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    FQI19N20 Search Results

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    FQI19N20 Price and Stock

    Rochester Electronics LLC FQI19N20TU

    MOSFET N-CH 200V 19.4A I2PAK
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    DigiKey FQI19N20TU Tube 417
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    FAIRCHILD FQI19N20TU

    FQI19N20TU
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    Verical FQI19N20TU 11,164 461
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    Fairchild Semiconductor Corporation FQI19N20TU

    19.4A, 200V, 0.15ohm, N-Channel Power MOSFET, TO-262AA
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    Rochester Electronics FQI19N20TU 11,170 1
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    FQI19N20 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FQI19N20 Fairchild Semiconductor 200 V N-Channel MOSFET Original PDF
    FQI19N20C Fairchild Semiconductor 200V N-Channel MOSFET Original PDF
    FQI19N20CTU Fairchild Semiconductor 200V N-Channel Advance Q-FET C-Series Original PDF
    FQI19N20CTU Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 19A I2PAK Original PDF
    FQI19N20L Fairchild Semiconductor 200 V Logic N-Channel MOSFET Original PDF
    FQI19N20TU Fairchild Semiconductor 200V N-Channel QFET Original PDF
    FQI19N20TU Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 19.4A I2PAK Original PDF

    FQI19N20 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQB19N20L, FQI19N20L FEATURES BVDSS = 200V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 50nC Typ.


    Original     		FQB19N20L, FQI19N20L FQB19N20L PDF

    FQB19N20

    Abstract: No abstract text available
    Text: FQB19N20 / FQI19N20 N-Channel QFET MOSFET 200 V, 19.4 A, 150 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce


    Original     		FQB19N20 FQI19N20 FQI19N20 PDF

    Untitled

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQB19N20, FQI19N20 FEATURES BVDSS = 200V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 31nC Typ.


    Original     		FQB19N20, FQI19N20 FQB19N20 PDF

    FQB19N20C

    Abstract: FQI19N20C
    Text: FQB19N20C/FQI19N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		FQB19N20C/FQI19N20C FQB19N20C FQI19N20C PDF

    Untitled

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQB19N20L, FQI19N20L FEATURES BVDSS = 200V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 50nC Typ.


    Original     		FQB19N20L, FQI19N20L FQB19N20L PDF

    electronic ballast kW power

    Abstract: FQB19N20C FQI19N20C
    Text: QFET FQB19N20C/FQI19N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		FQB19N20C/FQI19N20C FQB19N20C/FQI19N20C electronic ballast kW power FQB19N20C FQI19N20C PDF

    Untitled

    Abstract: No abstract text available
    Text: QFET FQB19N20C/FQI19N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		FQB19N20C/FQI19N20C FQB19N20C/FQI19N20C PDF

    19n20c

    Abstract: 19n20 FQB19N20CTM
    Text: FQB19N20C/FQI19N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		FQB19N20C/FQI19N20C FQB19N20C FQB19N20CTM 19n20c 19n20 PDF

    fairchild power mosfet

    Abstract: No abstract text available
    Text: FQB19N20L / FQI19N20L N-Channel QFET MOSFET 200 V, 21 A, 140 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to


    Original     		FQB19N20L FQI19N20L FQI19N20L fairchild power mosfet PDF

    ET110

    Abstract: No abstract text available
    Text: FQB19N20C / FQI19N20C N-Channel QFET MOSFET 200 V, 19 A, 170 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to


    Original     		FQB19N20C FQI19N20C FQI19N20C ET110 PDF

    FDC6331

    Abstract: fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305
    Text: Discrete Temperature range Software version Revision date 2N7002 SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A 2N7002MTF SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A BS170 TO-92-3 Electrical 25°C to 125°C Orcad 9.1 Mar 22, 2002 BSS123 SOT-23-3


    Original     		2N7002 2N7002MTF BS170 BSS123 BSS138 BSS84 FDB045AN08A0 FDB2532 FDB3632 FDB3652 FDC6331 fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305 PDF

    thermistor KSD201

    Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
    Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™


    Original     		PDF

    FLMP SuperSOT-6

    Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
    Text: 2003 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide 2003 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1


    Original     		SC70-6 SC75-6 SuperSOTTM-3/SOT-23 Power247TM, FLMP SuperSOT-6 Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80 PDF

    FQPF*7N65C APPLICATIONS

    Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


    Original     		UF4003. UF4004. UF4005. UF4006. UF4007. USB10H. USB1T1102 USB1T11A. vKA75420M W005G FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237 PDF

    FQB19N20TM

    Abstract: No abstract text available
    Text:     QFET                                               !  


