N60B3D S E M I C O N D U C T O R 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode November 1997 Features Description • 40A, 600V at TC = 25oC • Hyperfast Anti-Parallel Diode The HGTG20N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and
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HGTG20N60B3D
HGTG20N60B3D
150oC.
RHRP3060.
G20N60B3D
G20N60B3D
G20N60B
hg*20n60
Hgtg20n60
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G20N60B3D
Abstract: BVces HGTG20N60B3D LD26 RHRP3060 igbt 600V 45UH
Text: S E M I C O N D U C T O R HGTG20N60B3D 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode January 1996 Features Package • 40A, 600V at TC = +25oC JEDEC STYLE TO-247 • Typical Fall Time - 140ns at +150oC E C • Short Circuit Rated
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HGTG20N60B3D
O-247
140ns
150oC
HGTG20N60B3D
150oC.
RHRP3060
1-800-4-HARRIS
G20N60B3D
BVces
LD26
igbt 600V
45UH
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IGBTs
Abstract: G20N60B3D g20n60 G20N60B HGTG20N60B3D LD26 RHRP3060
Text: HGTG20N60B3D Data Sheet December 2001 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Features The HGTG20N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input
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HGTG20N60B3D
HGTG20N60B3D
150oC.
RHRP3060.
140ns
150oC
IGBTs
G20N60B3D
g20n60
G20N60B
LD26
RHRP3060
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g20n60b3d
Abstract: HGTG20N60B3D MOSFET 40A 600V LD26 RHRP3060
Text: S E M I C O N D U C T O R HGTG20N60B3D 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode January 1997 Features Package • 40A, 600V at TC = 25oC JEDEC STYLE TO-247 • Typical Fall Time . . . . . . . . . . . . . . . . . . . . . . . 140ns at 150oC
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HGTG20N60B3D
O-247
140ns
150oC
HGTG20N60B3D
150oC.
g20n60b3d
MOSFET 40A 600V
LD26
RHRP3060
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G20N60B3D
Abstract: No abstract text available
Text: HGTG20N60B3D Data Sheet December 2001 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Features The HGTG20N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input
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HGTG20N60B3D
HGTG20N60B3D
150oC.
RHRP3060.
140ns
150oC
G20N60B3D
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65e9 transistor
Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12
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1-888-INTERSIL
MS-012AA
MO-153AA
RF1K49090
RF1K49093
RF1K49092
ITF87056DQT
ITF87072DK8T
ITF87008DQT
RF1K49223
65e9 transistor
transistor 75307D
Transistor 65e8
SD MOSFET DRIVE DATASHEET 4468 8 PIN
G40N60
RHR15120 equivalent
10n120bnd
76107d
transistor 76121D
emerson three phase dc motor driver service note
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g20n60b3d
Abstract: G20N60 HGTG20N60B3D LD26 RHRP3060 TA49016
Text: HGTG20N60B3D Data Sheet January 2000 File Number 3739.6 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Features The HGTG20N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input
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HGTG20N60B3D
HGTG20N60B3D
150oC.
RHRP3060.
140ns
150oC
g20n60b3d
G20N60
LD26
RHRP3060
TA49016
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G20N60B3D
Abstract: HGTG20N60B3D LD26 RHRP3060 G20N60B3
Text: HGTG20N60B3D Semiconductor 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode November 1997 Features Description • 40A, 600V at TC = 25oC • Hyperfast Anti-Parallel Diode The HGTG20N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and
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Original
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HGTG20N60B3D
HGTG20N60B3D
150oC.
RHRP3060.
G20N60B3D
LD26
RHRP3060
G20N60B3
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G20N60B3D
Abstract: G20N60 HGTG20N60B3D LD26 RHRP3060
Text: HGTG20N60B3D Data Sheet January 2000 File Number 3739.6 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Features The HGTG20N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input
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Original
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PDF
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HGTG20N60B3D
HGTG20N60B3D
150oC.
RHRP3060.
140ns
150oC
G20N60B3D
G20N60
LD26
RHRP3060
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G20N60B3D
Abstract: TA49016 G20N60B3 transistor C110 C110 HGTG20N60B3D LD26 RHRP3060 hgtg20n
Text: HGTG20N60B3D interrii J a n u a ry . m D ata S h eet 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60B3D is a MOS gated high voltage switching device com bining the best features of MOSFETs and bipolar transistors. The device has the high input
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HGTG20N60B3D
HGTG20N60B3D
RHRP3060.
TA49016.
G20N60B3D
TA49016
G20N60B3
transistor C110
C110
LD26
RHRP3060
hgtg20n
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20n60b3d
Abstract: G20N60B
Text: HGTG20N60B3D 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Package Features • 40A, 600V at T c = +25°C JEDEC STYLE TO-247 • Typical Fall Time - 140ns at +150°C • Short Circuit Rated • Low Conduction Loss • Hyperfast Anti-Parallel Diode
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HGTG20N60B3D
140ns
O-247
HGTG20N60B3D
RHRP3Q60.
20n60b3d
G20N60B
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