FO57D Search Results

RZ2731B60W

Abstract: tRANSISTOR 2.7 3.1 3.5 GHZ cw
Contextual Info: • 3 3 - 1 3 RZ2731B60W PHILIPS INTERNATIONAL SbE D 7110fl2ti 004Li57ö OflS M P H I N PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended fo r use in a common-base class-C broadband pulse power am plifier w ith a frequency range o f 2.7 to 3.1 GHz.

Contextual Info: N AMER PHI L I P S / D I S CR E T E bbSBTBl 0015531 h □ hE D RZ2731B45W r-s s - 3 PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C broadband pulse power amplifier w ith a frequency range o f 2,7 to 3,1 GHz.

Philips CD 303

Abstract: PZB16040U
Contextual Info: « N AUER P H IL IP S / D IS C R E T E U t V h L U P M t N I OLE ]> • U À IA bbSBTBl O D IS IS T 2 ■ " ■ PZB16040U This data sheet contains advance information and specifications are subject to change w ithout notice. J V r-s 3 ~ n M IC R O W A V E PO W ER TRA N SISTO R

RZ2833B45W

Contextual Info: N AMER P H I L I P S / D I S C R E T E ObE D _1_L bbSB^l • 0015551 1 RZ2833B45W r- ss-is PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor intended for use in a common-base ciass-C broadband pulse power amplifier with a frequency range of 2,8 to 3,3 GHz.

7Z24132

Contextual Info: I N AflER P H I L I P S / D I S C R E T E developm ent ObE D bb53T31 0015147 b • data PZ2327B15U T his data sheet contains advance Inform ation and specifications are subject to change w ithout notice. T -c 3 % - o * f M ICRO W AVE P O W E R T R A N SIST O R

MX0912B250Y

Abstract: RV2833B5X RV3135B5X RX1214B150W RX1214B300Y RZ1214B125Y RZ1214B35Y RZ1214B65Y RZ2731B16W MRB11175Y
Contextual Info: N AMER P H I L I P S / D I S C R E T E 5SE 3> • bbSH^! OOltiSBl 0 ■ T'-J3 3 “' ^ / Power Devices 53 MICROWAVE TRANSISTORS TYPE NO. PACKAGE OUTLINE f GHz Vcc (Vi ' U m @ DUTY CYCLE I (%> . Pi. (W> A - ; VC (%) RADAR PULSED L-BAND RZ1214B35Y FO-57C 1.2 - 1.4

Contextual Info: PZ2327B15U PHILIPS INTERNATIONAL SbE D • 711Dfl2b DDMb4flfl 043 ■ P H I N 7 MICROWAVE POWER TRANSISTOR NPN silicon epitaxial microwave power transistor, intended fo r use in a common-base, class-C broad­ band power am plifier, operating in the 2.3 to 2.7 GHz frequency range.

Contextual Info: • 3 3 -1 3 RZ2731B60W IX PH IL IP S INTERNATIONAL SbE D ■ 711GflSb OD4tiS7ö GAS H P H I N PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended fo r use in a common-base class-C broadband pulse power am plifier w ith a frequency range o f 2.7 to 3.1 GHz.

transistor w 431

Contextual Info: T Philips Components RZ2731B32W Data sheet status Product specification data of Issue June 1992 NPN silicon planar epitaxial microwave power transistor PHILIPS INTERNATIONAL SbE D • 711Dfi2b OOHbSbb 3b3 I IPHIN DESCRIPTION AP P LIC A T IO N FEATU R ES • Interdigitated structure; high

PZ2327B15U

Contextual Info: PZ2327B15U PHILIPS INTERNATIONAL SbE D • 711DflSb DDMb4flfl QM3 ■ P H I N 7 ^ 3 3 -0 ? MICROWAVE POWER TRANSISTOR NPN silicon epitaxial microwave power transistor, intended fo r use in a common-base, class-C broad­ band power am plifier, operating in the 2.3 to 2.7 GHz frequency range.

Contextual Info: i_L N AMER P H I L I P S / D I S CR E T E bbSBTBl 0015251 1 □ bE D T RZ2833B45W PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor intended for use in a common-base class-C broadband pulse power amplifier with a frequency range of 2,8 to 3,3 GHz.

