FHILIPS Search Results

pj 57 diode

Abstract: DIODE PJ 57 BYW54 BYW55 BYW56 diode 725 PHILIPS BYW54 ScansUX67
Contextual Info: SLE D m 7 1 1 0û 2 b DQM07G1 725 H I P H I N PHILIPS I N T E R N A T I O N A L BYW54 to 56 SbE D r - C I - is r CONTROLLED AVALANCHE RECTIFIER DIODES Double-diffused glass passivated rectifier diodes in hermetically sealed axial-leaded glass envelopes, capable of absorbing reverse transients.

RECTIFIER DIODES PHILIPS

Abstract: M1246 BYV30 BYV30-400U ultra fast recovery diodes BYV30-300
Contextual Info: BYV30 S E R IE S T - 0 3 - 1 7 1 P H IL IP S IN T E R N A T IO N A L SLE J> m 7 H D û 2 b Q D M IBM S SO I IP H IN ULTRA FAST R E C O V ER Y RECTIFIER D IO D ES Glass-passivated, high-efficiency epitaxial rectifier diodes in D O — 4 metal envelopes, featuring low forward

Contextual Info: Philips Semiconductors bb53T31 APX 0 0 3 2 4 CH bb? Product specification Hybrid integrated VHF/UHF w ideband amplifier OM2064 N AMER PHILIPS/DISCRETE PINNING DESCRIPTION A three-stage wideband amplifier in hybrid integrated circuit technology on a thin-film substrate, intended for

TIP3I

Contextual Info: TIP30; A TIP30B; C PHILIPS INTERNATIONAL SbE ] • 7110flEb 0 0 4 3 4 b 0 5TS ■ P H I N SILICON EPITAXIAL BASE POWER TRANSISTORS PNP silicon transistors in a plastic envelope intended for use in output stages of audio and television amplifier circuits where high peak powers can occur. NPN complements areTlP29 series.

BD132

Abstract: BD131 NPN POWER TRANSISTOR SOT-32 M 5229 IC GDM2770 GQM2771 IEC134 transistor af 126 d5224 transistor Bd132
Contextual Info: BD132 P HILIPS I N T E R N A T I O N A L SbE D • 711Dfl2b G D I42770 T*i7 M P H I N r-33-^r SILICON PLANAR EPITAXIAL POW ER TRANSISTOR P-N-P transistor in a SOT-32 plastic envelope for general purpose, medium power applications. N-P-N complement is BD131.

C18 ph zener

Abstract: philips zener diode c24 zener diode c51 ph philips zener diode c18 BZY93 BZY93 series diode zener ph c9v1 R3844 BZY93-C75R DIODE C18 ph
Contextual Info: BZY93 SERIES 7 01 - 1 7 - PHILIPS INTERNATIONAL SL.E D 711 □ fig b DQHltiflfl 3ST • P H I N REGULATOR DIODES Also available to BS9305—F051 A range o f diffused silicon diodes in DO-4 metal envelopes, intended fo r use as voltage regulator and transient suppressor diodes in power stabilization and transient suppression circuits.

BD840

Abstract: FL110 B0844 BD844 BD839 B0840 BD841 BD842 BD843 IEC134
Contextual Info: _ PHILIPS BD840 BD842 BD844 II INTERNATIONAL SL.E D • 7110fl2b 0043D3Li 34T ■ P HI N T - 3 3 - ! SILICON PLANAR EPITAXIAL POWER TRANSISTORS P-N-P silicon transistors, in a plastic T 0 - 2 0 2 envelope, recom m ended fo r use in television circuits and

RGN2004

Abstract: rgn 1064 rgn 4004 RGN1054 DN904 s41 604 lf RGN354 TL 413 RGN1404 L416D
Contextual Info: Type A4 A A 4 AM H e rste lle r GleicheType C a stilla C a stilla RENS 1274 RENS 1284 RENS 1294 AF 2 AF 3 AF 7 RENS 1244 C astilla C o stilla C a stilla C a s tilla C a stilla C a stilla C a stilla C a stilla C a s tilla A 4 DD A 4 DP 1 C a stilla C a stilla

10E1

Abstract: 20E1 MB2827 MB2827BB
Contextual Info: N A P C / P H I L I P S SEMICOND Philips Semiconductors Advanced BiCMOS Products bSE D • bbSB'JBH DDfibSTfl bT? « S IC 3 Product specification Dual 10-bit buffer/line driver; non-inverting 3-State FEATURES MR m u z m The MB2827 20-bit buffers provide high

BC33B

Abstract: bC338 philips BC337A BC337 typical application BC337 BC327 BC327A BC328 BC337-16 BC338
Contextual Info: BC337 BC337A BC338 PHILIPS I NTERNATIONAL 5bE D 711 00 2 b OOMM fla 0T1 « P H I N • SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in plastic TO-92 envelopes, primarily intended for use in driver and output stages of audio amplifiers. The BC337, BC337A, BC338 are complementary to the BC327, BC327A and BC328 respectively.