FSS130 Search Results

Contextual Info: JANSR2N7399 Formerly FSS130R4 11A, 100V, 0.210 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 11A, 100V, rDS ON = 0.210Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs

transistors ai 585

Contextual Info: FSS130D, FSS130R S em iconductor 11 A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description . 11 A, 100V, rDS 0 N = 0.210£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

MOSFET MARK H1

Abstract: 2E12 FSS130R4 JANSR2N7399 T0-257AA Rad Hard in Fairchild for MOSFET
Contextual Info: JANSR2N7399 Formerly FSS130R4 11A, 100V, 0.210 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N73 99 /Subject (11A, 100V, 0.210 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords () /Creator () /DOCI NFO pdfmark [ /PageMode /UseOutlines

Contextual Info: h a r S E M I C O N D U C T O R FSS130D, FSS130R " Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June 1997 Features Package • 11 A, 100V, rDS ON = 0.210£i TO-257AA • Total Dose Meets Pre-Rad Specifications to 100K RAD (Si) • Single Event

4431 mosfet

Contextual Info: S JANSR2N7399 Formerly FSS130R4 11A, 100V, 0.210 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 11A,100V,rDS ON = 0.21012 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

fss130

Contextual Info: ¡BMí*« ? FSS130D, FSS130R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June1997 Features Package • 11 A, 100V, rDS ON = 0.210Í2 TO-257AA Total Dose Meets Pre-Rad Specifications to 100K RAD (Si) Single Event Safe Operating Area Curve for Single Event Effects

2E12

Abstract: FSS130D FSS130D1 FSS130D3 FSS130R FSS130R1 FSS130R3 Rad Hard in Fairchild for MOSFET
Contextual Info: FSS130D, FSS130R 11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 11A, 100V, rDS ON = 0.210Ω The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically

2E12

Abstract: FSS130R4 JANSR2N7399 T0-257AA
Contextual Info: JANSR2N7399 Formerly FSS130R4 11A, 100V, 0.210 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 11A, 100V, rDS ON = 0.210Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

Contextual Info: FSS130D, FSS130R 11 A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 11 A, 100V, rDS 0N = 0.21 Oil The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space

Rad Hard in Fairchild for MOSFET

Contextual Info: FSS130D, FSS130R 11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 11A, 100V, rDS ON = 0.210Ω The Discrete Products Operation of Fairchild has developed a series of Radiation Hardened MOSFETs specifically

2E12

Abstract: FSS130D FSS130D1 FSS130D3 FSS130R FSS130R1 FSS130R3
Contextual Info: FSS130D, FSS130R 11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 11A, 100V, rDS ON = 0.210Ω The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically

Rad hard MOSFETS in Harris

Abstract: MIL-S-19500 2E12 FSS130D FSS130R fss130
Contextual Info: S E M I C O N D U C T O R FSS130D, FSS130R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June 1997 Features Package • 11A, 100V, rDS ON = 0.210Ω • Total Dose - Meets Pre-Rad Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects

B402-6

Contextual Info: Radiation Hardened MOSFETs, MegaRAD Series N-Channel TO-205AF _ k a 0.18 b 100 V 8 FRL130, JANSR2N7272 0.50 5 0.70 4 2.50 200V 250V 500V FRL230, JANSR2N7275 FRL234, JANSR2N7278 2 N-Channel TO-258AA rDS ON (n ) b 100 V 0.050 41 FRE160, 2N7300 0.080

MOSFETS

Abstract: Power MOSFETs
Contextual Info: RH SEGR MOSFETs PAGE TECHNICAL ASSISTANCE. 2 LINE CARDS Radiation Hardened MOSFETs, MegaRAD Series.

FSL430

Abstract: FRL-230 FSS430 FSF9250 JANSR2N7272 JANSR2N7275 JANSR2N7278 JANSR2N7281 2N7306 FRM92
Contextual Info: Radiation Hardened MOSFETs, MegaRAD Series N-Channel TO-205AF rDS ON (Ω) ID 100V 0.18 8 FRL130, JANSR2N7272 0.50 5 0.70 4 2.50 N-Channel TO-258AA 200V 250V 500V FRL230, JANSR2N7275 FRL234, JANSR2N7278 2 rDS(ON) (Ω) ID 100V 0.050 41 FRE160, 2N7300 0.080

7404

Contextual Info: JAN S Rad Hard Power M OSFET Selection Guide HARRIS P A R T N UM BER FORM ERLY AVAILABLE A S PACKAGE B V D S S V rDS{on) (ß ) Id (A) JANSR2N7272 FRL130R4 TO-2Û5AF 100 0.180 8 JANSR2N7275 FRL230R4 TO-205AF 200 0.500 5 JAN SR2N 7278 FRL234R4 T 0 -205A F

3203 MOSFET

Abstract: Mosfets mosfet .5a 100v n-channel 250V power mosfet 100V 8A N-Channel MOSFET FSj264
Contextual Info: RAD HARD MOSFETs RAD HARD SEGR MOSFETs PAGE Rad Hard Power MOSFET Selection G u id e . 3-3 Rad Hard Data Packages - Harris Power T ra n s is to re .

MOSFET Selection Guide

Abstract: TO257AA t0-205af TO254AA FSj264
Contextual Info: Rad Hard Power MOSFET Selection Guide N-Channel PACKAGE BV d s s V rDS(ON) (£!) ' d (A) FSL110D, FSL110R PART NUMBER T0-205AF 100 0.600 3.5 FSL13AOD, FSL13AOR TO-205AF 100 0.180 9 FSL23AOD, FSL23AOR TO-205AF 200 0.350 6 FSL23A4D, FSL23A4R T0-205AF 250 0.480

equivalent data book of 10N60 mosfet

Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
Contextual Info: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning: