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    FQL40N50 Search Results

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    FQL40N50 Price and Stock

    Flip Electronics FQL40N50

    MOSFET N-CH 500V 40A TO264-3
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    DigiKey FQL40N50 Bulk 143
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    onsemi FQL40N50

    MOSFET N-CH 500V 40A TO264-3
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    Verical FQL40N50 80 72
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    Newark FQL40N50 Bulk 1
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    Rochester Electronics FQL40N50 80 1
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    Flip Electronics FQL40N50 241
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    Flip Electronics FQL40N50F

    MOSFET N-CH 500V 40A TO-264
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    DigiKey FQL40N50F Tube 100
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    onsemi FQL40N50F

    MOSFET N-CH 500V 40A TO264-3
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    DigiKey FQL40N50F Tube 375
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    TME FQL40N50F 1
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    Flip Electronics FQL40N50F 375
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    Fairchild Semiconductor Corporation FQL40N50F

    Power Field-Effect Transistor, 40A, 500V, 0.11ohm, N-Channel, MOSFET, TO-264AA '
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    Rochester Electronics FQL40N50F 99 1
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    FQL40N50 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FQL40N50 Fairchild Semiconductor 500 V N-Channel MOSFET Original PDF
    FQL40N50F Fairchild Semiconductor 500 V N-Channel MOSFET Original PDF

    FQL40N50 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FRFET TM FQL40N50F 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQL40N50F

    FQL40N50F

    Abstract: No abstract text available
    Text: FRFET TM FQL40N50F 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQL40N50F FQL40N50F

    Untitled

    Abstract: No abstract text available
    Text: FRFET TM FQL40N50F 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQL40N50F

    Untitled

    Abstract: No abstract text available
    Text: QFET TM FQL40N50 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQL40N50

    FQL40N50F

    Abstract: No abstract text available
    Text: FQL40N50F N-Channel QFET FRFET MOSFET 500 V, 40 A, 110 mΩ Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce


    Original     		PDF FQL40N50F FQL40N50F

    Untitled

    Abstract: No abstract text available
    Text: FQL40N50 N-Channel QFET MOSFET 500 V, 40 A, 110 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state


    Original     		PDF FQL40N50 O-264

    Untitled

    Abstract: No abstract text available
    Text: FQL40N50F N-Channel QFET FRFET® MOSFET 500 V, 40 A, 110 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state


    Original     		PDF FQL40N50F

    FQL40N50F

    Abstract: FQL40N50 TO-264 FQL50N40
    Text: Discrete MOSFETs TO-264 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg (nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-264 N-Channel FQL50N40 400 Single 0.075 - - - 160 50 460 FQL40N50 500 Single 0.11 - - - 155 40 460


    Original     		PDF O-264 O-264 FQL50N40 FQL40N50 FQL40N50F 30VDS 10VGS 30VDS. FQL40N50F FQL40N50 TO-264 FQL50N40

    FQL40N50

    Abstract: No abstract text available
    Text: QFET TM FQL40N50 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQL40N50 FQL40N50

    Untitled

    Abstract: No abstract text available
    Text: FRFET TM FQL40N50F 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQL40N50F

    fql40n50

    Abstract: n-channel 250V power mosfet 40A
    Text: FQL40N50 N-Channel QFET MOSFET 500 V, 40 A, 110 mΩ Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce


    Original     		PDF FQL40N50 FQL40N50 n-channel 250V power mosfet 40A

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    FDC6331

    Abstract: fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305
    Text: Discrete Temperature range Software version Revision date 2N7002 SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A 2N7002MTF SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A BS170 TO-92-3 Electrical 25°C to 125°C Orcad 9.1 Mar 22, 2002 BSS123 SOT-23-3


    Original     		PDF 2N7002 2N7002MTF BS170 BSS123 BSS138 BSS84 FDB045AN08A0 FDB2532 FDB3632 FDB3652 FDC6331 fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305

    thermistor KSD201

    Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
    Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™


    Original     		PDF

    500W TRANSISTOR AUDIO AMPLIFIER

    Abstract: IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET P channel 600v 20a IGBT list of n channel power mosfet
    Text: Power for Computing Analog Discrete Interface & Logic Power Solutions for • Conversion · Distribution · Management · Minimization There’s a lot more to power than power management. Optimizing system power in computing applications requires innovative products for power conversion, distribution,


    Original     		PDF Power247TM, 500W TRANSISTOR AUDIO AMPLIFIER IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET P channel 600v 20a IGBT list of n channel power mosfet

    FQPF*7N65C APPLICATIONS

    Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


    Original     		PDF UF4003. UF4004. UF4005. UF4006. UF4007. USB10H. USB1T1102 USB1T11A. vKA75420M W005G FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    500w power amplifier circuit diagram

    Abstract: MBR052L 500w power amplifier circuit diagram schematic schematic diagram Power supply 500w FAN4810 FQL40N50 IRD2 CCM PFC inductor analysis 500w mosfet power amplifier circuit diagram FGK60N6S2D
    Text: www.fairchildsemi.com Application Note 6004 500W Power-Factor-Corrected PFC Converter Design with FAN4810 This application note describes the theory of operation and step-by-step process to design a high performance Power Factor Corrected (PFC) power supply using the FAN4810


    Original     		PDF FAN4810 400VDC 264VAC FAN4810 AN00006004 500w power amplifier circuit diagram MBR052L 500w power amplifier circuit diagram schematic schematic diagram Power supply 500w FQL40N50 IRD2 CCM PFC inductor analysis 500w mosfet power amplifier circuit diagram FGK60N6S2D

    SSP6N60A

    Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
    Text: March 2002 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide March 2002 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . .2


    Original     		PDF SC70-6 OT-23) FDR8321L FDR8521L FDFS2P106A FDFS2P103 FDFS2P102 SSP6N60A IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A

    thermistor KSD201

    Abstract: pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


    Original     		PDF TS-16949 ISO-14001, thermistor KSD201 pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd

    FQPf10N60C

    Abstract: FQPF*10n20c FQPF10N20C FQP17P06 fqpf6n80 FQP630 equivalent FQU17P06 FQPF*5n50c IRF650 FQA90N08
    Text: Discrete BGA BVDSS Min. V Config. 20 RDS(ON) Max (Ω) @ VGS = 10V 4.5V 2.5V 1.8V Qg Typ. (nC) @VGS = 5V Single – 0.027 0.039 – 7 6 1.7 20 Single – 0.018 0.03 – 11 7.5 1.6 FDZ201N 20 Single – 0.018 0.03 – 11 9 2 FDZ209N 60 Single – 0.08@5V


    Original     		PDF FDZ201N FDZ209N FDZ2553N FDZ2553NZ FDZ2551N FDZ7064N SFF9140 FQAF47P06 SSF10N60B SSF7N60B FQPf10N60C FQPF*10n20c FQPF10N20C FQP17P06 fqpf6n80 FQP630 equivalent FQU17P06 FQPF*5n50c IRF650 FQA90N08

    fqp60n06

    Abstract: SSH6N80 spb32N03l SMP60N03-10L SSP80N06A IRF540 application rfp60n06 fsd9933a 2SK790 IRFZ30
    Text: 电子元器件系列 wwww.rf-china.com RF-Micom co.,Ltd EMail:sales@rf-china.com Sale Phone:86-592-5713956 MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 SSH6N80 spb32N03l SMP60N03-10L SSP80N06A IRF540 application rfp60n06 fsd9933a 2SK790 IRFZ30

    Full-bridge LLC resonant converter

    Abstract: LLC resonant converter application note resonant converter for welding AN-9067 Resonant Half-Bridge converter LLC resonant converter transformer fdpf10n50 LLC resonant transformer FDPF10N50FT smps resonant llc
    Text: www.fairchildsemi.com AN-9067 Analysis of MOSFET Failure Modes in LLC Resonant Converter Abstract The trend in power converters is towards increasing power densities. To achieve this goal, it is necessary to reduce power losses, overall system size, and weight by increasing


    Original     		PDF AN-9067 Full-bridge LLC resonant converter LLC resonant converter application note resonant converter for welding AN-9067 Resonant Half-Bridge converter LLC resonant converter transformer fdpf10n50 LLC resonant transformer FDPF10N50FT smps resonant llc