    Original     		FQI19N20TU O-262 FQB19N20TM PDF

    Untitled

    Abstract: No abstract text available
    Text:     QFET                                               !


    Original     		FQI19N20LTU O-262 PDF

    SSI5N60A

    Abstract: FQI13N06 FQI20N06 FQI30N06 FQI50N06 FQI55N06 FQI65N06 FQI85N06 HUF75333S3 HUF75345S3
    Text: Discrete MOSFET TO-262 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-262(I2PAK) N-Channel ISL9N303AS3 30 Single 0.0032 0.005 - - 61 75 215 HUF75345S3 55 Single 0.007 -


    Original     		O-262 O-262 ISL9N303AS3 HUF75345S3 HUF75333S3 FQI85N06 FQI65N06 FQI55N06 FQI50N06 FQI30N06 SSI5N60A FQI13N06 FQI20N06 FQI30N06 FQI50N06 FQI55N06 FQI65N06 FQI85N06 HUF75333S3 HUF75345S3 PDF

    Untitled

    Abstract: No abstract text available
    Text:    October 2008 QFET                                              !


    Original     		FQB19N20L FQI19N20L PDF

    SSP6N60A

    Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
    Text: March 2002 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide March 2002 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . .2


    Original     		SC70-6 OT-23) FDR8321L FDR8521L FDFS2P106A FDFS2P103 FDFS2P102 SSP6N60A IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A PDF

    MC0628R

    Abstract: mc0628 MC0628R replacement FAIRCHILD SEMICONDUCTOR Fairchild cross KA3846 FDD8896 "drop-in replacement" FQPF3N60C FQP50N06 equivalent FDS8884
    Text: Discontinued Product s 4296_ST42091 5092_F50188E 5FS1_NB5F009 73282 74ABT646CMSA 74ABT646CMSAX 74ABT646CMTC 74ABT646CSC 74AC251SJ 74AC299SJX 74AC74CW 74ACT151SJ 74ACT16646SSC 74ACTQ08SJX Replacement Product(s) NONE NONE FDS3580 None 74ABT646ADB 74ABT646ADB


    Original     		ST42091 F50188E NB5F009 74ABT646CMSA 74ABT646CMSAX 74ABT646CMTC 74ABT646CSC 74AC251SJ 74AC299SJX 74AC74CW MC0628R mc0628 MC0628R replacement FAIRCHILD SEMICONDUCTOR Fairchild cross KA3846 FDD8896 "drop-in replacement" FQPF3N60C FQP50N06 equivalent FDS8884 PDF

    MC0628R

    Abstract: 40373 74hc14n equivalent 4046 application note philips HCF4060BE HCF4017BE SN74121 application note MC74HC373DW mc0628 HCF4053BE
    Text: R E L I A B L E . L O G I C . I N N O V A T I O N . Logic Cross-Reference Logic Cross-Reference 2003 Texas Instruments Printed in the U.S.A. by Texoma Business Forms, Durant, Oklahoma Printed on recycled paper. SCYB017A NEW First Revision Logic Cross-Reference


    Original     		SCYB017A T74ALVC32374 74CBTLV16211 SN74CBTD16211 SN74SSTV16859 SN74CBTLV16211GRDR SN74ALVC16245AGRDR -SN74SSTV16859GKER MC0628R 40373 74hc14n equivalent 4046 application note philips HCF4060BE HCF4017BE SN74121 application note MC74HC373DW mc0628 HCF4053BE PDF

    Untitled

    Abstract: No abstract text available
    Text:    October 2008 QFET                                              !  


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQB19N20, FQI19N20 FEATURES BV qss = 200V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 31 nC Typ.


    OCR Scan     		FQB19N20, FQI19N20 PDF

    Untitled

    Abstract: No abstract text available
    Text: FQB19N20L, FQI19N20L QFET N-CHANNEL FEATURES BV qss = 200V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 50nC Typ.


    OCR Scan     		FQB19N20L, FQI19N20L B19N20L PDF