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    G 40N60 IGBT Search Results

    G 40N60 IGBT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK040N60Z1 Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 600 V, 52 A, 0.04 Ω@10 V, TO-247 Visit Toshiba Electronic Devices & Storage Corporation
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    GT30N135SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1350 V, 30 A, Built-in Diodes, TO-247 Visit Toshiba Electronic Devices & Storage Corporation
    GT30J65MRB Toshiba Electronic Devices & Storage Corporation IGBT, 650 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    G 40N60 IGBT Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    40n60 igbt

    Abstract: 40n60 40N60A G 40N60 igbt 40n60 equivalent D-68623 igbt equivalent to 40n60
    Text: Low VCE sat IGBT High Speed IGBT IXSH/IXSM 40 N60 IXSH/IXSM 40 N60A VCES I C25 VCE(sat) 600 V 600 V 75 A 75 A 2.5 V 3.0 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		O-247 D-68623 40n60 igbt 40n60 40N60A G 40N60 igbt 40n60 equivalent igbt equivalent to 40n60 PDF

    40N60

    Abstract: G 40N60 igbt 40n60 igbt 40N60A IC IGBT 40N60 g 40n60 N60A
    Text: Low VCE sat IGBT High Speed IGBT IXSH/IXSM 40 N60 IXSH/IXSM 40 N60A VCES IC25 VCE(sat) 600 V 600 V 75 A 75 A 2.5 V 3.0 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ


    Original     		O-247 40N60 40N60A O-204AE 40N60 G 40N60 igbt 40n60 igbt 40N60A IC IGBT 40N60 g 40n60 N60A PDF

    40N60

    Abstract: 40n60 igbt 40N60A IXGH40N60 G 40N60 igbt N60A IC IGBT 40N60 g 40n60 IXGH40N60A IXGM40N60A
    Text: Low VCE sat IGBT High speed IGBT IXGH/IXGM 40 N60 IXGH/IXGM 40 N60A Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 T C = 25°C, limited by leads


    Original     		13/10J 40N60A 40N60 O-204AE 40N60 40n60 igbt 40N60A IXGH40N60 G 40N60 igbt N60A IC IGBT 40N60 g 40n60 IXGH40N60A IXGM40N60A PDF

    40n60 igbt

    Abstract: 40n60 IXGH/40n60 igbt 40N60A G40N60a IXGH/IXGM 40 N60A G 40N60 igbt igbt equivalent to 40n60 IXGH40N60 40n60 transistor
    Text: Low VCE sat IGBT High speed IGBT IXGH/IXGM 40 N60 IXGH/IXGM 40 N60A Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V I C25 TC = 25°C, limited by leads


    Original     		PDF

    43N60

    Abstract: 40N60 max4340 MOSFET 40A 600V
    Text: ADVANCE INFORMATION HiPerFETTM Power MOSFET IXFN 43N60 IXFN 40N60 IXFK 43N60 IXFK 40N60 Single MOSFET Die VDSS I D25 RDS on trr 600V 600V 600V 600V 43A 40A 43A 40A 0.13W 0.15W 0.13W 0.15W 200ns 200ns 200ns 200ns TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings


    Original     		200ns 200ns 43N60 40N60 40N60 O-264 max4340 MOSFET 40A 600V PDF

    43N60

    Abstract: 40n60 IXFN40N60 IXFK40N60 IXFK43N60 IXFN43N60
    Text: ADVANCE INFORMATION HiPerFETTM Power MOSFET IXFN 43N60 IXFN 40N60 IXFK 43N60 IXFK 40N60 Single MOSFET Die VDSS I D25 RDS on trr 600V 600V 600V 600V 43A 40A 43A 40A 0.13W 0.15W 0.13W 0.15W 200ns 200ns 200ns 200ns TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings


    Original     		43N60 40N60 200ns O-264 43N60 40n60 IXFN40N60 IXFK40N60 IXFK43N60 IXFN43N60 PDF

