FP10W Search Results

FP10W90

Abstract: 2SK1686
Contextual Info: H V X v ' J - X /t^ -M O S F E T HVX SERIES POWER MOSFET O U T L IN E D IM E N S IO N S 2SK 1686 FP10W90 900v 10a fcfàm • R A TIN G S ■ $ I Î !Î,:S t^ 5 È Î& A b s o lu te M axim u m R a tin g s Èü M Ite m ffi-fà-'im-iæ. S to r a g e T e m p e ra tu r e

Contextual Info: V X - n ^ U - X 7 t 7 - MOSFET s t& VX-H SERIES POWER MOSFET O U T L IN E DIM ENSIONS 2SK2190 FP10W50VX2 5 0 0 v 1 0 I ¡¡È fë li a RATINGS Absolute Maximum R atings II Item s n- iE ft sfe Symbol s C onditions + Y* KU' f ^ • V — X D rain -S o u rce Voltage

2SK1696

Abstract: K1696 power diode 500v 10A F3302 FP10W50C 1501 i173
Contextual Info: V X '> '; - X /\°7 -M 0 S F E T ÍÜ Í VX Series Power MOSFET OUTLINE DIMENSIONS 2SK1696 [FP10W50C 500V 10A • A * S * C is s ) • a c i o o v * A Ä f f iZ 'i- "j ? y -7 m m •7 .- T • 'l'V A - 5 ' • Æ fê fl RATINGS Absolute Maximum Ratings Item

k1523

Abstract: 2SK1523 FP10W50 k1523 diode
Contextual Info: V X '> y -X /\°7 -M 0 S F E T V X S e rie s P o w er M O SFET imttfem 2SK1523 OUTLINE DIMENSIONS [FP10W50] 500V 10A • A * S * Ciss 9 % ' Æ iK ff î •A C 1O O V *A tHOT,-^ ' y ? y y W M •x -f • - fV K - í' • Æ të ft RATINGS Absolute Maximum Ratings

FP10W50VX2

Abstract: 2SK2190
Contextual Info: SHINDENGEN VX-2 Series Power MOSFET 2SK2190 FP10W50VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : ITO-3P (Unit : mm) 500V 10A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.

2SK1696

Abstract: FP10W50A 2sk16
Contextual Info: V X î / ' J - X / t 7 —MOSFET V X SERIES POWER MOSFET • O U T L IN E D IM E N S IO N S 2SK1696 FP10W50A 500v10a ■ R A T IN G S ■ A b s o lu te M axim u m R a tin g s •Öl i IE S to ra g e T e m p e ra tu re ~i~■V''t' ) ^ )&. C h an n el T e m p e ra tu r e

2SK1523

Abstract: 5503 MOSFET J3302 k1523 500V10A FP10W50
Contextual Info: V X v ' J - X A 7 —MOSFET s a x -r V X SERIES POWER MOSFET • O U T L IN E D IM E N S IO N S Case ! IT 0 -3 P 2SK1523 iK n±o.3 FP10W50 5.5±03 500V10A 3.3±03 0.7±Q-2 [U n it ' mm] ■ Æ fê iî R A T IN G S A b s o lu te M a x im u m R a tin g s m Item s

Contextual Info: H V X - Ï Ï ^ U - X J V 7 - MOSFET HVX-n SERIES POWER MOSFET • \f->£H O U T L IN E D IM E N S IO N S 2SK2677 FP10W90HVX2 900V 10A I R A TIN G S l$ S ÌÌ ;* ;5 è fè m A b s o lu te Item M a x im u m s R a tin g s (T c = 2 5 °C ) 12 Symbol m C onditions

K1696

Abstract: EM 5103 2SK1696 FP10W50C current source 5A ac
Contextual Info: VXvU-X /\o7 - M 0 S F E T VX S eries Pow er MOSFET X>/\>ZS > h§ + OUTLINE DIMENSIONS 2SK1696 Case : ITO-3P [FP10W 50C] [U n it .* m m ] 15.0 ±°3 500V 10A 5.5103 j 3.3 ±02 n-y D a te c o d e •A£j?5Ä Ciss ÖVJ\£UV □d ‘22 K 1696 ia E IA J N o.

2SK2677

Abstract: FP10W90HVX2
Contextual Info: SHINDENGEN HVX-2 Series Power MOSFET 2SK2677 N-Channel Enhancement type OUTLINE DIMENSIONS FP10W90HVX2 Case : ITO-3P (Unit : mm) 900V 10A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.

FP10W50VX2

Abstract: 2SK2190 500V10A
Contextual Info: SHINDENGEN VX-2 Series Power MOSFET 2SK2190 FP10W50VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case Case : E-pack ITO-3P (Unit : mm) 500V 10A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.

Contextual Info: H V X v U -X A7 -MOSFET H V X SERIES POWER MOSFET • O U T L IN E D IM E N S IO N S 2SK1686 FP10W 90 900v10a ■ R A TIN G S ■ ÎÊ 2 \H I^ : ÎÜ Î& A b s o lu te M axim um R a tin g s « Ite m g y- m & Sym b ol # s C o n d itio n s » R a tin g s t

2sk2677

Abstract: FP10W90HVX2
Contextual Info: SHINDENGEN HVX-2 Series Power MOSFET 2SK2677 N-Channel Enhancement type OUTLINE DIMENSIONS FP10W90HVX2 Case : ITO-3P 900V 10A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast.

