G11 TRANSISTOR Search Results

G11 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

G11 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
G11 transistor Abstract: 6T SRAM LSI ASIC lsi gigablaze transceiver transistor G11 ADC Verilog Implementation Text: G11 A S I C C e l l - B a s e d P r o d u c t s Eleventh Generation ASIC Technology Overview LSI Logic’s G11 ASIC product family offers two distinct products—one optimized for high performance G11-p , the other for low power (G11-v)—enabling designers to meet divergent cost/performance requirements, whether it is for networking, telecoms/wireless, computer or consumer applications. Based on a single	Original	G11-p) G11-v 18-micron B20017 G11 transistor 6T SRAM LSI ASIC lsi gigablaze transceiver transistor G11 ADC Verilog Implementation	PDF
600V igbt dc to dc buck converter Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635 Text: Infineon Product Catalog for Distribution 2008 Infineon Product Catalog for Distribution 2008 Product Catalog for Distribution Ordering No. B192-H6780-G11-X-7600 Published by Infineon Technologies AG [ www.infineon.com ] [ www.infineon.com/distribution ]	Original	B192-H6780-G11-X-7600 SP000008186 VDSL6100i-E 600V igbt dc to dc buck converter TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD Digital Transistors built-in resistors EMG11 dual digital transistors (NPN+NPN) SOT-553 FEATURES Two DTC123JCA chips in a package 1 Marking: G11 Equivalent circuit: Absolute maximum ratings (Ta=25℃) Symbol	Original	EMG11 OT-553 DTC123JCA 100MHz	PDF
transistor G11 Abstract: to-126 HIGH SPEED SWITCHING transistor g11 transistor NPN Transistor 10A 400V NPN Transistor 1A 400V to - 92 to-126 npn switching transistor 400v d 772 transistor Text: TS13003 High Voltage NPN Transistor TO-92 TO-126 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCEO 400V BVCBO 700V IC 1.5A VCE SAT Features 1V @ IC =0.5A, IB =0.1A Block Diagram ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type	Original	TS13003 O-126 TS13003CT TS13003CK transistor G11 to-126 HIGH SPEED SWITCHING transistor g11 transistor NPN Transistor 10A 400V NPN Transistor 1A 400V to - 92 to-126 npn switching transistor 400v d 772 transistor	PDF
Untitled Abstract: No abstract text available Text: EMG11 / UMG11N / FMG11A Transistors Emitter common dual digital transistors EMG11 / UMG11N / FMG11A zExternal dimensions (Units : mm) zFeatures 1) Two DTA123Js chips in a EMT or UMT or SMT package. 0.22 (4) (3) (2) (5) EMG11 / UMG11N (3) R1 (2) 0.5 Each lead has same dimensions	Original	EMG11 UMG11N FMG11A DTA123Js EMG11 UMG11N	PDF
EMG11 Abstract: FMG11A T148 UMG11N marking G11 Text: EMG11 / UMG11N / FMG11A Transistors Emitter common dual digital transistors EMG11 / UMG11N / FMG11A !External dimensions (Units : mm) !Features 1) Two DTA123Js chips in a EMT or UMT or SMT package. 0.22 (4) (3) (2) (5) EMG11 / UMG11N (3) R1 (2) 0.5 Each lead has same dimensions	Original	EMG11 UMG11N FMG11A DTA123Js UMG11N FMG11A T148 marking G11	PDF
CA3102 Abstract: CA3102E CA3102M CA3102MZ FN611 Text: CA3102 Data Sheet October 12, 2005 Dual High Frequency Differential Amplifier For Low Power Applications Up to 500MHz The CA3102 consists of two independent differential amplifiers with associated constant current transistors on a common monolithic substrate. The six transistors which	Original	CA3102 500MHz CA3102 500MHz. FN611 200MHz CA3102E CA3102M CA3102MZ	PDF
