FS TRANSISTOR MARKING Search Results

2SK238

Contextual Info: JUNCTION FIELD EFFECT TRANSISTOR 2SK238 FM TUNER N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR M IN I MOLD FEATURES PACKAGE DIMENSIONS • Low Feedback Capacitance Crss * 0.07 pF TYP. in m illim eter« •H ig h l y fs I l y fs I * 3.5 ms TYP. ABSOLUTE MAXIMUM RATINGS

Contextual Info: NGTB40N135IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering

40N120IHR

Contextual Info: NGTB40N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering

Contextual Info: NGTB15N135IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering

Contextual Info: NGTB15N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering

Contextual Info: NGTB30N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering

Contextual Info: NGTB40N135IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering

Contextual Info: NGTB40N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering

fq sot-23

Abstract: marking FQ transistor MARKING 560 pnp sot23 transistor sot23 MARKING 560 2SA1037 R 560 SOT23
Contextual Info: 2SA1037 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — Excellent hFE linearity. — Complments the 2SC2412 MARKING : FQ, FR, FS Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter

Contextual Info: NGTB30N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering

NGTB20N135IHRWG

Contextual Info: NGTB20N135IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering

Contextual Info: NGTB20N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, provides and superior performance in demanding switching applications, and offers

Contextual Info: NGTB20N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, provides and superior performance in demanding switching applications, and offers

30n135ihr

Contextual Info: NGTB30N135IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, provides superior performance in demanding switching applications, and offers low

Contextual Info: NGTB20N135IHRWG Product Preview IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering

Contextual Info: NGTB20N135IHRWG Product Preview IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering

Contextual Info: NGTB20N120IHRWG Product Preview IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering

2SC2412

Abstract: marking FQ 2SA1037 transistor marking fq
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SA1037 SOT-23 TRANSISTOR PNP FEATURES ∙ Excellent hFE linearity. ∙ Complments the 2SC2412 1. BASE 2. EMITTER 3. COLLECTOR MARKING : FQ, FR, FS MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

75n60

Contextual Info: NGTB75N60FL2WG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.

15j321

Abstract: TRANSISTOR 15J321 2-10R1C GT15J321 RG300A
Contextual Info: GT15J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15J321 High Power Switching Applications Fast Switching Applications • Fourth-generation IGBT • Fast switching FS • Enhancement mode type • High speed: tf = 0.03 s (typ.

Contextual Info: NGTB20N120IHRWG Product Preview IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, provides and superior performance in demanding switching applications, and offers

2SK94

Contextual Info: JUNCTION FIELD EFFECT TRANSISTOR 2SK94 AUDIO FREQUENCY AMPLIFIER N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR M IN I MOLD FEATURES PACKAGE DIMENSIONS • High Voltage V q d o > ~ 5 0 v in m illim eters • High ly fs l ly fsl = 12 mS TYP. -S 06 l_ 0.65 iai5

Contextual Info: NGTB50N60L2WG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.

Contextual Info: NGTB75N65FL2WG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.