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    FDP5N50 Price and Stock

    onsemi FDP5N50

    MOSFET N-CH 500V 5A TO220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FDP5N50 Tube
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    Win Source Electronics FDP5N50 12,079
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    • 100 $0.8446
    • 1000 $0.5631
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    Rochester Electronics LLC FDP5N50

    MOSFET N-CH 500V 5A TO220-3
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    DigiKey FDP5N50 Tube 523
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    onsemi FDP5N50NZ

    MOSFET N-CH 500V 4.5A TO220-3
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    DigiKey FDP5N50NZ Tube 1,000
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    Fairchild Semiconductor Corporation FDP5N50

    5A, 500V, 1.4ohm, N-Channel Power MOSFET, TO-220AB '
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    Rochester Electronics FDP5N50 1,761 1
    • 1 $0.5525
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    • 1000 $0.4696
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    Fairchild Semiconductor Corporation FDP5N50NZ

    MOSFET N-CH 500V 4.5A TO220
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    Win Source Electronics FDP5N50NZ 17,345
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    • 100 $0.9365
    • 1000 $0.6244
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    FDP5N50 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDP5N50 Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 5A TO-220 Original PDF
    FDP5N50 Fairchild Semiconductor N-Channel MOSFET 500V, 5A, 1.4 Ohm Original PDF
    FDP5N50F Fairchild Semiconductor N-Channel MOSFET, FRFET 500V, 4.5A, 1.55 Ohm Original PDF
    FDP5N50NZ Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 4.5A TO220 Original PDF

    FDP5N50 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FDP5N50NZ / FDPF5N50NZ N-Channel UniFETTM II MOSFET 500 V, 4.5 A, 1.5 Ω Features Description • R DS on = 1.38 Ω (Typ.) @ VGS = 10 V, ID = 2.25 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS


    Original     		PDF FDP5N50NZ FDPF5N50NZ

    FDPF5n50u

    Abstract: diode 4A 400v ultra fast N-channel 500V mosfet
    Text: TM Ultra FRFET FDP5N50U / FDPF5N50UT tm N-Channel MOSFET, FRFET 500V, 4A, 2.0Ω Features Description • RDS on = 1.65Ω ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		PDF FDP5N50U FDPF5N50UT January2012 FDPF5N50UT FDPF5n50u diode 4A 400v ultra fast N-channel 500V mosfet

    Untitled

    Abstract: No abstract text available
    Text: UniFET-II TM FDP5N50NZU / FDPF5N50NZU N-Channel MOSFET 500V, 3.9A, 2.0Ω Features Description • RDS on = 1.7Ω ( Typ.)@ VGS = 10V, ID = 1.95A • Low Gate Charge ( Typ. 9nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		PDF FDP5N50NZU FDPF5N50NZU

    FDPF5N50NZF

    Abstract: No abstract text available
    Text: UniFET-IITM FDP5N50NZF / FDPF5N50NZF tm N-Channel MOSFET 500V, 4.2A, 1.75 Features Description • RDS on = 1.57 ( Typ.)@ VGS = 10V, ID = 2.1A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		PDF FDP5N50NZF FDPF5N50NZF FDPF5N50NZF

    FDPF5N50UT

    Abstract: fdp5n50u FDPF5n50u FDPF5N50
    Text: TM Ultra FRFET FDP5N50U / FDPF5N50UT tm N-Channel MOSFET, FRFET 500V, 4A, 2.0 Features Description • RDS on = 1.65 ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		PDF FDP5N50U FDPF5N50UT FDPF5N50UT FDPF5n50u FDPF5N50

    FDPF5N50T

    Abstract: MOSFET 500V 5A
    Text: UniFETTM FDP5N50 / FDPF5N50T tm N-Channel MOSFET 500V, 5A, 1.4Ω Features Description • RDS on = 1.15Ω ( Typ.)@ VGS = 10V, ID = 2.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FDP5N50 FDPF5N50T FDPF5N50T MOSFET 500V 5A

    mosfet 500V 5A

    Abstract: FDPF5N50 FDP5N50
    Text: UniFETTM FDP5N50 / FDPF5N50 tm N-Channel MOSFET 500V, 5A, 1.4Ω Features Description • RDS on = 1.15Ω ( Typ.)@ VGS = 10V, ID = 2.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FDP5N50 FDPF5N50 FDPF5N50 mosfet 500V 5A

    Untitled

    Abstract: No abstract text available
    Text: TM UniFET-II FDP5N50NZ / FDPF5N50NZ tm N-Channel MOSFET 500V, 4.5A, 1.5 Features Description • RDS on = 1.38 (Typ.)@ VGS = 10V, ID = 2.25A • Low Gate Charge (Typ. 9nC) These N-Channel enhancement mode power field effect transis tors are produced using Fairchild’s proprietary, planar stripe,


    Original     		PDF FDP5N50NZ FDPF5N50NZ

    Untitled

    Abstract: No abstract text available
    Text: UniFETTM FDP5N50 / FDPF5N50T tm N-Channel MOSFET 500V, 5A, 1.4Ω Features Description • RDS on = 1.15Ω ( Typ.)@ VGS = 10V, ID = 2.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FDP5N50 FDPF5N50T FDPF5N50 FDPF5N50T

