pj 57 diode
Abstract: DIODE PJ 57 BYW54 BYW55 BYW56 diode 725 PHILIPS BYW54 ScansUX67
Text: SLE D m 7 1 1 0û 2 b DQM07G1 725 H I P H I N PHILIPS I N T E R N A T I O N A L BYW54 to 56 SbE D r - C I - is r CONTROLLED AVALANCHE RECTIFIER DIODES Double-diffused glass passivated rectifier diodes in hermetically sealed axial-leaded glass envelopes, capable of absorbing reverse transients.
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DQM07G1
BYW54
BYW55
BYW56
7Z88032
711002t.
0DMQ70Ã
pj 57 diode
DIODE PJ 57
BYW56
diode 725
PHILIPS BYW54
ScansUX67
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RECTIFIER DIODES PHILIPS
Abstract: M1246 BYV30 BYV30-400U ultra fast recovery diodes BYV30-300
Text: BYV30 S E R IE S T - 0 3 - 1 7 1 P H IL IP S IN T E R N A T IO N A L SLE J> m 7 H D û 2 b Q D M IBM S SO I IP H IN ULTRA FAST R E C O V ER Y RECTIFIER D IO D ES Glass-passivated, high-efficiency epitaxial rectifier diodes in D O — 4 metal envelopes, featuring low forward
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BYV30
byv30â
T-03-17
M1246
RECTIFIER DIODES PHILIPS
M1246
BYV30-400U
ultra fast recovery diodes
BYV30-300
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors bb53T31 APX 0 0 3 2 4 CH bb? Product specification Hybrid integrated VHF/UHF w ideband amplifier OM2064 N AMER PHILIPS/DISCRETE PINNING DESCRIPTION A three-stage wideband amplifier in hybrid integrated circuit technology on a thin-film substrate, intended for
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bb53T31
OM2064
MEA191
DD32SD4
DD32SDS
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TIP3I
Abstract: No abstract text available
Text: TIP30; A TIP30B; C PHILIPS INTERNATIONAL SbE ] • 7110flEb 0 0 4 3 4 b 0 5TS ■ P H I N SILICON EPITAXIAL BASE POWER TRANSISTORS PNP silicon transistors in a plastic envelope intended for use in output stages of audio and television amplifier circuits where high peak powers can occur. NPN complements areTlP29 series.
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TIP30;
TIP30B;
7110flEb
areTlP29
TIP30
D0434bM
TIP3I
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BD132
Abstract: BD131 NPN POWER TRANSISTOR SOT-32 M 5229 IC GDM2770 GQM2771 IEC134 transistor af 126 d5224 transistor Bd132
Text: BD132 P HILIPS I N T E R N A T I O N A L SbE D • 711Dfl2b G D I42770 T*i7 M P H I N r-33-^r SILICON PLANAR EPITAXIAL POW ER TRANSISTOR P-N-P transistor in a SOT-32 plastic envelope for general purpose, medium power applications. N-P-N complement is BD131.
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BD132
711002b
GDM2770
OT-32
BD131.
O-126
OT-32)
BD131
NPN POWER TRANSISTOR SOT-32
M 5229 IC
GQM2771
IEC134
transistor af 126
d5224
transistor Bd132
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C18 ph zener
Abstract: philips zener diode c24 zener diode c51 ph philips zener diode c18 BZY93 BZY93 series diode zener ph c9v1 R3844 BZY93-C75R DIODE C18 ph
Text: BZY93 SERIES 7 01 - 1 7 - PHILIPS INTERNATIONAL SL.E D 711 □ fig b DQHltiflfl 3ST • P H I N REGULATOR DIODES Also available to BS9305—F051 A range o f diffused silicon diodes in DO-4 metal envelopes, intended fo r use as voltage regulator and transient suppressor diodes in power stabilization and transient suppression circuits.
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BZY93
711QaSb
BS9305-F051
BZY93-C7V5
BZY93-C75.
BZY93-C7V5R
BZY93-C75R.
T-OL-17
C18 ph zener
philips zener diode c24
zener diode c51 ph
philips zener diode c18
BZY93 series
diode zener ph c9v1
R3844
BZY93-C75R
DIODE C18 ph
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BD840
Abstract: FL110 B0844 BD844 BD839 B0840 BD841 BD842 BD843 IEC134
Text: _ PHILIPS BD840 BD842 BD844 II INTERNATIONAL SL.E D • 7110fl2b 0043D3Li 34T ■ P HI N T - 3 3 - ! SILICON PLANAR EPITAXIAL POWER TRANSISTORS P-N-P silicon transistors, in a plastic T 0 - 2 0 2 envelope, recom m ended fo r use in television circuits and
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BD840
BD842
BD844
D043D7b
T0-202
BD839,
BD841
BD843.
BD840
FL110
B0844
BD844
BD839
B0840
BD842
BD843
IEC134
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RGN2004
Abstract: rgn 1064 rgn 4004 RGN1054 DN904 s41 604 lf RGN354 TL 413 RGN1404 L416D
Text: Type A4 A A 4 AM H e rste lle r GleicheType C a stilla C a stilla RENS 1274 RENS 1284 RENS 1294 AF 2 AF 3 AF 7 RENS 1244 C astilla C o stilla C a stilla C a s tilla C a stilla C a stilla C a stilla C a stilla C a s tilla A 4 DD A 4 DP 1 C a stilla C a stilla
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10E1
Abstract: 20E1 MB2827 MB2827BB
Text: N A P C / P H I L I P S SEMICOND Philips Semiconductors Advanced BiCMOS Products bSE D • bbSB'JBH DDfibSTfl bT? « S IC 3 Product specification Dual 10-bit buffer/line driver; non-inverting 3-State FEATURES MR m u z m The MB2827 20-bit buffers provide high
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10-bit
MBZ827
64mA/-32mA
500mA
MB2827
20-bit
10E1
20E1
MB2827BB
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BC33B
Abstract: bC338 philips BC337A BC337 typical application BC337 BC327 BC327A BC328 BC337-16 BC338
Text: BC337 BC337A BC338 PHILIPS I NTERNATIONAL 5bE D 711 00 2 b OOMM fla 0T1 « P H I N • SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in plastic TO-92 envelopes, primarily intended for use in driver and output stages of audio amplifiers. The BC337, BC337A, BC338 are complementary to the BC327, BC327A and BC328 respectively.
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BC337
BC337A
BC338
711002b
BC337,
BC337A,
BC327,
BC327A
BC328
BC33B
bC338 philips
BC337 typical application
BC327
BC337-16
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