common anode 7-segment display
Abstract: 4 units 7-segment LED display module common anode 7 segment logic gates 3 x 4 keypad to 7 segment sequential logic circuit experiments 7 SEGMENT DISPLAY basic CIRCUIT "7 Segment Display" datasheet of ic 555 IC 555
Text: LP-2600 SMART LOGIC DESIGN EXPERIMENTAL LAB Features ● System built-in experimental unit of basic logic gates, assembled logic and digital logic units. ● No need TTL and CMOS devices to do experimental circuits. Save amount of materials and time to solder devices.
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LP-2600
common anode 7-segment display
4 units 7-segment LED display module
common anode 7 segment
logic gates
3 x 4 keypad to 7 segment
sequential logic circuit experiments
7 SEGMENT DISPLAY basic CIRCUIT
"7 Segment Display"
datasheet of ic 555
IC 555
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2N2222 Cce capacitance
Abstract: 2N2222 transistor output curve OPTOCOUPLER 4-PIN application note theory phototransistor Pin layout for a 2N2222 transistor SFH6721 SFH6136 equivalent of an optocoupler SFH6136 SFH6343
Text: Application Note 83 Vishay Semiconductors Optocoupler Common Mode Transient Immunity CMTI Theory and Practical Solutions INTRODUCTION This application note discusses the common mode transient immunity (CMTI) properties of optocouplers. It covers phototransistor output and optically coupled logic gates.
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Original
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24-Nov-03
2N2222 Cce capacitance
2N2222 transistor output curve
OPTOCOUPLER 4-PIN application note
theory phototransistor
Pin layout for a 2N2222 transistor
SFH6721
SFH6136 equivalent
of an optocoupler
SFH6136
SFH6343
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UC8906
Abstract: uc3906 Battery 24V 24V UC3906 accu charger UC2906 UC3906 UC3906 application note 6v led driver sealed lead-acid battery charger UC3906 Lead-Acid 6V
Text: IC provides optimal charging cycles A battery-charier IC can help reduce the cost and effort of implementing optimal charge and hold cycles for lead-acid batter ies. By understanding the IC }s basic charg ing principles, as well as the chip’s auxiliary
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UC3906,
UC8906
uc3906 Battery 24V
24V UC3906
accu charger
UC2906 UC3906
UC3906 application note
6v led driver
sealed lead-acid battery charger
UC3906
Lead-Acid 6V
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L2504
Abstract: No abstract text available
Text: TYPES ECL2500 THRU ECL2505, ECL2511 EMITTER-COUPLED-LOGIC GATES ECL INTEGRATED CIRCUITS n h c < ECL2500 SERIES E M ITTER -C O U PLED -LO G IC ECL BASIC G ATES FOR A PP L IC A T IO N IN U L TR A -H IG H -SPEED D IG IT A L SYSTEMS — m ? M O tn o I description
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ECL2500
ECL2505,
ECL2511
L2500
L2504
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N8815
Abstract: 8815 N8885 N8875 S8815 8815A 8885A S8885 S8875 8875A
Text: S IG N E T IC S DCL 8815 DUAL 4-INPUT NOR GATE 8875 TRIPLE 3-INPUT NOR GATE 8885 QUAD 2-INPUT NOR GATE NTiGBATte» CIRCUITS BASIC C IR C U IT SCHEMATIC The 8815, 8875 and 8885 gates p e r f o r m the logic NOR function for p ositive logic the logic "ONE" is
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8815J
8875J
N8815
8815
N8885
N8875
S8815
8815A
8885A
S8885
S8875
8875A
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PDF
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t2d 64
Abstract: lu1414 fdn 156 MB631XXX LU18 mb633
Text: January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE AU Series CMOS Gate Arrays DESCRIPTION The AU series of 1.2 Jim CMOS gate arrays, available in eight device types with from 10K to 100K gates, achieves the ultra fast speed of 0.6 ns per gate. Thanks to the channel-free structure of the AU gate array, AU basic cells can be used for logic cells,
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ECL2500
Abstract: ECL2501 ECL2502 ECL2503 ECL2504 ECL2505 ECL2511 triple 2-input or MV-13 BIAS ScansUX1009
Text: TYPES ECL2500 THRU ECL2505, ECL2511 EMITTER-COUPLED-LOGIC GATES ECL INTEGRATED CIRCUITS TYPES ECL2500 THRU ECL2505, ECL2511 BULLETIN NO. DL-S 6911236, OCTOBER 1969 ECL2500 S E R IE S EM ITTER-COUPLED-LOGIC ECL BASIC G A TES FOR APPLICATION IN ULTRA-HIGH-SPEED D IG ITA L SYSTEM S
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ECL2500
ECL2505,
ECL2511
ECL2501
ECL2502
ECL2503
ECL2504
ECL2505
triple 2-input or
MV-13 BIAS
ScansUX1009
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PDF
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84 LCC
Abstract: g1140 IC TTL 7400 input leakage current
Text: Tem ic MG1RT Semiconductors MG1RT Sea of Gates Series 0.6 Micron CMOS Description The MG1RT series is a 0.6 micron 3 metal layers, array based, CMOS product family offering a new frontier in integration and speed. Several arrays up to 500k cells cover all system integration needs. The MG1RT is
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ac cdi schematic diagram
Abstract: dc cdi schematic diagram cdi schematic cdi circuit diagram California Devices cdi schematics equivalent transistor bc 107 off grid inverter schematics cdi wiring diagram "california devices"
Text: cl o cot S '/ t ó CALIFORNIA DEVICES INC. /¿vi o^ f DLM SERIES HCMOS Gate Arrays 000935 April 1985 PRODUCT FEATURES DLM SERIES FAMILY ORGANIZATION ^ • High perform anc^ 3 ^ ^ silicon gate HC^MOSJechnology. P art N um ber ■ From 210 to 10,152 equivalent 2-input gates.