    40n60 igbt

    Abstract: 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60
    Text: SCSOA IGBT S-Series / D-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode Short Circuit Current Rated SCSOA IGBT S-Series Contents IGBT VCES max V High Speed Low VCE(sat) 600 IC VCE(sat) max TC = 25 °C TC = 25 °C A V TO-220 (IXSP) TO-263


    Original     		O-220 O-263 O-247 16N60 B1-10 24N60 30N60 40N60 40n60 igbt 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60 PDF

    ixgh 1500

    Abstract: 40N60A 25N120 200n60 60n60 igbt smd 30n60 10N60A 30N60A .25N100 20n60a
    Text: Insulated Gate Bipolar Transistors IGBT G series with high gain V•CSS : ■■ Type . TJm = 15° CC > New ► IXGA IXGH IXGH IXGH IXGH IXGH IXGH IXGH 10N60 10N60 20N60 31N60 30N60 38N60 40N60 60N60 IXGH 10N100 >■ IXGA 12N100 > IXGH 12N100 > ► >•


    OCR Scan     		10N60 20N60 31N60 30N60 38N60 40N60 60N60 32N60BS 40N60A ixgh 1500 25N120 200n60 60n60 igbt smd 10N60A 30N60A .25N100 20n60a PDF

    Untitled

    Abstract: No abstract text available
    Text: IXSH/IXSM 40 N60 IXSH/IXSM 40 N60A Low VCE sat IGBT1 v High Speed IGBT VC E S ^C 25 VC E (sat) 600 V 600 V 75 A 75 A 2.5 V 3.0 V Short Circuit SO A Capability Symbol Test Conditions v CES Tj = 25°C to 150°C 600 V v CGR ^ 600 V Maximum Ratings = 25°C to 150°C; RGE = 1 M£2


    OCR Scan     		O-247 40N60 40N60A 0D03bflfl PDF

    40N60A

    Abstract: 40n60 IXGH40N60 743e 40n60 igbt AT/40n60 igbt
    Text: : Low VCE sat IGBT1 w High speed IGBT IXGH/IXGM 40 N60 IXGH/IXGM 40 N60A Symbol Test Conditions V CES Tj = 25°C to 150°C 600 V Tj = 25°C to 150°C; RGE = 1 Mi2 600 V Continuous ±20 V Transient ±30 V vCGR vGES vGEM Maximum Ratings 'c25 Tc = 25°C, limited by leads


    OCR Scan     		O-247 O-204 4fciflLi25b 40N60 40N60A 40N60A IXGH40N60 743e 40n60 igbt AT/40n60 igbt PDF

    40N60

    Abstract: 40N60A 40n60 igbt
    Text: LowVCE sat IGBT High Speed IGBT IXSH/IXSM 40 N60 IXSH/IXSM 40 N60A VC E S ^C 25 VC E (s a t) 600 V 600 V 75 A 75 A 2.5 V 3.0 V Short Circuit SOA Capability Symbol v Test Conditions Maximum Ratings Tj = 25°C to 150°C 600 V v COR T j = 25°C to 150°C; RGE = 1 MO


    OCR Scan     		O-247 40N60 40N60A 40n60 igbt PDF

    BTS 2146

    Abstract: No abstract text available
    Text: n ix Y S IGBT IXSH 40N60 Low VCE sat VCES I C25 v CE(sat) 600 V 75 A 2.5 V Short Circuit SOA Capability Symbol Test Conditions V CES T j =25°C to150°C 600 V VCGR T d = 25° C to 150° C; ReE = 1 M£2 600 V VSES Continuous ±20 V vOEM Transient ±30 V 'c25


    OCR Scan     		40N60 to150 O-247AD BTS 2146 PDF

    4on60

    Abstract: B289 IXGH40N60 1XGM40N60A ges 2222 B-289 40n60
    Text: VCES IXGH/IXGM 40 N60 IXGH/IXGM 40 N60A Low VCE sat IGBT High speed IGBT »C25 75 A 75 A 600 V 600 V V " CE(sat) 2.5 V 3.0 V Not for new designs Symbol Test Conditions Maximum Ratings v CE S ^ = 2 5 °C to 1 5 0 °C 600 V VCo„ ^ = 25°C to 150°C; HGE = 1 M fi


