FET TRANSISTOR Search Results

FET TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini

FET TRANSISTOR Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
FET / Transistor Guide		NEC	Transistor Selection Guide		Original	PDF

FET TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Pch MOS FET Abstract: US6M2 TUMT6 Contextual Info: US6M2 Transistors 2.5V Drive Nch+Pch MOS FET US6M2 zStructure Silicon N-channel MOS FET / Silicon P-channel MOS FET zExternal dimensions Unit : mm TUMT6 2.0 0.85Max. (2) (1) (3) 1pin mark 0.2 1.7 zFeatures 1) Nch MOS FET and Pch MOS FET are put in TUMT6 package.	Original	85Max. 15Max. Pch MOS FET US6M2 TUMT6	PDF
QS6M4 Abstract: TSMT6 Pch MOS FET m04 fet Contextual Info: QS6M4 Transistors 2.5V Drive Nch+Pch MOS FET QS6M4 zExternal dimensions Unit : mm zStructure Silicon P-channel MOS FET Silicon N-channel MOS FET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) The QS6M4 combines Pch MOS FET with a Nch MOS FET in a single TSMT6 package.	Original		PDF
IL062 Abstract: IL062N TL062C IL062D il0621 Contextual Info: TECHNICAL DATA IL062 Low Power J-FET DUAL OPERATIONAL AMPLIFIERS The IL062 is high speed J-FET input dual operational amplifier. This J-FET input operational amplifier incorporates well matched, high voltage J-FET and bipolar transistors in a monolithic integrated circuit.	Original	IL062 IL062 012AA) IL062N TL062C IL062D il0621	PDF
il0621 Abstract: IL062 TL062C IL062N IL062D Contextual Info: TECHNICAL DATA IL062 Low Power J-FET DUAL OPERATIONAL AMPLIFIERS The IL062 is high speed J-FET input dual operational amplifier. This J-FET input operational amplifier incorporates well matched, high voltage J-FET and bipolar transistors in a monolithic integrated circuit.	Original	IL062 IL062 012AA) il0621 TL062C IL062N IL062D	PDF
Contextual Info: SOLID STATE DEVICES INC 3SE D •! Ö3bb011 0002317 0 * S S I N-FET 28.0 100 0.077 SFF140V N-FET 18.0 200 0.180 SFF240V N-FET 10.0 400 0.550 SFF340V N-FET 8.0 500 0.850 SFF440V N-FET 30.0 100 0.055 SFF150V N-FET 30.0 200 0.085 SFF250V N-FET 15.0 400 0.300	OCR Scan	3bb011 SFF140V SFF240V SFF340V SFF440V SFF150V SFF250V SFF350V SFF450V SFF9130V	PDF
TLO84 Abstract: TLO84C tl0b4c tl 0841 TL084MGC TL084M TL0848 TL064AC TL064BC TL064IDP Contextual Info: THOMSON SEMICONDUCTORS TL084 TL084A TL084B J-FET IN PU T Q U A D OP-AM Ps J-FET INPUT Q U A D OP-AM Ps The TL0B4, TL084A and TL084B are high speed J-FET input quad operational amplifiers incorporating well matched, high voltage J-FET and bipolar transistors	OCR Scan	TL084 TL084A TL084B TL084, TL084A TL084B ILLR54 LU84A CB-511 TLO84 TLO84C tl0b4c tl 0841 TL084MGC TL084M TL0848 TL064AC TL064BC TL064IDP	PDF
2sc5922 Abstract: 2SC5734 2SC5917 2SC5989 2SA2054 2sc5919 2SC5987 2SC5734K 2SC5918 2SC5982 Contextual Info: -Transistors ◆MOS FET Series ◆Low Vce sat Super-mini Transistors Series ◆Strong Discharge Voltage/ High Speed Switching Transistors Series ◆Muting Transistors Series MOS FET Series Power MOS FET Series Series Features Low RDs(on) High ESD capability	Original	200mW 500mW 15Min. 85Max. 15Max. 2sc5922 2SC5734 2SC5917 2SC5989 2SA2054 2sc5919 2SC5987 2SC5734K 2SC5918 2SC5982	PDF
093.216 Abstract: 2sk2974 093.941 transistor 2sk2974 Contextual Info: MITSUBISHI RF POWER MOS FET 2SK2974 SILICON MOS FET TYPE DESCRIPTION OUTLINE DRAWING Dimensions in mm 2SK2974 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications. INDEX MARK BOTTOM (TOP) FEATURES • High power gain:Gpe>8.4dB	OCR Scan	2SK2974 2SK2974 450MHz 30dBm 600mA 093.216 093.941 transistor 2sk2974	PDF
JAPAN transistor Abstract: 30v N channel MOS FET 2SK3019 ON503 Contextual Info: EM6K1 Transistor 2.5V Drive Nch+Nch MOS FET EM6K1 zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET EMT6 1.6 0.5 1.0 0.5 0.5 zFeatures 1) Two 2SK3019 transistors in a single EMT package. 2) The MOS FET elements are independent, eliminating	Original	2SK3019 100mA) JAPAN transistor 30v N channel MOS FET ON503	PDF
Contextual Info: EM6K1 Transistor 2.5V Drive Nch+Nch MOS FET EM6K1 zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET EMT6 1.6 0.5 1.0 0.5 0.5 zFeatures 1) Two 2SK3019 transistors in a single EMT package. 2) The MOS FET elements are independent, eliminating	Original	2SK3019 100mA)	PDF
Contextual Info: EM6K1 Transistor 2.5V Drive Nch+Nch MOS FET EM6K1 zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET EMT6 1.6 0.5 1.0 0.5 0.5 zFeatures 1) Two 2SK3019 transistors in a single EMT package. 2) The MOS FET elements are independent, eliminating	Original	2SK3019 100mA)	PDF
2SK2973 Abstract: 165082 mf 102 fet equivalent hd 9729 transistor t 2190 GR40-220 ic 7448 marking c7 sot-89 75458 88284 Contextual Info: MITSUBISHI RF POWER MOS FET 2SK2973 SILICON MOS FET TYPE DESCRIPTION 2SK2973 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications. FEATURES * High power gain:Gpe>13dB « VDD=9.6V,f=450MHz,Pin= 17dBm * High efficiency:55% typ.	OCR Scan	2SK2973 2SK2973 450MHz 17dBm OT-89 OT-89 Conditi38 165082 mf 102 fet equivalent hd 9729 transistor t 2190 GR40-220 ic 7448 marking c7 sot-89 75458 88284	PDF
HA17084 Abstract: ha17080 equivalent HA17082 DP-14 HA17080 HA17080A HA17082A HA17083 HA17083A HA17084A Contextual Info: HA17080 Series J-FET Input Operational Amplifiers Description Since J-FET input operational amplifiers are formed from a pair of J-FET transistors, they provide superlative characteristics, including a high input impedance and a low input bias current. Thus they can be	Original	HA17080 HA17080, HA17083 HA17084 ha17080 equivalent HA17082 DP-14 HA17080A HA17082A HA17083A HA17084A	PDF
ENN8366 Abstract: CPH5903 ITR01960 ITR01961 ITR01963 ITR01964 ITR01965 ITR01966 J 350 FET Contextual Info: CPH5903 Ordering number : ENN8366 TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Junction Silicon FET CPH5903 High-Frequency Amplifier. AM Amplifier Applications Features • • Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting	Original	CPH5903 ENN8366 CPH5903 2SK1740-equivalent 2SC2812-equivalent ENN8366 ITR01960 ITR01961 ITR01963 ITR01964 ITR01965 ITR01966 J 350 FET	PDF