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pi880
D-6050
5M85/Printed
ac cdi schematic diagram
dc cdi schematic diagram
cdi schematic
cdi circuit diagram
California Devices
cdi schematics
equivalent transistor bc 107
off grid inverter schematics
cdi wiring diagram
"california devices"
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PDF
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B634X
Abstract: lu1414 Standard TTL AOI Dual 2-Wide 2-Input LU18 c17b2 H8E0
Text: FUJITSU MICROELECTRONICS 31E I El 3 7 i n 7 ba ÜG13>435 b B F M 0 T - n - l - D January 1990 Edition 1.1 P R O D U C T PR OFILE AU Series CMOS Gate Arrays DESCRIPTION Tha AU series of 1 .2 |im CMOS gate arrays, available in eight device types with from 1 0 K to 100K gates, achieves the ultra fast
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STP3010PGA
Abstract: STP3010 G15sb
Text: STP3010 S un M i c r o e l e c t r o n i c s July 1997 TGX DATA SHEET TurboGX Graphics Accelerator D e s c r ip t io n The STP3010 em ploys over 128,000 gates and im plem ents an extended superset of previous GX architectures. This chip provides an integral SBus interface, VRAM video random -access m emory controller, a high-performance math engine, plus a high-performance rendering (or draw ing) engine. A complete graphics
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STP3010
STP3010
STP3010PGA
223-Pin
STP3010PGA
G15sb
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PDF
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mb633
Abstract: QFP196 mb631 SQF-P25 QFP-1002 MB63XXXX
Text: RPR 2 1993 August 1990 Edition 4.0 DATA SHEET f u j Ît s u : MB63XXXX AU SERIES CMOS GA TE ARRA YS_ DESCRIPTION The AU series of 1 2|j.m CMOS gate arrays, available in 8 types with from 10K to 100K gates, has ultra fast speed of 0.6ns per gate. Thanks to its channel-free structure, basic cells packed are usable for logic cell as well as memory cell, or wiring areas in order to achieve the desired
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MB63XXXX
PV0077-908A4
mb633
QFP196
mb631
SQF-P25
QFP-1002
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PDF
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IC 7000 AND gate
Abstract: No abstract text available
Text: AN U = n*A\ u u □ □ □ □ u □ □ Altera Corporation H ig h -d en sity , h ig h -s p e e d C M O S E P L D s with s ec o n d -g e n era tio n Multiple Array MatriX M A X architecture C o m p lete E P L D family with logic density up to 20,000 typical gates
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15-ns
IC 7000 AND gate
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MQFPL160
Abstract: No abstract text available
Text: T em ic MG2RT Semiconductors Radiation Tolerant 0.5-jiim CMOS Sea-of-Gates 100k Rad Low Dose Rate Introduction The MG2RT series is a 0.5 micron, array based, CMOS product family. Several arrays up to 700k cells cover all system integration needs. The MG2RT is manufactured
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OAI22
MQFPL160
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PDF
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shiftregisters
Abstract: EP910 altera TTL library 74LS series logic gates 74LS EP1810 EP1810-45 EP610 PLE40 altera logicaps TTL library
Text: EP1810 Y 7 \ m HIGH PERFORMANCE 4 8 MACROCELL EPLD m 10 I U FEATURES GENERAL DESCRIPTION • Erasable, User-Configurable LSI circuit capable of implementing 2100 equivalent gates of conven tional and custom logic. • Speed equivalent to 74LS TTL with 33 MHz clock
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dc cdi schematic diagram
Abstract: Ac cdi schematic diagram California Devices DM30ND cdi schematic level shifter . CMOS to TTL cdi schematic diagram cdi schematics TIL 81 transistor BC 945
Text: •CALIFORNIA DEVICES INC b4 J CD D e | 1AEST3E 000D334 1 | 3 T-42-11^09 DLM SERIES HCMOS Gate Arrays CALIFORNIA DEVICES INC. April 1985 PRODUCT FEATURES DLM SERIES FAMILY ORGANIZATION • High performance 3 /jm silicon gate HCMOS technology, ■ From 210 to 10,152 equivalent 2-input gates.
