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    FDPF5N50 Price and Stock

    onsemi FDPF5N50NZ

    MOSFET N-CH 500V 4.5A TO220F
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    DigiKey FDPF5N50NZ Tube 1,000
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    Rochester Electronics FDPF5N50NZ 412,979 1
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    Flip Electronics FDPF5N50NZ 62
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    Rochester Electronics LLC FDPF5N50NZ

    POWER FIELD-EFFECT TRANSISTOR, 4
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    Rochester Electronics LLC FDPF5N50FT

    POWER FIELD-EFFECT TRANSISTOR, 4
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    Flip Electronics FDPF5N50FT

    N-CHANNEL 500 V 4.5A (TC) 28W (T
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    DigiKey FDPF5N50FT Tube 1,000
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    onsemi FDPF5N50FT

    MOSFET N-CH 500V 4.5A TO220F
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    Avnet Americas FDPF5N50FT Tube 0 Weeks, 2 Days 926
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    Rochester Electronics FDPF5N50FT 1,000 1
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    Flip Electronics FDPF5N50FT 4,000
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    FDPF5N50 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDPF5N50 Fairchild Semiconductor N-Channel MOSFET 500V, 5A, 1.4 Ohm Original PDF
    FDPF5N50FT Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 4.5A TO-220F Original PDF
    FDPF5N50FT Fairchild Semiconductor N-Channel MOSFET, FRFET 500V, 4.5A, 1.55 Ohm Original PDF
    FDPF5N50NZ Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 4.5A TO220F Original PDF
    FDPF5N50NZF Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 4.2A TO-220F Original PDF
    FDPF5N50NZU Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 3.9A TO-220F Original PDF
    FDPF5N50T Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 5A TO-220F Original PDF
    FDPF5N50T Fairchild Semiconductor 500V N-Channel MOSFET; Package: TO-220F; No of Pins: 3; Container: Rail Original PDF
    FDPF5N50TYDTU Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V TO-220FP-3 Original PDF
    FDPF5N50UT Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V TO-220F-3 Original PDF

    FDPF5N50 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FDP5N50NZ / FDPF5N50NZ N-Channel UniFETTM II MOSFET 500 V, 4.5 A, 1.5 Ω Features Description • R DS on = 1.38 Ω (Typ.) @ VGS = 10 V, ID = 2.25 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS


    Original     		PDF FDP5N50NZ FDPF5N50NZ

    Untitled

    Abstract: No abstract text available
    Text: FDPF5N50T N-Channel UniFETTM MOSFET 500 V, 5 A, 1.4 Ω Features Description • RDS on = 1.15 Ω (Typ.) @ VGS = 10 V, ID = 2.5 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		PDF FDPF5N50T

    FDPF5n50u

    Abstract: diode 4A 400v ultra fast N-channel 500V mosfet
    Text: TM Ultra FRFET FDP5N50U / FDPF5N50UT tm N-Channel MOSFET, FRFET 500V, 4A, 2.0Ω Features Description • RDS on = 1.65Ω ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		PDF FDP5N50U FDPF5N50UT January2012 FDPF5N50UT FDPF5n50u diode 4A 400v ultra fast N-channel 500V mosfet

    Untitled

    Abstract: No abstract text available
    Text: UniFET-II TM FDP5N50NZU / FDPF5N50NZU N-Channel MOSFET 500V, 3.9A, 2.0Ω Features Description • RDS on = 1.7Ω ( Typ.)@ VGS = 10V, ID = 1.95A • Low Gate Charge ( Typ. 9nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		PDF FDP5N50NZU FDPF5N50NZU

    FDPF5N50NZF

    Abstract: No abstract text available
    Text: UniFET-IITM FDP5N50NZF / FDPF5N50NZF tm N-Channel MOSFET 500V, 4.2A, 1.75 Features Description • RDS on = 1.57 ( Typ.)@ VGS = 10V, ID = 2.1A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		PDF FDP5N50NZF FDPF5N50NZF FDPF5N50NZF

    FDPF5N50UT

    Abstract: fdp5n50u FDPF5n50u FDPF5N50
    Text: TM Ultra FRFET FDP5N50U / FDPF5N50UT tm N-Channel MOSFET, FRFET 500V, 4A, 2.0 Features Description • RDS on = 1.65 ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		PDF FDP5N50U FDPF5N50UT FDPF5N50UT FDPF5n50u FDPF5N50

    Untitled

    Abstract: No abstract text available
    Text: FDPF5N50NZF N-Channel UniFETTM II FRFET MOSFET 500 V, 4.2 A, 1.75  Features Description • RDS on = 1.57  (Typ.) @ VGS = 10 V, ID = 2.1 A UniFETTM II MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on advanced planar stripe and


    Original     		PDF FDPF5N50NZF FDPF5N50NZF

    Untitled

    Abstract: No abstract text available
    Text: FDPF5N50NZF N-Channel UniFETTM II FRFET MOSFET 500 V, 4.2 A, 1.75  Features Description • RDS on = 1.57  (Typ.) @ VGS = 10 V, ID = 2.1 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS


    Original     		PDF FDPF5N50NZF 100nsec

    FDPF5N50T

    Abstract: MOSFET 500V 5A
    Text: UniFETTM FDP5N50 / FDPF5N50T tm N-Channel MOSFET 500V, 5A, 1.4Ω Features Description • RDS on = 1.15Ω ( Typ.)@ VGS = 10V, ID = 2.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FDP5N50 FDPF5N50T FDPF5N50T MOSFET 500V 5A

    FDPF5n50u

    Abstract: No abstract text available
    Text: FDPF5N50UT N-Channel UniFETTM Ultra FRFETTM MOSFET 500 V, 4 A, 2 Ω Features Description • RDS on = 1.65 Ω (Typ.) @ VGS = 10 V, ID = 2 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology.