    OCR Scan     		O-247 B2-88 40NG0 40N60A B2-89 4on60 B289 IXGH40N60 1XGM40N60A ges 2222 B-289 40n60 PDF

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS ADVANCE INFORMATION HiPerFET Power MOSFET 43N60 IXFN 40N60 ix f n Single MOSFET Die IXFK 43N60 IXFK 40N60 V DSS ^D25 600V 600V 600V 600V 43A 40A 43A 40A D Kr DS on 0.1 3Ü. 0.1 50. 0.1 30 0.1 50 200ns 200ns 200ns 200ns TO-264 AA (IXFK) Symbol


    OCR Scan     		43N60 40N60 200ns O-264 PDF

    30n60

    Abstract: G 40N60 igbt Insulated Gate Bipolar Transistors igbt 30N60 40n60 igbt 40n60 25N100 45N10
    Text: Insulated Gate Bipolar Transistors IGBT Insulated Gate Bipolar Transistors (IGBT) "S" series with improved SCSOA capability T ft* w ^0 *c Te . w c max. • ■ ■ ■ I »M m P ggM S i Billi IXSH IXSH IXSH IXSH IXSH IXSH 20N60 30N60 40N60 25N100 45N100


    OCR Scan     		20N60 30N60 40N60 25N100 45N100 45N120 O-247 G 40N60 igbt Insulated Gate Bipolar Transistors igbt 30N60 40n60 igbt 45N10 PDF

    Untitled

    Abstract: No abstract text available
    Text: MbñbEZb 0 0 0 1 7 3 ? 323 II X Y Insulated Gate Bipolar Transistors IGBT "S" series with im proved SC SO A capability Type i Vcts • c ■ c Tc = 9 0 C Tc = 25'C ► New max. typ. C typ. pF 1800 2800 4500 pF 45 50 90 HS US KW W 0.4 0.4 0.4 10 0.83 0.62


    OCR Scan     		20N60 30N60 40N60 25N100 45N100 45N120 40N60AU1 35N100U1 55N100U1Â 52N60AU1Â PDF

    30n60

    Abstract: 40N60AU1 40N60 igbt 30N60 30N60A 50N100 30n60* 227 30N60U1 IXSN40N60AU1 50N60U1
    Text: MbflbZZb 00Q1737 323 ¡IX Y insulated Gate Bipolar Transistors IGBT "S" series with im proved SC SO A capability Type 'i > New IXSH IXSH IXSH IXSH IXSH IXSH IXSH ► IXSH IXSH IXSH IXSH IXSH > IXSH > IXSH ÍXSM ÍXSM !XSM 20N60 30N60 40N60 25N100 45N100


    OCR Scan     		00Q1737 20N60 O-247 30N60 40N60 25N100 45N100 45N120 20N60A 24N60A 30n60 40N60AU1 40N60 igbt 30N60 30N60A 50N100 30n60* 227 30N60U1 IXSN40N60AU1 50N60U1 PDF

    40N60A

    Abstract: G 40N60 igbt IXSN35N120AU1 IXSH 35N120AU1 50N60AU1 25N120AU1 IXLH35N120A IXLK35N120AU1 IXLN35N120AU1 IXLN50N120A
    Text: Insulated Gate Bipolar Transistors IGBT "S" and "L" series with improved SCSOA capability Type Tjm = 150 C ► New ► IXSP 2N100 IXSH 30N60 IXSH 40N60 IXSH 25N100 IXSH 45N100 IXSH 45N120 IXSP 2N100A ► IXSH 10N60A IXSH 24N60A IXSH 30N6QA IXSH 40N60A IXSH 25N100A