pin diagram of ic tl082 Abstract: l0828 tl0828 L082 TL082 OF IC TL082 tl082 equivalent ic TL082AC TL082BC TL082C Contextual Info: UTC TL082 LINEAR INTEGRATED CIRCUIT GENERAL PURPOSE DUAL J-FET OPERATIONAL AMPLIFIER SOP-8 DESCRIPTION The UTC TL082 is a high speed J-FET input dual operational amplifier. It incorporates well matched, high voltage J-FET and bipolar transistors in a monolithic integrated circuit.	Original	TL082 TL082 Gain-of-10 100pF QW-R105-019 100KHZ pin diagram of ic tl082 l0828 tl0828 L082 OF IC TL082 tl082 equivalent ic TL082AC TL082BC TL082C	PDF
Contextual Info: QS6U24 Transistor 4V Drive Pch+SBD MOS FET QS6U24 Structure Silicon P-channel MOS FET Schottky Barrier DIODE External dimensions Unit : mm TSMT6 1.0MAX 2.9 1.9 0.95 0.95 Features 1) The QS6U24 combines Pch MOS FET with a Schottky barrier diode in a TSMT6 package.	Original	QS6U24 QS6U24	PDF
TL072 PIN DIAGRAM Abstract: tl072 equivalent tl072 cl 50W linear power amplifier tl072 TL072AC TL072BC TL072C Contek Microelectronics S-100W Contextual Info: TL072 LINEAR INTEGRATED CIRCUIT LOW NOISE DUAL J-FET OPERATIONAL AMPLIFIER DESCRIPTION The ContekTL072 is a high speed J- FET input dual operational amplifier. It incorporates well matched , high voltage J- FET and bipolar transistors in a monolithic integrated circuit. The device features high	Original	TL072 ContekTL072 TL072 PIN DIAGRAM tl072 equivalent tl072 cl 50W linear power amplifier tl072 TL072AC TL072BC TL072C Contek Microelectronics S-100W	PDF
TL062 Abstract: TL062AC TL062BC tl062 equivalent Contextual Info: UTC TL062 LINEAR INTEGRATED CIRCUIT LOW POWER DUAL J-FET OPERATIONAL AMPLIFIER DESCRIPTION The TL062 is a high speed J-FET input dual operational amplifier. It incorporates well matched, high voltage J-FET and bipolar transistors in a monolithic integrated circuit. The device features high	Original	TL062 TL062 QW-R105-003 TL062AC TL062BC tl062 equivalent	PDF
QS5U27 Abstract: IR 240 FET Contextual Info: QS5U27 Transistor 2.5V Drive Pch+SBD MOS FET QS5U27 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions Unit : mm TSMT5 1.0MAX 2.9 1.9 0.95 0.95 (5) (4) (2) (3) 0.7 1.6 2.8 zFeatures 1) The QS5U27 combines Pch MOS FET with a	Original	QS5U27 QS5U27 IR 240 FET	PDF
tlo71 Abstract: TL071IC TL071M TL071 TL071C TL071 PIN DIAGRAM transistor t18 FET TL071A TL071AC TL071B Contextual Info: THOMSON SEMICONDUCTORS TL071 TL071A TL071B LOW NOISE J-FET IN PUT SINGLE OP-AM Ps The TL071, TL071A and TL071B are high speed J-FET input operational ampli fiers incorporating well matched, high voltage J-FET and bipolar transistors in a monolithic integrated circuit.	OCR Scan	TL071 TL071A TL071B TL071B TL071 TL071A CB-11 tlo71 TL071IC TL071M TL071C TL071 PIN DIAGRAM transistor t18 FET TL071AC	PDF
QS6U24 Contextual Info: QS6U24 Transistor 4V Drive Pch+SBD MOS FET QS6U24 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions Unit : mm TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) The QS6U24 combines Pch MOS FET with a Schottky barrier diode in a TSMT6 package.	Original	QS6U24 QS6U24	PDF
Contextual Info: QS5U23 Transistor 2.5V Drive Pch+SBD MOS FET QS5U23 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions Unit : mm TSMT5 1.0MAX 2.9 1.9 0.95 0.95 (5) (4) (2) (3) 0.7 1.6 2.8 zFeatures 1) The QS5U23 combines Pch MOS FET with a	Original	QS5U23 QS5U23	PDF
rjp3053 Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009 Contextual Info: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5	Original	REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009	PDF
L082 Abstract: pin diagram of ic tl082 IC TL082 l0828 TL082 tl082 equivalent ic OF IC TL082 QW-R105-019 Contextual Info: UTC TL082 LINEAR INTEGRATED CIRCUIT GENERAL PURPOSE DUAL J-FET OPERATIONAL AMPLIFIER SOP-8 DESCRIPTION The UTC TL082 is a high speed J-FET input dual operational amplifier. It incorporates well matched, high voltage J-FET and bipolar transistors in a monolithic integrated circuit.	Original	TL082 TL082 QW-R105-019 L082 pin diagram of ic tl082 IC TL082 l0828 tl082 equivalent ic OF IC TL082	PDF

FET TRANSISTOR Search Results

FET TRANSISTOR Result Highlights (5)

FET TRANSISTOR Datasheets (1)

FET TRANSISTOR Datasheets Context Search

Pch MOS FET

QS6M4

IL062

il0621

TLO84

2sc5922

093.216

JAPAN transistor

2SK2973

HA17084

ENN8366

pin diagram of ic tl082

TL072 PIN DIAGRAM

TL062

QS5U27

tlo71

QS6U24

rjp3053

L082