FDPF7N50F
Abstract: FDP7N50F
Text: UniFETTM FDP7N50F / FDPF7N50F tm N-Channel MOSFET, FRFET 500V, 6A, 1.15Ω Features Description • RDS on = 0.95Ω ( Typ.)@ VGS = 10V, ID = 3A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,
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FDP7N50F
FDPF7N50F
FDPF7N50F
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Untitled
Abstract: No abstract text available
Text: UniFETTM FDP7N50F / FDPF7N50F tm N-Channel MOSFET, FRFET 500V, 6A, 1.15Ω Features Description • RDS on = 0.95Ω ( Typ.)@ VGS = 10V, ID = 3A • Low gate charge ( Typ. 15nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,
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Original
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FDP7N50F
FDPF7N50F
FDPF7N50F
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PDF
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