FSS9130D1 Search Results

Contextual Info: FSS9130D, FSS9130R FR HARRIS S E M I C O N D U C T O R 6A, -100V, 0.660 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Features Description • 6A, -100V, rQg oN = 0«660il The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

Contextual Info: FSS9130D, FSS9130R 6A, -100V, 0.660 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 6A, -100V, r[js ON = 0.660£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

2E12

Abstract: FSS9130D FSS9130D1 FSS9130D3 FSS9130R FSS9130R1
Contextual Info: FSS9130D, FSS9130R 6A, -100V, 0.660 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 6A, -100V, rDS ON = 0.660Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

Rad Hard in Fairchild for MOSFET

Abstract: 2E12 FSS9130D FSS9130D1 FSS9130D3 FSS9130R FSS9130R1
Contextual Info: FSS9130D, FSS9130R 6A, -100V, 0.660 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs December 2001 Features Description • 6A, -100V, rDS ON = 0.660Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs

ic 4082 data sheet

Abstract: 2E12 FSS9130D FSS9130D1 FSS9130D3 FSS9130R FSS9130R1
Contextual Info: FSS9130D, FSS9130R 6A, -100V, 0.660 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 6A, -100V, rDS ON = 0.660Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event