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    onsemi NGTB40N120IHRWG

    IGBT TRENCH FS 1200V 80A TO-247
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    40N120IHR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 40N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering


    Original     		NGTB40N120IHRWG NGTB40N120IHR/D PDF

    40N120IHR

    Abstract: No abstract text available
    Text: 40N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering


    Original     		NGTB40N120IHRWG NGTB40N120IHR/D 40N120IHR PDF