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T-42-11
D-6050
5M85/Prlnted
dc cdi schematic diagram
Ac cdi schematic diagram
California Devices
DM30ND
cdi schematic
level shifter . CMOS to TTL
cdi schematic diagram
cdi schematics
TIL 81
transistor BC 945
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PDF
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MG1140E
Abstract: 000GATES
Text: Tem ic Array MATRA MHS MG1RT : Radiation Tolerant 0.6|im CMOS Sea Of Gates Description TEMIC / MATRA MHS is the first European supplier for space application submicronic radiation tolerant CMOS ASICs. This is why TEMIC keeps offering a fluent way of moving up and down the quality and the space/radiation
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EP1810JC-35
Abstract: programming manual EP910 EP1810LC-35 OLC-45 EP1810JC35 programming manual EPLD EP1810LI-45 EP1810JC EP1810I Erasable Programmable Logic Device
Text: EP1810 HIGH-PERFORMANCE 48-MACROCELL ERASABLE PROGRAMMABLE LOGIC DEVICE EPLD D3232. FEBHUARY 1989-REVISED AUGUST 1989 CHIP-CARRIER PACKAGE Erasable, U ser-Configurable LSI Circuit C apable of Implementing 2100 Equivalent Gates of Conventional and Custom Logic
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EP1810
48-MACROCELL
D3232.
1989-REVISED
33-MHz
68-pin
28Cll
EP1810JC-35
programming manual EP910
EP1810LC-35
OLC-45
EP1810JC35
programming manual EPLD
EP1810LI-45
EP1810JC
EP1810I
Erasable Programmable Logic Device
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PDF
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EP1810JC-45
Abstract: logicaps schematic capture manual programming manual EP910 Flip flop JK cmos
Text: EP1810 HIGH-PERFORMANCE 48-MACROCELL ERASABLE PROGRAMMABLE LOGIC DEVICE EPLO D3232, FEB RU ARY 1 9 8 9 -R E V IS E D AU GU ST 1989 • Erasable, User-Configurable LSI Circuit Capable of Implementing 2100 Equivalent Gates of Conventional and Custom Logic
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EP1810
48-MACROCELL
D3232,
33-MHz
EP1810JC-45
logicaps schematic capture manual
programming manual EP910
Flip flop JK cmos
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PDF
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TEMIC PLD
Abstract: No abstract text available
Text: Tem ic S e m i c o n d u c t o r s ASIC Solutions The Ultimate Integration Functions: Packaging: • Sensors • Hybrid • Computation • Surface mount • Communicate/interface • Plastic/ceramic • Memory • Control • Power Methodologies: • Sea-of-gates
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Untitled
Abstract: No abstract text available
Text: CLA200 Series M IT E L CMOS Gate Arrays Advance Information SEMICONDUCTOR DS4812 -1 .3 July 1997 IN TR O D U C TIO N The CLA200 Series Arrays from Mitel Semiconductor offer designers the capability to integrate designs of more than 2 million gates. There are 14 fixed arrays optimised for low to
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CLA200
DS4812
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SBDIP dg181bp
Abstract: DG190 DG187 EM 182AA dg184bp DG182 dg181ap DG181BP DG187BP DG190BP
Text: DG181 thru DG1Q1 High-Speed Drivers with JFET Switch Description The DG181 thru DG191 series of analog gates consist of 2 or 4 N-channel junction-type field-effect transistors JFET designed to function as electronic switches. Level-shifting drivers enable low-level inputs (0.8V to 2V) to control the
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DG181
DG191
10MHz,
SBDIP dg181bp
DG190
DG187
EM 182AA
dg184bp
DG182
dg181ap
DG181BP
DG187BP
DG190BP
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PDF
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MCT12K
Abstract: MC10K
Text: T em ic Arrays: MG1RT S e m i c o n d u c t o r s Radiation-Tolerant 0.6- |xm CMOS Sea-of-Gates Description TEMIC/Matra MHS is the first European supplier for space application submicronic radiation tolerant CMOS ASICs. This is why TEMIC keeps offering a wide range of quality
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5fibfl45b
10-May-96
MCT12K
MC10K
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PDF
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SC472
Abstract: CG21103 CG21403 CG21153 mbcg CG21303 CG21753 Mbcg21153 CG21203 QFP-208 fujitsu
Text: January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE CG21 Series 0.8-micron CMOS Gate Arrays DESCRIPTION The CG21 series of 0.8 n m CMOS gate arrays are currently available in five device types with from 3 0K to 100K gates. Three more CG21 arrays, ranging from 10Kto 20Kgates, are now underdevelopm ent. These arrays achievethe u ltrafast speed of 0.37 ps per
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10Kto
20Kgates,
SC472
CG21103
CG21403
CG21153
mbcg
CG21303
CG21753
Mbcg21153
CG21203
QFP-208 fujitsu
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