CA3102 Abstract: CA3102E CA3102M MS-012-AB diode b22 L 321 t Text: CA3102 TM Data Sheet November 1999 Dual High Frequency Differential Amplifier For Low Power Applications Up to 500MHz The CA3102 consists of two independent differential amplifiers with associated constant current transistors on a common monolithic substrate. The six transistors which	Original	CA3102 500MHz CA3102 500MHz. FN611 200MHz CA3102E CA3102M MS-012-AB diode b22 L 321 t	PDF
CA3102 Abstract: CA3102E CA3102M MS-012-AB Text: CA3102 Data Sheet November 1999 Dual High Frequency Differential Amplifier For Low Power Applications Up to 500MHz The CA3102 consists of two independent differential amplifiers with associated constant current transistors on a common monolithic substrate. The six transistors which	Original	CA3102 500MHz CA3102 500MHz. 200MHz CA3102E CA3102M MS-012-AB	PDF
Untitled Abstract: No abstract text available Text: EMG11 / UMG11N / FMG11A Transistors Emitter common dual digital transistors EMG11 / UMG11N / FMG11A !External dimensions (Units : mm) !Features 1) Two DTA123Js chips in a EMT or UMT or SMT package. 0.22 (4) (3) (2) (5) EMG11 / UMG11N (3) R1 (2) 0.5 Each lead has same dimensions	Original	EMG11 UMG11N FMG11A DTA123Js EMG11 UMG11N	PDF
EMG11 Abstract: FMG11A T148 UMG11N Text: EMG11 / UMG11N / FMG11A Transistors Emitter common dual digital transistors EMG11 / UMG11N / FMG11A zExternal dimensions (Unit : mm) zFeatures 1) Two DTA123Js chips in a EMT or UMT or SMT package. 0.22 (4) (3) (2) (5) R1 DTr1 FMG11A Package EMT5 UMT5 SMT5	Original	EMG11 UMG11N FMG11A DTA123Js UMG11N EMG11 FMG11A T148	PDF
z144 Abstract: zener Diode B22 1021-P1 cascode transistor array CA3127 CA3127E CA3127M CA3127M96 HP342A ,zener Diode B22 Text: CA3127 S E M I C O N D U C T O R High Frequency NPN Transistor Array August 1996 Features Description • Gain Bandwidth Product fT . . . . . . . . . . . . . . . . >1GHz The CA3127 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Each of the	Original	CA3127 CA3127 500MHz. 200MHz z144 zener Diode B22 1021-P1 cascode transistor array CA3127E CA3127M CA3127M96 HP342A ,zener Diode B22	PDF
HP-343A Abstract: HP342A y12 t 646 HP343A CA3127E 1021-P1 cascode transistor array 150MIL CA3127 CA3127F Text: CA3127 S E M I C O N D U C T O R High Frequency N-P-N Transistor Array March 1993 Features Description • Gain Bandwidth Product fT . . . . . . . . . . . . . . . . >1GHz The CA3127* consists of five general purpose silicon n-p-n transistors on a common monolithic substrate. Each of the	Original	CA3127 CA3127* CA3127 500MHz. 100MHz 1021-P1 100MHz HP343A HP-343A HP342A y12 t 646 HP343A CA3127E 1021-P1 cascode transistor array 150MIL CA3127F	PDF
z144 Abstract: CA3127 1021-P1 cascode transistor array HP342A CA3127E CA3127M CA3127M96 zener Diode B22 Text: CA3127 High Frequency NPN Transistor Array August 1996 Features Description • Gain Bandwidth Product fT . . . . . . . . . . . . . . . . >1GHz The CA3127 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Each of the	Original	CA3127 CA3127 500MHz. z144 1021-P1 cascode transistor array HP342A CA3127E CA3127M CA3127M96 zener Diode B22	PDF

