FDP7N50 Search Results

FDP7N50

Abstract: FDPF7N50
Contextual Info: UniFET FDP7N50/FDPF7N50 TM 500V N-Channel MOSFET Features Description • 7A, 500V, RDS on = 0.9Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 12.8 nC)

FDP7N50U

Abstract: FDPF7N50U
Contextual Info: TM UniFET FDP7N50U/FDPF7N50U 500V N-Channel MOSFET Features Description • 5A, 500V, RDS on = 1.5Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Contextual Info: FDP7N50 N-Channel UniFETTM MOSFET 500 V, 7 A, 900 m Features Description • RDS on = 900 m (Max.) @ VGS = 10 V, ID = 3.5 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to

FDPF7N50F

Abstract: FDP7N50F
Contextual Info: UniFETTM FDP7N50F / FDPF7N50F tm N-Channel MOSFET, FRFET 500V, 6A, 1.15Ω Features Description • RDS on = 0.95Ω ( Typ.)@ VGS = 10V, ID = 3A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,

Contextual Info: UniFET TM FDP7N50/FDPF7N50 500V N-Channel MOSFET Features Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • 7A, 500V, RDS on = 0.9Ω @VGS = 10 V •

FDPF7N50U

Contextual Info: TM UniFET FDP7N50U/FDPF7N50U 500V N-Channel MOSFET Features Description • 5A, 500V, RDS on = 1.5Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Contextual Info: TM UniFET FDP7N50U/FDPF7N50U 500V N-Channel MOSFET Features Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • 5A, 500V, RDS on = 1.5 @VGS = 10 V

FDPF7N50U

Contextual Info: UniFET TM FDP7N50U/FDPF7N50U 500V N-Channel MOSFET Features Description • 5A, 500V, RDS on = 1.5Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Contextual Info: FDP7N50 N-Channel UniFETTM MOSFET 500 V, 7 A, 900 m Features Description • RDS on = 900 m (Max.) @ VGS = 10 V, ID = 3.5 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to

500V 100A thyristors

Abstract: 7A, 100v fast recovery diode fdpf7n50 N-CHANNEL ENHANCEMENT MODE POWER MOSFET 40v N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V p channel mosfet 100v FDP7N50
Contextual Info: UniFET FDP7N50/FDPF7N50 TM 500V N-Channel MOSFET Features Description • 7A, 500V, RDS on = 0.9Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 12.8 nC)

Contextual Info: UniFETTM FDP7N50F / FDPF7N50F tm N-Channel MOSFET, FRFET 500V, 6A, 1.15Ω Features Description • RDS on = 0.95Ω ( Typ.)@ VGS = 10V, ID = 3A • Low gate charge ( Typ. 15nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,

FDPF7N50U

Abstract: FDP7N50U
Contextual Info: TM UniFET FDP7N50U/FDPF7N50U 500V N-Channel MOSFET Features Description • 5A, 500V, RDS on = 1.5 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FDP7N50

Abstract: FDPF7N50
Contextual Info: UniFET FDP7N50/FDPF7N50 TM 500V N-Channel MOSFET Features Description • 7A, 500V, RDS on = 0.9Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 12.8 nC)

FDP7N50

Abstract: FDPF7N50
Contextual Info: UniFET TM FDP7N50/FDPF7N50 500V N-Channel MOSFET Features Description • 7A, 500V, RDS on = 0.9Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 12.8 nC)

220v AC voltage stabilizer schematic diagram

Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585

interleaved Boost PFC

Abstract: RG44 FDA18N50 FDPF5N50FT FDPF12N50FT fdpf16n50t FDA16N50 FDB12N50 FQA16N50 FDD6N50
Contextual Info: www.fairchildsemi.com AN-9066 UniFET — Optimized Switch for Discontinuous Current Mode Power Factor Correction Abstract This application note discusses merits of planar technology power MOSFET in discontinuous current mode power factor correction application. In most test conditions it is