    OCR Scan     		2N100 30N60 40N60 25N100 45N100 45N120 2N100A 10N60A 24N60A 30N6QA 40N60A G 40N60 igbt IXSN35N120AU1 IXSH 35N120AU1 50N60AU1 25N120AU1 IXLH35N120A IXLK35N120AU1 IXLN35N120AU1 IXLN50N120A PDF

    40n80

    Abstract: IXGH40N60 38N60 12N60U1 40N80A 50N60AU1 20n60 igbt igbt 20n60 60n60 ixgh IXGA24N60A
    Text: Insulated Gate Bipolar Transistors IGBT 4^ r/ioei fType VCE(sat) max. Cto. typ. typ. A V pF pP 20 40 40 50 76 75 75 10 20 31 30 38 40 60 2.5 2.5 1.8 2.5 1.8 2.5 1.8 750 1500 1500 2800 2500 4500 4000 30 40 40 70 70 60 100 20 34 50 10 17 25 3.5 750 1500 2750


    OCR Scan     		10N60 20N60 31N60 30N60 38N60 40N60 60N60 10N100 17N100 25N100 40n80 IXGH40N60 12N60U1 40N80A 50N60AU1 20n60 igbt igbt 20n60 60n60 ixgh IXGA24N60A PDF

    85C0

    Abstract: IXSN35N100U1 SO 042
    Text: Insulated Gate Bipolar Transistors IGBT "S" series with improved SCSOA capability Type V v CE(aat} c te8 max. typ- typ- ^auc max. PF Outlines on page 33 C = Collector, E Emitter, G = Gate, KE = Kelvin Emitter US K/W W 10 0.83 0.62 0.42 155 45 50 90 US 0.4


    OCR Scan     		20N60® 30N60 40N60 25N100 45N100 N100U1 OT-227B 85C0 IXSN35N100U1 SO 042 PDF

    40n60 transistor

    Abstract: 30N60 40n60 30N60A 40n60 igbt 17N10 wiom DC transistor JE 1090 20N60A igbt equivalent to 40n60
    Text: MbE D • Mb S b S E b OO O O S T M T «IXY I X V S CORP T □IX Y S I V I S Data Book NO.91560A October 1991 "S" Series MOSIGBTs High Short Circuit SOA Insulated Gate Bipolar Transistor Features • • • Guaranteed Short Circuit Capability SCSOA Optimized for 60Hz to 30kHz Switching


    OCR Scan     		1560A 30kHz IXSH20N60 IXSM20N60 Tj-125 40n60 transistor 30N60 40n60 30N60A 40n60 igbt 17N10 wiom DC transistor JE 1090 20N60A igbt equivalent to 40n60 PDF

    KYS 30 40 diode

    Abstract: 40n60 transistor mos 30N60 2355Z wiom DC IXYS 30N60 of ic 3915 1XYS 30N60T 35N100
    Text: MbE 4bôb22b D I X Y S OGQQÔTM T H IX Y CORP □IXYS Data Book NO.91560A October 1991 "S" Series MOSIGBTs High Short Circuit SOA Insulated Gate Bipolar Transistor Features Guaranteed Short Circuit Capability SCSOA Low Input Capacitances Optimized for 60Hz to 30kHz Switching


    OCR Scan     		30kHz 1560A 4bflb55b Q000S1S IXSH20N60 IXSM20N60 KYS 30 40 diode 40n60 transistor mos 30N60 2355Z wiom DC IXYS 30N60 of ic 3915 1XYS 30N60T 35N100 PDF

    BTS 3900 a

    Abstract: BTS 3900 12N60 BTS 3900 l 35N120U1 24n60 52N60A IXSH 35N120AU1 35n120u 35N120AU1
    Text: Insulated Gate Bipolar Transistors IGBT The IGBT is a com bination of bipolar and MOS technologies. The best features of bipolar transistors are merged with the voltage-controlled properties of M OSFETs. A dvantages to the user: • rugged, short-circuit-proof device


    OCR Scan     		T-227B BTS 3900 a BTS 3900 12N60 BTS 3900 l 35N120U1 24n60 52N60A IXSH 35N120AU1 35n120u 35N120AU1 PDF