    FDPF5N50NZU

    Abstract: fdp5n50nzu
    Text: UniFET-IITM FDP5N50NZU / FDPF5N50NZU tm N-Channel MOSFET 500V, 3.9A, 2.0 Features Description • RDS on = 1.7 ( Typ.)@ VGS = 10V, ID = 1.95A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		PDF FDP5N50NZU FDPF5N50NZU FDPF5N50NZU

    fdp5n50nz

    Abstract: No abstract text available
    Text: FDP5N50NZ / FDPF5N50NZ N-Channel UniFETTM II MOSFET 500 V, 4.5 A, 1.5 Ω Features • R Description DS on = 1.38 Ω (Typ.) @ VGS = 10 V, ID = 2.25 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and DMOS


    Original     		PDF FDP5N50NZ FDPF5N50NZ FDPF5N50NZ

    FDPF5N50NZF

    Abstract: No abstract text available
    Text: UniFET-II TM FDP5N50NZF / FDPF5N50NZF N-Channel MOSFET 500V, 4.2A, 1.75Ω Features Description • RDS on = 1.57Ω ( Typ.)@ VGS = 10V, ID = 2.1A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		PDF FDP5N50NZF FDPF5N50NZF FDPF5N50NZF

    Untitled

    Abstract: No abstract text available
    Text: UniFETTM FDP5N50 / FDPF5N50T tm N-Channel MOSFET 500V, 5A, 1.4Ω Features Description • RDS on = 1.15Ω ( Typ.)@ VGS = 10V, ID = 2.5A • Low gate charge ( Typ. 11nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		PDF FDP5N50 FDPF5N50T

    FDPF5n50u

    Abstract: No abstract text available
    Text: TM Ultra FRFET FDP5N50U / FDPF5N50UT tm N-Channel MOSFET, FRFET 500V, 4A, 2.0Ω Features Description • RDS on = 1.65Ω ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		PDF FDP5N50U FDPF5N50UT FDPF5n50u

    FDPF5N50FT

    Abstract: FDP5N50F
    Text: UniFETTM FDP5N50F / FDPF5N50FT tm N-Channel MOSFET, FRFET 500V, 4.5A, 1.55Ω Features Description • RDS on = 1.25Ω ( Typ.)@ VGS = 10V, ID = 2.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		PDF FDP5N50F FDPF5N50FT FDPF5N50FT

    FDPF5N50NZ

    Abstract: FDPF5N50NZU FDP5N50NZU
    Text: UniFET-II TM FDP5N50NZU / FDPF5N50NZU N-Channel MOSFET 500V, 3.9A, 2.0Ω Features Description • RDS on = 1.7Ω ( Typ.)@ VGS = 10V, ID = 1.95A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		PDF FDP5N50NZU FDPF5N50NZU FDPF5N50NZU FDPF5N50NZ

    Untitled

    Abstract: No abstract text available
    Text: UniFET TM FDP5N50F / FDPF5N50FT tm N-Channel MOSFET, FRFET 500V, 4.5A, 1.55Ω Features Description • RDS on = 1.25Ω ( Typ.)@ VGS = 10V, ID = 2.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		PDF FDP5N50F FDPF5N50FT

    Untitled

    Abstract: No abstract text available
    Text: UniFET-II TM FDP5N50NZF / FDPF5N50NZF N-Channel MOSFET 500V, 4.2A, 1.75Ω Features Description • RDS on = 1.57Ω ( Typ.)@ VGS = 10V, ID = 2.1A • Low Gate Charge ( Typ. 9nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		PDF FDP5N50NZF FDPF5N50NZF

    FDPF5N50FT

    Abstract: No abstract text available
    Text: UniFET TM FDP5N50F / FDPF5N50FT tm N-Channel MOSFET, FRFET 500V, 4.5A, 1.55Ω Features Description • RDS on = 1.25Ω ( Typ.)@ VGS = 10V, ID = 2.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		PDF FDP5N50F FDPF5N50FT FDPF5N50FT

    FDPF5N50UT

    Abstract: FDPF5n50u FDP5N50U
    Text: TM Ultra FRFET FDP5N50U / FDPF5N50UT tm N-Channel MOSFET, FRFET 500V, 4A, 2.0Ω Features Description • RDS on = 1.65Ω ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		PDF FDP5N50U FDPF5N50UT May2012 FDPF5N50UT FDPF5n50u

    FDP5N50NZ

    Abstract: FDPF5N50NZ mosfet 500V 45A FDPF5N50NZT
    Text: TM UniFET-II FDP5N50NZ / FDPF5N50NZ tm N-Channel MOSFET 500V, 4.5A, 1.5 Features Description • RDS on = 1.38 (Typ.)@ VGS = 10V, ID = 2.25A These N-Channel enhancement mode power field effect transis tors are produced using Fairchild’s proprietary, planar stripe,


    Original     		PDF FDP5N50NZ FDPF5N50NZ FDPF5N50NZ mosfet 500V 45A FDPF5N50NZT

    FDPF5N50FT

    Abstract: 500V 25A Mosfet MOSFET 400V TO-220 n mosfet low vgs FDP5N50F MARKING "GD" DIODE FDPF
    Text: Advance UniFET TM FDP5N50F / FDPF5N50FT 500V N-Channel MOSFET, FRFET Features Description • 4.5A, 500V, RDS on = 1.55Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FDP5N50F FDPF5N50FT FDPF5N50FT 500V 25A Mosfet MOSFET 400V TO-220 n mosfet low vgs MARKING "GD" DIODE FDPF

    FDP5N50F

    Abstract: FDPF5N50FT
    Text: UniFETTM FDP5N50F / FDPF5N50FT tm N-Channel MOSFET, FRFET 500V, 4.5A, 1.55Ω Features Description • RDS on = 1.25Ω ( Typ.)@ VGS = 10V, ID = 2.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		PDF FDP5N50F FDPF5N50FT FDPF5N50FT

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS