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onsemi FDP036N10A MOSFETs PT5 NCH 100V 3.6Mohm PowerTrench MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	FDP036N10A		438			1 $6.24 10 $6.24 100 $3.04 1000 $2.5 10000 $2.5	Buy Now
Verical ()	FDP036N10A		800		800	1 - 10 - 100 - 1000 $4.4724 10000 $4.4724	Buy Now
	FDP036N10A		125		3	1 - 10 $3.718 100 $3.718 1000 $3.718 10000 $3.718	Buy Now
	FDP036N10A		50		12	1 - 10 - 100 $3.55 1000 $3.55 10000 $3.55	Buy Now

FDP036N10A Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
FDP036N10A		Fairchild Semiconductor	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V TO-220AB-3		Original	PDF

FDP036N10A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
FDP036N10A Abstract: fdp036n10 FDP036N0A 47w marking fdp036 Contextual Info: FDP036N10A N-Channel PowerTrench MOSFET 100V, 176A, 3.6mW Features Description • RDS on = 3.2mW ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet	Original	FDP036N10A O-220AB FDP036N10A fdp036n10 FDP036N0A 47w marking fdp036	PDF
fdp036n10a Contextual Info: FDP036N10A N-Channel PowerTrench MOSFET 100 V, 214 A, 3.6 mΩ Features Description • RDS on = 3.2 mΩ ( Typ.)@ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching	Original	FDP036N10A FDP036N10A	PDF
FDP036N0A Abstract: FDP036N10A Contextual Info: FDP036N10A N-Channel tm PowerTrench MOSFET 100V, 176A, 3.6mΩ Features Description • RDS on = 3.2mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet	Original	FDP036N10A O-220AB FDP036N0A FDP036N10A	PDF
Contextual Info: FDP036N10A N-Channel tm PowerTrench MOSFET 100V, 214A, 3.6mΩ Features Description • RDS on = 3.2mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet	Original	FDP036N10A FDP036N10A O-220AB	PDF
Contextual Info: FDP036N10A N-Channel tm PowerTrench MOSFET 100V, 214A, 3.6mΩ Features Description • RDS on = 3.2mΩ ( Typ.)@ VGS = 10V, ID = 75A • Fast Switching Speed • Low Gate Charge This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet	Original	FDP036N10A O-220AB	PDF
Contextual Info: FDP036N10A N-Channel PowerTrench MOSFET 100 V, 214 A, 3.6 mΩ Features Description • RDS on = 3.2 mΩ ( Typ.) @ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior	Original	FDP036N10A	PDF