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    FDPF5n50u

    Abstract: diode 4A 400v ultra fast N-channel 500V mosfet
    Text: TM Ultra FRFET FDP5N50U / FDPF5N50UT tm N-Channel MOSFET, FRFET 500V, 4A, 2.0Ω Features Description • RDS on = 1.65Ω ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		PDF FDP5N50U FDPF5N50UT January2012 FDPF5N50UT FDPF5n50u diode 4A 400v ultra fast N-channel 500V mosfet

    FDPF5N50UT

    Abstract: fdp5n50u FDPF5n50u FDPF5N50
    Text: TM Ultra FRFET FDP5N50U / FDPF5N50UT tm N-Channel MOSFET, FRFET 500V, 4A, 2.0 Features Description • RDS on = 1.65 ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		PDF FDP5N50U FDPF5N50UT FDPF5N50UT FDPF5n50u FDPF5N50

    FDPF5n50u

    Abstract: No abstract text available
    Text: TM Ultra FRFET FDP5N50U / FDPF5N50UT tm N-Channel MOSFET, FRFET 500V, 4A, 2.0Ω Features Description • RDS on = 1.65Ω ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		PDF FDP5N50U FDPF5N50UT FDPF5n50u

    FDPF5N50UT

    Abstract: FDPF5n50u FDP5N50U
    Text: TM Ultra FRFET FDP5N50U / FDPF5N50UT tm N-Channel MOSFET, FRFET 500V, 4A, 2.0Ω Features Description • RDS on = 1.65Ω ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		PDF FDP5N50U FDPF5N50UT May2012 FDPF5N50UT FDPF5n50u