    Original     		PDF FDPF5N50UT 50nsec 200nsec FDPF5n50u

    mosfet 500V 5A

    Abstract: FDPF5N50 FDP5N50
    Text: UniFETTM FDP5N50 / FDPF5N50 tm N-Channel MOSFET 500V, 5A, 1.4Ω Features Description • RDS on = 1.15Ω ( Typ.)@ VGS = 10V, ID = 2.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FDP5N50 FDPF5N50 FDPF5N50 mosfet 500V 5A

    Untitled

    Abstract: No abstract text available
    Text: TM UniFET-II FDP5N50NZ / FDPF5N50NZ tm N-Channel MOSFET 500V, 4.5A, 1.5 Features Description • RDS on = 1.38 (Typ.)@ VGS = 10V, ID = 2.25A • Low Gate Charge (Typ. 9nC) These N-Channel enhancement mode power field effect transis tors are produced using Fairchild’s proprietary, planar stripe,


    Original     		PDF FDP5N50NZ FDPF5N50NZ

    Untitled

    Abstract: No abstract text available
    Text: FDPF5N50FT N-Channel UniFETTM FRFET MOSFET 500 V, 4.5 A, 1.55 Ω Features Description • RDS on = 1.25 Ω (Typ.) @ VGS = 10 V, ID = 2.25 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology.


    Original     		PDF FDPF5N50FT 100nsec 200nsec

    Untitled

    Abstract: No abstract text available
    Text: UniFETTM FDP5N50 / FDPF5N50T tm N-Channel MOSFET 500V, 5A, 1.4Ω Features Description • RDS on = 1.15Ω ( Typ.)@ VGS = 10V, ID = 2.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FDP5N50 FDPF5N50T FDPF5N50 FDPF5N50T

    Untitled

    Abstract: No abstract text available
    Text: FDPF5N50T N-Channel UniFETTM MOSFET 500 V, 5 A, 1.4  Features Description • RDS on = 1.15  (Typ.) @ VGS = 10 V, ID = 2.5 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		PDF FDPF5N50T

    fdp5n50nz

    Abstract: No abstract text available
    Text: FDP5N50NZ / FDPF5N50NZ N-Channel UniFETTM II MOSFET 500 V, 4.5 A, 1.5 Ω Features • R Description DS on = 1.38 Ω (Typ.) @ VGS = 10 V, ID = 2.25 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and DMOS


    Original     		PDF FDP5N50NZ FDPF5N50NZ FDPF5N50NZ

    FDPF5N50NZF

    Abstract: No abstract text available
    Text: UniFET-II TM FDP5N50NZF / FDPF5N50NZF N-Channel MOSFET 500V, 4.2A, 1.75Ω Features Description • RDS on = 1.57Ω ( Typ.)@ VGS = 10V, ID = 2.1A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		PDF FDP5N50NZF FDPF5N50NZF FDPF5N50NZF

    Untitled

    Abstract: No abstract text available
    Text: UniFETTM FDP5N50 / FDPF5N50T tm N-Channel MOSFET 500V, 5A, 1.4Ω Features Description • RDS on = 1.15Ω ( Typ.)@ VGS = 10V, ID = 2.5A • Low gate charge ( Typ. 11nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		PDF FDP5N50 FDPF5N50T

    FDPF5n50u

    Abstract: No abstract text available
    Text: TM Ultra FRFET FDP5N50U / FDPF5N50UT tm N-Channel MOSFET, FRFET 500V, 4A, 2.0Ω Features Description • RDS on = 1.65Ω ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		PDF FDP5N50U FDPF5N50UT FDPF5n50u

    FDPF5N50FT

    Abstract: No abstract text available
    Text: UniFETTM FDP5N50F / FDPF5N50FT tm N-Channel MOSFET, FRFET 500V, 4.5A, 1.55Ω Features Description • RDS on = 1.25Ω ( Typ.)@ VGS = 10V, ID = 2.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		PDF FDP5N50F FDPF5N50FT FDPF5N50FT

    FDPF5N50FT

    Abstract: FDP5N50F
    Text: UniFETTM FDP5N50F / FDPF5N50FT tm N-Channel MOSFET, FRFET 500V, 4.5A, 1.55Ω Features Description • RDS on = 1.25Ω ( Typ.)@ VGS = 10V, ID = 2.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		PDF FDP5N50F FDPF5N50FT FDPF5N50FT

    Untitled

    Abstract: No abstract text available
    Text: FDPF5N50NZU N-Channel UniFETTM II Ultra FRFETTM MOSFET 500 V, 3.9 A, 2.0  Features Description • RDS on = 1.7  (Typ.) @ VGS = 10 V, ID = 1.95 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS


    Original     		PDF FDPF5N50NZU 50nsec

    FDPF5n50u

    Abstract: diode 4A 400v ultra fast
    Text: FDPF5N50UT N-Channel UniFETTM Ultra FRFETTM MOSFET 500 V, 4 A, 2.0  Features Description • RDS on = 1.65  (Typ.) @ VGS = 10 V, ID = 2 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology.


    Original     		PDF FDPF5N50UT FDPF5N50UT 50nsec 200nsec FDPF5n50u diode 4A 400v ultra fast

    Untitled

    Abstract: No abstract text available
    Text: FDPF5N50NZU N-Channel UniFETTM II Ultra FRFETTM MOSFET 500 V, 3.9 A, 2.0  Features Description • RDS on = 1.7  (Typ.) @ VGS = 10 V, ID = 1.95 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and


    Original     		PDF FDPF5N50NZU FDPF5N50NZU