Untitled
Abstract: No abstract text available
Text: NGTB40N135IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering
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NGTB40N135IHRWG
NGTB40N135IHR/D
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40N120IHR
Abstract: No abstract text available
Text: NGTB40N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering
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NGTB40N120IHRWG
NGTB40N120IHR/D
40N120IHR
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Untitled
Abstract: No abstract text available
Text: NGTB15N135IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering
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NGTB15N135IHRWG
NGTB15N135IHR/D
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Untitled
Abstract: No abstract text available
Text: NGTB15N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering
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Original
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NGTB15N120IHRWG
NGTB15N120IHR/D
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Untitled
Abstract: No abstract text available
Text: NGTB30N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering
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NGTB30N120IHRWG
NGTB30N120IHR/D
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Untitled
Abstract: No abstract text available
Text: NGTB40N135IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering
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Original
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NGTB40N135IHRWG
NGTB40N135IHR/D
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Untitled
Abstract: No abstract text available
Text: NGTB40N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering
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NGTB40N120IHRWG
NGTB40N120IHR/D
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fq sot-23
Abstract: marking FQ transistor MARKING 560 pnp sot23 transistor sot23 MARKING 560 2SA1037 R 560 SOT23
Text: 2SA1037 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Excellent hFE linearity. Complments the 2SC2412 MARKING : FQ, FR, FS Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter
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2SA1037
OT-23
OT-23
2SC2412
-50mA
30MHz
fq sot-23
marking FQ
transistor MARKING 560 pnp sot23
transistor sot23 MARKING 560
2SA1037 R
560 SOT23
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Untitled
Abstract: No abstract text available
Text: NGTB30N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering
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NGTB30N120IHRWG
NGTB30N120IHR/D
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NGTB20N135IHRWG
Abstract: No abstract text available
Text: NGTB20N135IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering
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NGTB20N135IHRWG
NGTB20N135IHR/D
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Untitled
Abstract: No abstract text available
Text: NGTB20N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, provides and superior performance in demanding switching applications, and offers
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Original
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NGTB20N120IHRWG
NGTB20N120IHR/D
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Untitled
Abstract: No abstract text available
Text: NGTB20N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, provides and superior performance in demanding switching applications, and offers
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NGTB20N120IHRWG
NGTB20N120IHR/D
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30n135ihr
Abstract: No abstract text available
Text: NGTB30N135IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, provides superior performance in demanding switching applications, and offers low
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NGTB30N135IHRWG
NGTB30N135IHR/D
30n135ihr
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20N120IHR
Abstract: No abstract text available
Text: NGTB20N120IHRWG Product Preview IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering
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NGTB20N120IHRWG
NGTB20N120IHR/D
20N120IHR
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Untitled
Abstract: No abstract text available
Text: NGTB20N135IHRWG Product Preview IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering
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Original
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NGTB20N135IHRWG
NGTB20N135IHR/D
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PDF
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Untitled
Abstract: No abstract text available
Text: NGTB20N120IHRWG Product Preview IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering
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NGTB20N120IHRWG
NGTB20N120IHR/D
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2SC2412
Abstract: marking FQ 2SA1037 transistor marking fq
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SA1037 SOT-23 TRANSISTOR PNP FEATURES ∙ Excellent hFE linearity. ∙ Complments the 2SC2412 1. BASE 2. EMITTER 3. COLLECTOR MARKING : FQ, FR, FS MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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OT-23
2SA1037
OT-23
2SC2412
-50mA
30MHz
2SC2412
marking FQ
2SA1037
transistor marking fq
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75n60
Abstract: No abstract text available
Text: NGTB75N60FL2WG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.
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NGTB75N60FL2WG
NGTB75N60FL2W/D
75n60
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15j321
Abstract: TRANSISTOR 15J321 2-10R1C GT15J321 RG300A
Text: GT15J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15J321 High Power Switching Applications Fast Switching Applications • Fourth-generation IGBT • Fast switching FS • Enhancement mode type • High speed: tf = 0.03 s (typ.
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GT15J321
15j321
TRANSISTOR 15J321
2-10R1C
GT15J321
RG300A
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Untitled
Abstract: No abstract text available
Text: NGTB20N120IHRWG Product Preview IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, provides and superior performance in demanding switching applications, and offers
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NGTB20N120IHRWG
NGTB20N120IHR/D
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Untitled
Abstract: No abstract text available
Text: NGTB50N60L2WG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.
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NGTB50N60L2WG
NGTB50N60L2W/D
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Untitled
Abstract: No abstract text available
Text: NGTB75N65FL2WG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.
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NGTB75N65FL2WG
NGTB75N65FL2W/D
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2SK238
Abstract: No abstract text available
Text: JUNCTION FIELD EFFECT TRANSISTOR 2SK238 FM TUNER N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR M IN I MOLD FEATURES PACKAGE DIMENSIONS • Low Feedback Capacitance Crss * 0.07 pF TYP. in m illim eter« •H ig h l y fs I l y fs I * 3.5 ms TYP. ABSOLUTE MAXIMUM RATINGS
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2SK238
2SK238
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2SK94
Abstract: No abstract text available
Text: JUNCTION FIELD EFFECT TRANSISTOR 2SK94 AUDIO FREQUENCY AMPLIFIER N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR M IN I MOLD FEATURES PACKAGE DIMENSIONS • High Voltage V q d o > ~ 5 0 v in m illim eters • High ly fs l ly fsl = 12 mS TYP. -S 06 l_ 0.65 iai5
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2SK94
2SK94
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