2SK1686

Abstract: AC240V FP10W90
Contextual Info: H V X v'J-X /\°7 — MOSFET HVX Series Power MOSFET OUTLINE DIMENSIONS 2SK1686 FP10W90 900V 10A •A *S* (Ciss) tf/j\SLïo ?t!C -tf□ I U 7 X B e * V f f iÖ W • A C 2 • Æ fê ü ^ IA J ^ U 4 " j j - y y n n RATINGS Absolute Maximum Ratings M SffiSK

2SK2190

Abstract: FP10W50VX2
Contextual Info: SHINDENGEN VX-2 Series Power MOSFET 2SK2190 FP10W50VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : ITO-3P 500V 10A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast.

BFW 10 fet

Abstract: BFW 10 A FET
Contextual Info: V X -H » U -X r t ö - MOSFET VX-n SERIES POWER MOSFET W féT Î-âs0 O U T L IN E D IM E N S IO N S 2SK2190 F P 1 0 W 5 0 V X 2 500V 10a • fëfàm R A TIN G S ■ A b s o lu te Maxim um R a tin g s m Item s K # m Symbol fSffäm . Storage Temperature

Contextual Info: V X ^ 'J - X /X 9-M 0S FE T V X SERIES POWER MOSFET • O U T L IN E D IM E N S IO N S 2SK1696 FP 10W 50C 500V10A ■ Æ fê ü R A TIN G S ■ A b s o lu te M axim um R a tin g s m Ite m s IB - fr Î.nnJjaL S to ra g e T e m p e ra tu re "V''f' ^ C h an n el T e m p e ra tu re

2SK1395

Abstract: 2sk2006 2SK1539 2SK1685
Contextual Info: E IA J No. SM D jj&no v 2SK1861 2SK1931 2SK1194 2SK1195 2SK1672 2SK1533 2SK2005 2SK2006 LVX S eries 2SK1391 2SK1392 2SK1393 2SK1394 2SK1395 2SK1396 2SK1397 2SK1810 2SK1811 2SK1812 VX S e rie s 2SK1672 2SK1244 2SK1245 2SK1246 2SK1247 2SK1693 2SK1694 2SK1695

2SK1523

Abstract: FP10W50 tccc
Contextual Info: VXvU-X /\° 7 -M 0 S F E T VX Series Power MOSFET OUTLINE DIMENSIONS 2SK1523 C F 5 P 1 W V 5 1 ] A • A C i s s • 7 ,- i • A C 10 0 V * A * 7 . 'T y - > ? > ^ 5 Ä © B E S jg • 'T V A '- i' RATINGS Absolute Maximum Ratings « & ie # Symbol i

Contextual Info: RATINGS {=1 « EIAJ No. 2SK2177 2SK2178 2SK2179 2SK2180 2SK2181 2SK2182 2SK2183 2SK2184 2SK2185 2SK2186 2SK2187 2SK2188 2SK2189 2SK2190 2SK2191 2SK2192 2SK2193 2SK2194 2SK2195 2SK2196 2SK2197 2SK2198 Absolute Maximum Ratings Tch Vdss Vgss I d Pt DC Tc=25°C

complementary MOSFET 2sk

Abstract: transistor+2sk 2SK series 2SK 20a 600v 2sk 1181 2SK 150A 2SK+series
Contextual Info: SHINDENGEN Power MOSFET HVX-2 series Shindengen Electric Mfg.Co.,Ltd. Tokyo, Japan. 021^307 □□□2330 Tflû SHINDENGEN Power MOSFET Products and Their Applications s. VDSS V Input 60 150 DC12V DC24V 180 200 230 250 350 300 500 600 700 900 DC48V to 72V

2SK2188

Abstract: F10W90HVX2 2SK2669 2SK2196 F20w 2SK2177 FP7W90HVX2 2SK2182
Contextual Info: ¡Ê fc -S lïi ü « R A T IN G S Teh V d s s V g s s Id DC EIA J No. Type No. «SlWflHÌ T c = 25"C E lectrical C h aracteristics Absolute Maximum Ratings [•c] [V ] [V ] P t R d s ON (max) Tc=25°C V g s = 1 0 V Id Iti C iss (typ) ton toff (typ) (typ)

2sk2677

Contextual Info: H V X - iïv 'J —X A 9 - M 0 S F E T H V X -n SERIES POWER MOSFET N - ^ jp ^ k x > y \ > 7 .> > s s i • 2SK2677 O U T L IN E D IM E N S IO N S Case ! IT 0 - 3P 5.5 ■o s (F P 1 0 W 9 0 H V X 2 rr 900v 10a L3-3: 0.3 [U n it • î ■ R A TIN G S ■

Contextual Info: V X v U - X A 7 —MOSFET V X SERIES POWER MOSFET O U T L IN E D IM E N S IO N S 2SK1523 FP 10W 50 5 0 0 V • Æ fê * 1 0 a R A TIN G S A b s o lu te M axim um R a tin g s m Item § IB -§■ Symbol M 4k # Conditions fé Ratings tt Unit Storage Temperature