5503g
Abstract: No abstract text available
Text: I T T CORP/ I T T CMPNTS 31E I> • 4bf l 2ba4 GQ0131b G ■ ÌJ RECTIFIERS Silicon Rectifiers 1 Amp in Plastic Package Type Dwg, No. - Average Rectified . Current at Ta - 50 °C Peak Inverse Voltage Repetitive Peak Forward Current Surge Forward Current Max. Forward
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OCR Scan
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GQ0131b
1N4001
1N4002
1N4003
1N4004
1N4005
1N4006
1N4007
DO-41
DO-35
5503g
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bb529
Abstract: BB521 pin diode do35 BB222 BB*329 A om 355 BB221 equivalent
Text: I T T CORP/ I T T CHPNTS 31E » • 4bfi5t.öM OGGliO^ 3 ■ y -O S -O ? SCHOTTKY DIODES - •. - . ' - •• ' - ••••• - Silicon Schottky Barrier Diodes in DO-35 Package for general purpose applications with low forward voltage drop and very fast switching times.
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OCR Scan
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DO-35
LL101A,
LL103A,
SD101A*
SD101B
SD101C
DO-41
bb529
BB521
pin diode do35
BB222
BB*329 A
om 355
BB221 equivalent
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BS192
Abstract: BS212 D 92 M - 03 DIODE D 92 M - 02 DIODE 10D3 2n3904, itt c 92 M - 02 DIODE bs189
Text: I T T CORP/ I T T CMPNTS 31E D • 4böEböH ÜQQ1 3 Q 7 T ■ VMOS NPN AND PNP TRANSISTORS N-Channel VMOS Transistors Enhancement-Mode MOSFETsfeaturing high input impedance, high power gain, fast switching times, CMOS compatibility, no second breakdown, no thermal runaway.
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OCR Scan
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BS107
BS108
BS112
BS170
BS189
170rox.
DO-41
DO-35
BS192
BS212
D 92 M - 03 DIODE
D 92 M - 02 DIODE
10D3
2n3904, itt
c 92 M - 02 DIODE
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A2 diode
Abstract: 1N414S
Text: I T T CORP/ I T T CMPNTS 31E D • 4bê2bê4 00Q13QÔ 1 ■ SILICON DIODES - - - — - - - - : General Purpose and Switching Diodes in DO-35 Package Type Peak Inv. Voltage PIV Max. Aver. Power Junction Rectified Dissipation TemperaCurrent lo at 25 'G
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OCR Scan
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00Q13QÔ
DO-35
1N914
1N414S
1N4149
1N4150
1N4151
1N4152
1N4153
1N4154
A2 diode
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