Contextual Info: N AMER P H I L I P S / D I S C R E T E OLE D bbSBTBl OOISIST 2 DtV tLU H M tN I UAIA PZB16040U T his data sheet contains advance inform ation and specifications are subject to change w ithout notice. y v r - 3 3 - H M ICRO W AVE POW ER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C

Contextual Info: 7 ^ 3 3 - 7 3 Philips Components Data sheet status Product specification date o f Issue June 1992 RZ2731B48W NPN silicon planar epitaxial microwave power transistor 711002b 0Ü4L572 fc.L.7 SbE D PHILIPS INTERNATIONAL FEATU R ES A P P LIC A T IO N • Interdigitated structure; high

1S274

Abstract: RZ3135B50W
Contextual Info: N AUER PHILIPS/DISCRETE ^ 53=131 0015273 ObE D c RZ3135B50W T - 3 5 - »3 PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C broadband pulse power amplifier with a frequency range o f 3,1 to 3,5 GHz.

Contextual Info: N AUER PHILIPS/DISCRETE bbS3T31 0015273 0 ObE » RZ3135B50W T -33-13 PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended fo r use in a common-base class-C broadband pulse power amplifier w ith a frequency range o f 3,1 to 3,5 GHz.

Contextual Info: N AUER PHILIPS/DISCRETE ObE D bbSB'm 0015257 2 RZ2833B60W T -3 -3 - \ ^ PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended fo r use in a common-base class-C broadband pulse power amplifier w ith a frequency range o f 2,8 to 3,3 GHz.

Contextual Info: N ANER PHILIPS/DISCRETE D E V E L O P M E N T DATA □bE D • bbS3T31 0015147 b ■ PZ2327B15U This data sheet contains advance information and specifications are subject to change without notice. T-c 3 % - Q I MICROWAVE POW ER TRANSISTOR NPN silicon epitaxial microwave power transistor, intended for use in a common-base, class-C broad­

Contextual Info: N AMER PHILIPS/DISCRETE DbE D • ^ 5 3 1 3 1 QD15E37 7 A RZ2731B60W PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended fo r use in a common-base ciass-C broadband pulse power amplifier w ith a frequency range o f 2,7 to 3,1 GHz.

Transistor 3d

Abstract: PZB16040U
Contextual Info: ^ 3 3 - / / PZB16040U M AINTENANC E TYPE PHILIPS INTERNATIONAL 5t.E D 711DÖSb 004b500 470 • PHIN MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended fo r use in a common-base class-C narrowband power am plifier, operating at a frequency o f 1.64 GHz.

RZ2731B60W

Abstract: FO-57D
Contextual Info: _I l N AMER PHILIPS/DISCRETE □ bE D • _ ^53131 0Q15537 7 RZ2731B60W" T - 3 3 - 5 PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C broadband pulse power amplifier with a frequency range of 2,7 to 3,1 GHz.

Contextual Info: N AMER PHILIPS/DISCRETE 5SE D • bbSHiai 0011.231 ■ ^ 3 3 ~ \ Power Devices MICROWAVE TRANSISTORS TYPE NO. PACKAGE OUTLINE < G H z Vcc (V) U 1.2 - 1.4 1.2 -1 .4 1 .2 -1 .4 1.2 - 1.4 1 .2 -1 .4 1.2 - 1.4 1 .2 -1 .4 1.2 - 1.4 1 .2 -1 .4 1.2 - 1.4 42 50

RZ3135B40W

Abstract: T3A3
Contextual Info: N AMER PH IL IPS/DI SCRE TE ObE D bbSBTBl 001S2tj7 S RZ3135B40W J PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor intended fo r use In a common-base class-C broadband pulse power am plifier w ith a frequency range o f 3.1 to 3.5 GHz.

Contextual Info: - 3 3 H 3 RZ3135B50W PHILIPS INTERNATIONAL 5bE ]> • Tiio aat. 0 0 4 ^ 0 2 124 ■ p h in PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended fo r use in a common-base class-C broadband pulse power am plifier w ith a frequency range o f 3.1 to 3.5 GHz.

Contextual Info: r-33-// PZB16040U A M AINTENANC E TYPE PHILIPS INTERNATIONAL SLE D TllDÔBb 0D4b50G 47D « P H I N MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended fo r use in a common-base class-C narrowband power am plifier, operating at a frequency o f 1.64 GHz.