ccb transistor Abstract: TRANSISTOR 100MHz Text: CA3127 Data Sheet August 2003 FN662.4 High Frequency NPN Transistor Array Features The CA3127 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Each of the completely isolated transistors exhibits low 1/f noise and a	Original	CA3127 FN662 CA3127 500MHz. 30dBtersil ccb transistor TRANSISTOR 100MHz	PDF
m 60 n 03 g10 Abstract: No abstract text available Text: ZETEX SEMICONDUCTORS IbE D • Tï7057fl DOOtfl? 4 ■ ZETB SEMICONDUCTOR DICE ELECTRICAL CHARACTERISTICS PNP SWITCHING TRANSISTORS 2N2907A 2N2907 BCY70 BCY71 BCY72 2N4403 2N3906 2N2894 ZTX510 VCbo Min V CE0 Min T on Max 31 Pice type Volts Volts ns . ns 60	OCR Scan	7057fl 2N2907A 2N2907 BCY70 BCY71 BCY72 2N4403 m 60 n 03 g10	PDF
BC337B Abstract: BFS98 ZTX338 ZTX452 MPSA06 ZTX451 ZTX454 ZTX551 ZTX552 ZTX553 Text: TABLE 7 : NPN/PNP MEDIUM POWER The transistors shown in this table have been designed to operate and provide useful gain at current levels up to 1 amp with power dissipation capabilities of 1 0 0 0 mW at 2 5 ° C ambient temperature. Typical application areas include: Audio Frequency Drivers and Output Stages, Relay Sw itching, etc.	OCR Scan	1000mW ZTX4555 ZTX555 ZTX454 ZTX554 ZTX453S ZTX553 ZTX452 ZTX552 MPSA06 BC337B BFS98 ZTX338 ZTX451 ZTX551 ZTX552 ZTX553	PDF
BC337b Abstract: bc327b 2N2102 2N3262 2N4036 BCY65E BFX84 BFX85 ZT86 ZT88 Text: NPN SW ITCHING TABLE 3 - NPN SILICON PLANAR MEDIUM AND HIGH SPEED SWITCHING TRANSISTORS The devices shown in this table are characterised for medium and high speed switching applications in Commercial, Industrial and Military equipments. The devices are listed in order of decreasing Breakdown Voltage VCE0 , decreasing Collector	OCR Scan	2N3262 T0-39 T0-18 ZTX552 MPSA56 ZTX751 ZTX551 MPSA55 ZTX750 ZTX550 BC337b bc327b 2N2102 2N4036 BCY65E BFX84 BFX85 ZT86 ZT88	PDF
bc327b Abstract: bc140 2N1893 2N2102 2N2405 2N4036 BFX85 BSY55 ZT86 ZT88 Text: NPN LOW LEVEL TABLE 1 - NPN SILICO N PLANAR LOW LEVEL T R A N SIST O R S The devices show n in this table are low level transistors designed for small and medium signal, low and medium pow er amplification from D C to radio frequencies in Commercial, Industrial and Military	OCR Scan	ZTX552 MPSA56 ZTX751 ZTX551 MPSA55 ZTX750 ZTX550 BC327A BC327B BC327C bc140 2N1893 2N2102 2N2405 2N4036 BFX85 BSY55 ZT86 ZT88	PDF
2N1893 Abstract: 2N2102 2N2405 2N4036 BFX85 BSY55 ZT86 ZT88 ZT91 ZT92 Text: NPN LOW LEVEL TABLE 1 - NPN SILICO N PLANAR LOW LEVEL T R A N SIST O R S The devices show n in this table are low level transistors designed for small and medium signal, low and medium pow er amplification from D C to radio frequencies in Commercial, Industrial and Military	OCR Scan	ZTX552 MPSA56 ZTX751 ZTX551 MPSA55 ZTX750 ZTX550 BC327A BC327B BC327C 2N1893 2N2102 2N2405 2N4036 BFX85 BSY55 ZT86 ZT88 ZT91 ZT92	PDF
BCY56 Abstract: 2N1893 2N2102 2N2405 2N4036 BFX85 BSY55 ZT86 ZT88 ZT91 Text: NPN LOW LEVEL TABLE 1 - NPN SILICO N PLANAR LOW LEVEL T R A N SIST O R S The devices show n in this table are low level transistors designed for small and medium signal, low and medium pow er amplification from D C to radio frequencies in Commercial, Industrial and Military	OCR Scan	ZTX552 MPSA56 ZTX751 ZTX551 MPSA55 ZTX750 ZTX550 BC327A BC327B BC327C BCY56 2N1893 2N2102 2N2405 2N4036 BFX85 BSY55 ZT86 ZT88 ZT91	PDF
BSY55 Abstract: m 60 n 03 g10 BCY56 2N1893 2N2102 2N2405 2N4036 BFX85 ZT86 ZT88 Text: NPN LOW LEVEL TABLE 1 - NPN SILICO N PLANAR LOW LEVEL T R A N SIST O R S The devices show n in this table are low level transistors designed for small and medium signal, low and medium pow er amplification from D C to radio frequencies in Commercial, Industrial and Military	OCR Scan	ZTX552 MPSA56 ZTX751 ZTX551 MPSA55 ZTX750 ZTX550 BC327A BC327B BC327C BSY55 m 60 n 03 g10 BCY56 2N1893 2N2102 2N2405 2N4036 BFX85 ZT86 ZT88	PDF
ztx614 Abstract: 2n6718 2N6714 2N6715 2N6716 2N6717 2N6724 2N6725 2N6726 2N6727 Text: TABLE 10: 2N6700 SERIES MEDIUM POWER TRANSISTORS Max. Cont. Max. PNP NPN 2N6714 2N6715 2N6724 2N6725 2N6716 2N6717 2N 6731 2N6718 V cbo 2N6726 2N6727 — — 2N6728 2N6729 2N6732 2N6730 •c V CEO Max. V CEIsat at •c m 'c mA V V A A V 40 50 50 60 60 80	OCR Scan	2N6700 2N6714 2N6726 2N6715 2N6727 2N6724 2N6725 2N6716 2N6728 2N6717 ztx614 2n6718 2N6724 2N6725	PDF
BF494 Abstract: B22 base BF495 LY2L C2216 transistors bf495 bf494 emitter common y-parameter F1-07 Text: D r t+ î 3 t+ o r NPN SILICON RF SMALL SIGNAL TRANSISTORS ajiÄi 11 v*« » HÉ = 4 S5SS s s £ CASE TO-92E THE BP494, BF495 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR RF SMALL SIGNAL APPLICATIONS UP TO lOOMHz. CBE ABSOLUTE MAXIMUM RATINGS BF494 BF495	OCR Scan	BP494, BF495 O-92E BF494 300mW 45mlT ly12l B22 base LY2L C2216 transistors bf495 bf494 emitter common y-parameter F1-07	PDF

G11 TRANSISTOR Search Results

G11 TRANSISTOR Result Highlights (5)

G11 TRANSISTOR Datasheets Context Search

G11 transistor

600V igbt dc to dc buck converter

Untitled

transistor G11

Untitled

EMG11

CA3102

CA3102

CA3102

Untitled

EMG11

z144

HP-343A

z144

ccb transistor

m 60 n 03 g10

BC337B

BC337b

bc327b

2N1893

BCY56

BSY55

ztx614

BF494